Characterization of soluble microbial products as precursors of disinfection byproducts in drinking water supply

Water pollution by wastewater discharge can cause the problem of disinfection byproducts (DBPs) in drinking water supply. In this study, DBP formation characteristics of soluble microbial products (SMPs) as the main products of wastewater organic biodegradation were investigated. The results show that SMPs can act as DBP precursors in simulated wastewater biodegradation process. Under the experimental conditions, stabilized SMPs had DBPFP (DBP formation potential) yield of around 5.6 mumol mmol(-1)-DOC (dissolved organic carbon) and DBP speciation profile different from that of the conventional precursor, natural organic matter (NOM). SMPs contained polysaccharides, proteins, and humic-like substances, and the latter two groups can act as reactive DBP precursors. SMP fraction with molecular weight of <1 kDa accounted for 85% of the organic carbon and 65% of the DBP formation. As small SMP molecules are more difficult to remove by conventional water treatment processes, more efforts are needed to control wastewater-derived DBP problem in water resource management.postprin

Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy

The plasma-assisted molecular-beam epitaxy technique was used to study the epitaxial growth of InN on GaN. A relationship between film growth mode and the deposition condition was established by combining reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The sustained RHEED intensity oscillations were recorded for 2D growth while 2D nucleation islands were revealed by STM. Results showed less than three oscillation periods for 3 D growth, indicating the Strnski-Krastanov (SK) growth mode of the film.published_or_final_versio

InN Island shape and its dependence on growth condition of molecular-beam epitaxy

The three-dimensional (3D) island shapes of the InN and its dependence on growth conditions of molecular-beam epitaxy (MBE) were analyzed. The islands were dislocated and the strain in an island depended on its size. The pillar-shaped islands with low aspect ratios represented the equilibrium shape, and the pyrimidal islands with higher aspect ratios were limited by kinetics during MBE growth. The decreasing trend of island aspect ratio with respect to island size was attributed to gradual relaxation of residual strain in dislocated islands.published_or_final_versio

Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy

Step bunching of vicinal GaN(0001) surface during epitaxial growth is observed by scanning tunneling microscopy. Large step stiffness and repulsive step-step interaction are suggested based on step morphology observations. The size of the bunch changes with time, depending on the direction in which the substrate is heated by a direct current. This observation provides evidence for the electromigration effect causing the step bunching, and from the field dependence we infer that adatoms, which are likely N, have effective positive charges. ©2000 The American Physical Society.published_or_final_versio

Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy

The scaling property of three-dimensional InN islands nucleated on GaN(0001) surface during molecular-beam epitaxy (MBE) is investigated. Due to the large lattice mismatch between InN and GaN (∼10%), the islands formed from the Stranski-Krastanow growth mode are dislocated. Despite the variations in (residual) strain and the shape, both the island size and pair separation distributions show the scaling behavior. Further, the size distribution resembles that for submonolayer homoepitaxy with the critical island size i = 1, suggesting that detachment of atoms is not significant. The above results also indicate strain is insignificant in determining the nucleation and growth of dislocated islands during heteroepitaxy by MBE.published_or_final_versio

Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy

We observe a significant reduction of threading dislocations in GaN grown on vicinal substrates of SiC(0001). Using scanning tunneling microscopy, we find films grown on vicinal substrates maintain the surface misorientation of the substrate and display terraces with straight edges. On top of the terraces there is no spiral mound, which is the main feature found for films grown on singular substrates. Transmission electron microscopy studies confirm that threading screw dislocations are reduced by two orders of magnitude while edge dislocations are reduced by one order. © 2000 American Institute of Physics.published_or_final_versio

Interleukin 23 promotes hepatocellular carcinoma metastasis via NF-kappa B induced matrix metalloproteinase 9 expression

published_or_final_versio

Subversion of actin dynamics by EspM effectors of attaching and effacing bacterial pathogens

Rho GTPases are common targets of bacterial toxins and type III secretion system effectors. IpgB1 and IpgB2 of Shigella and Map of enteropathogenic (EPEC) and enterohemorrhagic (EHEC) Escherichia coli were recently grouped together on the basis that they share a conserved WxxxE motif. In this study, we characterized six WxxxE effectors from attaching and effacing pathogens: TrcA and EspM1 of EPEC strain B171, EspM1 and EspM2 of EHEC strain Sakai and EspM2 and EspM3 of Citrobacter rodentium. We show that EspM2 triggers formation of global parallel stress fibres, TrcA and EspM1 induce formation of localized parallel stress fibres and EspM3 triggers formation of localized radial stress fibres. Using EspM2 and EspM3 as model effectors, we report that while substituting the conserved Trp with Ala abolished activity, conservative Trp to Tyr or Glu to Asp substitutions did not affect stress-fibre formation. We show, using dominant negative constructs and chemical inhibitors, that the activity of EspM2 and EspM3 is RhoA and ROCK-dependent. Using Rhotekin pull-downs, we have shown that EspM2 and EspM3 activate RhoA; translocation of EspM2 and EspM3 triggered phosphorylation of cofilin. These results suggest that the EspM effectors modulate actin dynamics by activating the RhoA signalling pathway

In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy

Indium nitride (InN) exists in two different structural phases, the equilibrium wurtzite (w) and the metastable zinc-blende (zb) phases. It is of scientific interest and practical relevance to examine the crystal structure of the epifilms during growth. In this paper, we use Patterson function inversion of low-energy electron diffraction I-V curves to reveal the preferential formation of zinc-blende InN wetting layer during the Stranski-Krastanov growth on GaN(0001). For three-dimensional islands nucleated afterwards on top of the wetting layer and for thick InN films, the equilibrium wurtzite structure is observed instead. This in situ revelation of the InN lattice structure is confirmed by ex situ transmission electron microscopy studies. Finally, the formation of zb-InN layer on w-GaN is explained in terms of the strain in the system. © 2005 The American Physical Society.published_or_final_versio