A study of Inx Ga1-x N growth by reflection high-energy electron diffraction

Epitaxial growth of Inx Ga1-x N alloys on GaN (0001) by plasma-assisted molecular-beam epitaxy is investigated using the in situ reflection high-energy electron-diffraction (RHEED) technique. Based on RHEED pattern changes over time, the transition of growth mode from two-dimensional (2D) nucleation to three-dimensional islanding is studied for various indium compositions. RHEED specular-beam intensity oscillations are recorded during the 2D wetting-layer growth, and the dependences of the oscillation period/frequency on the substrate temperature and source flux are established. By measuring the spacing between diffraction spots in RHEED, we also estimated indium composition, x, in alloys grown under different flux combinations. Incorporation coefficients of both gallium and indium are derived. Possible surface segregation of indium atoms is finally examined. © 2005 American Institute of Physics.published_or_final_versio

Coherent and dislocated three-dimensional islands of Inx Ga1-x N self-assembled on GaN(0001) during molecular-beam epitaxy

Molecular-beam epitaxy of Inx Ga1-x N alloy on GaN(0001) is investigated by scanning tunneling microscopy. The Stranski-Krastanov mode of growth of the alloy is followed, where the newly nucleated three-dimensional islands are initially coherent to the underlying GaN and the wetting layer, but then become dislocated when grown bigger than about 20 nm in the lateral dimension. Two types of islands show different shapes, where the coherent ones are cone shaped and the dislocated ones are pillar like, having flat-tops. Within a certain range of material coverage, the surface contains both coherent and dislocated islands, showing an overall bimodal island-size distribution. The continued deposition on such surfaces leads to the pronounced growth of dislocated islands, whereas the sizes of the coherent islands change very little. © 2005 The American Physical Society.published_or_final_versio

Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy

The plasma-assisted molecular-beam epitaxy technique was used to study the epitaxial growth of InN on GaN. A relationship between film growth mode and the deposition condition was established by combining reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The sustained RHEED intensity oscillations were recorded for 2D growth while 2D nucleation islands were revealed by STM. Results showed less than three oscillation periods for 3 D growth, indicating the Strnski-Krastanov (SK) growth mode of the film.published_or_final_versio

InN Island shape and its dependence on growth condition of molecular-beam epitaxy

The three-dimensional (3D) island shapes of the InN and its dependence on growth conditions of molecular-beam epitaxy (MBE) were analyzed. The islands were dislocated and the strain in an island depended on its size. The pillar-shaped islands with low aspect ratios represented the equilibrium shape, and the pyrimidal islands with higher aspect ratios were limited by kinetics during MBE growth. The decreasing trend of island aspect ratio with respect to island size was attributed to gradual relaxation of residual strain in dislocated islands.published_or_final_versio

An analysis of the Lowest Total Fertility Rate in Hong Kong SAR

Total Fertility Rate (TFR) in Hong Kong has dropped significantly over the past 30 years, from 2.48 births per woman in 1976 to 0.966 in 2005, which is one of the lowest in the world. It is mainly caused by the change of marital distribution which has contributed to about 56% of the decline in the total fertility rate for the period 1976-2001. Delay of marriage and reduction in the marital fertility rate have also been shown to be two major causes for the low TFR. A new measure, called a weighted total marital fertility rate (WTMFR), is introduced such that change of age at marriage and the fertility within marriage can be factored in explaining the decline of the fertility rate. The delay of marriage has contributed to about 52% of the reduction of WTMFR whereas the reduction of the fertility within marriage has accounted for the other 48%. Apparently, the proportion of women remaining single has been stabilized and leveled off recently. However, the preference of having smaller family size has become a norm rather than an exception. It is very unlikely to see a rebound of fertility among the Hong Kong women in the near future if there is no increase in marriages or births outside wedlock. Encouraging more births among married women so as to increase fertility is expected to have limited impact.Age at first marriage, decomposition, Hong Kong, Total fertility rate, Weighted total marital fertility rate

Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy

The scaling property of three-dimensional InN islands nucleated on GaN(0001) surface during molecular-beam epitaxy (MBE) is investigated. Due to the large lattice mismatch between InN and GaN (∼10%), the islands formed from the Stranski-Krastanow growth mode are dislocated. Despite the variations in (residual) strain and the shape, both the island size and pair separation distributions show the scaling behavior. Further, the size distribution resembles that for submonolayer homoepitaxy with the critical island size i = 1, suggesting that detachment of atoms is not significant. The above results also indicate strain is insignificant in determining the nucleation and growth of dislocated islands during heteroepitaxy by MBE.published_or_final_versio

In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy

Indium nitride (InN) exists in two different structural phases, the equilibrium wurtzite (w) and the metastable zinc-blende (zb) phases. It is of scientific interest and practical relevance to examine the crystal structure of the epifilms during growth. In this paper, we use Patterson function inversion of low-energy electron diffraction I-V curves to reveal the preferential formation of zinc-blende InN wetting layer during the Stranski-Krastanov growth on GaN(0001). For three-dimensional islands nucleated afterwards on top of the wetting layer and for thick InN films, the equilibrium wurtzite structure is observed instead. This in situ revelation of the InN lattice structure is confirmed by ex situ transmission electron microscopy studies. Finally, the formation of zb-InN layer on w-GaN is explained in terms of the strain in the system. © 2005 The American Physical Society.published_or_final_versio

A practical and open source implementation of IEC 61850-7-2 for IED monitoring applications

A new open source mapping of IEC 61850-7-2 to web services has been defined and implemented. This work is useful for rapidly implementing user interfaces—particularly web-based interfaces—for monitoring and controlling Intelligent Electronic Devices (IEDs) from multiple vendors. The web service mapping has been implemented using the Hypertext Transfer Protocol (HTTP), with a message format in JavaScript Object Notation (JSON). This approach requires a simple and ubiquitous software stack for its implementation, which is a significant advantage over existing client-server communications mappings. The use of an open source paradigm allows for the rapid iteration and refinement of the design, implementation, and testing of the internal details of the proposed protocol stack, in a collaborative manner. These developments are of immediate interest to users of IEC 61850 and are particularly relevant to the IEC 61850 standardization process

Comparing Monofractal and Multifractal Analysis of Corrosion Damage Evolution in Reinforcing Bars

Based on fractal theory and damage mechanics, the aim of this paper is to describe the monofractal and multifractal characteristics of corrosion morphology and develop a new approach to characterize the nonuniform corrosion degree of reinforcing bars. The relationship between fractal parameters and tensile strength of reinforcing bars are discussed. The results showed that corrosion mass loss ratio of a bar cannot accurately reflect the damage degree of the bar. The corrosion morphology of reinforcing bars exhibits both monofractal and multifractal features. The fractal dimension and the tensile strength of corroded steel bars exhibit a power function relationship, while the width of multifractal spectrum and tensile strength of corroded steel bars exhibit a linear relationship. By comparison, using width of multifractal spectrum as multifractal damage variable not only reflects the distribution of corrosion damage in reinforcing bars, but also reveals the influence of nonuniform corrosion on the mechanical properties of reinforcing bars. The present research provides a new approach for the establishment of corrosion damage constitutive models of reinforcing bars