Effects of annealing on the electrical properties of Fe-doped InP

The electrical properties of Fe-doped semi-insulating (SI) InP were investigated before and after annealing. The annealing conditions were controlled by changing either the temperature or duration. Correlation between the change of electrical parameters with the change of defect concentration at different annealing stage was observed. The defects and the change of the concentrations in Fe-doped SI InP were detected by room-temperature photocurrent spectroscopy.published_or_final_versio

Thermally induced conduction type conversion in n-type InP

n-type semiconducting InP is changed into p-type semiconducting by short time annealing at 700 °C. Further annealing for a longer time leads to a second conduction-type conversion changing the material back to n type again but with a much higher resistivity. These conduction conversions indicate the formation of both acceptor and donor defects and the progressive variation of their relative concentrations during annealing. © 1999 American Institute of Physics.published_or_final_versio

Isolation and characterization of Rhodococcus ruber CGMCC3090 that hydrolyzes aliphatic, aromatic and heterocyclic nitriles

A bacterial strain was isolated from soil samples that had been polluted by nitrile compounds. This strain converts acrylonitrile to acrylamide with high activity. The nitrile hydrolysis activity was tested using eight substrates, including aliphatic, aromatic and heterocyclic (di)nitriles. All of the nitrilecompounds were hydrolyzed by the resting cells. The main (cyano-)amide products demonstrated that nitrile hydratase was abundantly produced in this strain and that it mediated monohydrolysis. The specific conversion rate decreased in the following order: acrylonitrile > 3-cyanopyridine > valeronitrile> adiponitrile > 2,3,4,5,6-pentafluorobenzonitrile >  -hydroxyphenylacetonitrile > 3-indoleaceto-nitrile > phthalonitrile, suggesting a higher conversion capability towards aliphatic nitriles. The strain that hadbroad substrate spectra was identified and named Rhodococcus ruber CGMCC3090 based on the 16S rDNA sequence

Positron-lifetime study of compensation defects in undoped semi-insulating InP

Positron-lifetime and infrared-absorption spectroscopies have been used to investigate the compensation defects that render undoped n-type liquid encapsulated Czochralski-grown InP semi-insulating under high-temperature annealing. The positron measurements, carried out over the temperature range of 25-300 K, reveal in the as-grown material a positron lifetime of 282±5 ps which we associate with either the isolated indium vacancy V 3- In or related hydrogen complexes. The shallow donor complex V InH 4, responsible for much of the n-type conductivity and the strong infrared absorption signal at 4320 nm, is ruled out as a significant trapping site on the grounds that its neutral state is present at too low a concentration. After annealing at 950°C, in conjunction with the disappearance of the V InH 4 infrared-absorption signal, trapping into V In-related centers is observed to increase slightly, and an additional positron trapping defect having a lifetime of 330 ps appears at a concentration of ∼10 16 cm -3, indicating divacancy trapping. These results support the recent suggestion that the V InH 4 complex present in as-grown InP dissociates during annealing, forming V InH (3-n)- n (0≤n≤3) complexes and that the recombination of V In with a phosphorus atom results in the formation of EL2-like deep donor P In antisite defect, which compensates the material. It is suggested that the divacancy formed on annealing is V InV P, and that this defect is probably a by-product of the P In antisite formation.published_or_final_versio

Electrical and FT-IR measurements of undoped N-type INP materials grown from various stoichiometric melts

P-rich, In-rich and Stoichiometric undoped InP melts have been synthesed by phosphorus in-situ injection method. InP crystal ingots have been grown from these melts by Liquid Encapsulated Czochralski (LEC). Samples from these ingots grown from various Stoichiometric melts have been characterized by Hall Effect and Fourier Transform Infrared (FT-IR) spectroscopy measurements respectively. The Hall Effect measurement results indicate that the net carrier concentration of P-inch undoped InP is higher than that of In-rich and Stoichiometric undoped InP materials. FT-IR spectroscopy measurements reveal that there are intensive absorption peaks which have been proved to be hydrogen related indium vacancy complex V InH 4. By comparing FT-IR spectra, it is found that P-rich InP material has the most intensive absorption peak of V InH 4, while In-rich InP material has the weakest absorption peak.published_or_final_versio

Insights into the subsurface transport of As(V) and Se(VI) in produced water from hydraulic fracturing using soil samples from Qingshankou Formation, Songliao Basin, China.

Produced water is a type of wastewater generated from hydraulic fracturing, which may pose a risk to the environment and humans due to its high ionic strength and the presence of elevated concentrations of metals/metalloids that exceed maximum contamination levels. The mobilization of As(V) and Se(VI) in produced water and selected soils from Qingshankou Formation in the Songliao Basin in China were investigated using column experiments and synthetic produced water whose quality was representative of waters arising at different times after well creation. Temporal effects of produced water on metal/metalloid transport and sorption/desorption were investigated by using HYDRUS-1D transport modelling. Rapid breakthrough and long tailings of As(V) and Se(VI) transport were observed in Day 1 and Day 14 solutions, but were reduced in Day 90 solution probably due to the elevated ionic strength. The influence of produced water on the hydrogeological conditions (i.e., change between equilibrium and non-equilibrium transport) was evidenced by the change of tracer breakthrough curves before and after the leaching of produced water. This possibly resulted from the sorption of polyacrylamide (PAM (-CH2CHCONH2-)n) onto soil surfaces, through its use as a friction reducer in fracturing solutions. The sorption was found to be reversible in this study. Minimal amounts of sorbed As(V) were desorbed whereas the majority of sorbed Se(VI) was readily leached out, to an extent which varied with the composition of the produced water. These results showed that the mobilization of As(V) and Se(VI) in soil largely depended on the solution pH and ionic strength. Understanding the differences in metal/metalloid transport in produced water is important for proper risk management

Native donors and compensation in Fe-doped liquid encapsulated Czochralski InP

Undoped and Fe-doped liquid encapsulated Czochralski (LEC) InP has been studied by Hall effect, current-voltage (I-V), and infrared absorption (IR) spectroscopy. The results indicate that a native hydrogen vacancy complex donor defect exists in as-grown LEC InP. By studying the IR results, it is found that the concentration of this donor defect in Fe-doped InP is much higher than that in undoped InP. This result is consistent with the observation that a much higher concentration of Fe 2+ than the apparent net donor concentration is needed to achieve the semi-insulating (SI) property in InP. By studying the I-V and IR results of Fe-doped InP wafers sliced from different positions on an ingot, the high concentration of Fe 2+ is found to correlate with the existence of this hydrogen complex. The concentration of this donor defect is high in wafers from the top of an ingot. Correspondingly, a higher concentration of Fe 2+ can be detected in these wafers. These results reveal the influence of the complex defect on the compensation and uniformity of Fe-doped SI InP materials. © 2001 American Institute of Physics.published_or_final_versio

Compensation defects in annealed undoped liquid encapsulated Czochralski InP

As-grown undoped n-type semiconducting and annealed undoped semi-insulating (SI) liquid encapsulated Czochralski (LEC) InP has been studied by temperature dependent Hall measurement, photoluminescence spectroscopy, infrared absorption, and photocurrent spectroscopy. P-type conduction SI InP can frequently be obtained by annealing undoped LEC InP. This is caused by a high concentration of thermally induced native acceptor defects. In some cases, it can be shown that the thermally induced n-type SI property of undoped LEC InP is caused by a midgap donor compensating for the net shallow acceptors. The midgap donor is proposed to be a phosphorus antisite related defect. Traps in annealed SI InP have been detected by photocurrent spectroscopy and have been compared with reported results. The mechanisms of defect formation are discussed. © 1999 American Institute of Physics.published_or_final_versio

On the Successful Encapsulation of Water Droplets into Oil Droplets

Compound water-in-oil microdroplets can serve as microreactors in chemical and biological analyses. The inkjet printing is a useful technique to generate compound microdroplets by droplet impact. To understand the underlying physics during the droplet impact, a combined experimental and numerical study is carried out. The effect of spreading condition, impact velocity, and oil viscosity are investigated. The balance of the tripe-line among the three interfaces dominates primarily the stable morphology of the compound droplet. Reducing oil viscosity can reduce the required impact velocity. High impact velocity is necessary to reduce the side-slipping of the water droplet

Compensation ratio-dependent concentration of a V InH 4 complex in n-type liquid encapsulated Czochralski InP

The concentration of hydrogen-indium vacancy complex V InH 4 in liquid encapsulated Czochralski undoped and Fe-doped n-type InP has been studied by low-temperature infrared absorption spectroscopy. The V InH 4 complex is found to be a dominant intrinsic shallow donor defect with concentrations up to ∼10 16 cm -3 in as-grown liquid encapsulated Czochralski InP. The concentration of the V InH 4 complex is found to increase with the compensation ratio in good agreement with the proposed defect formation model of Walukiewicz [W. Walukiewicz, Phys. Rev. B 37, 4760 (1998); Appl. Phys. Lett. 54, 2094 (1989)], which predicts a Fermi-level-dependent concentration of amphoteric defects. © 1998 American Institute of Physics.published_or_final_versio