Fast optical control of spin in semiconductor interfacial structures

We report on a picosecond-fast optical removal of spin polarization from a self-confined photo-carrier system at an undoped GaAs/AlGaAs interface possessing superior long-range and high-speed spin transport properties. We employed a modified resonant spin amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations originating from different excitation laser pulses. We demonstrate that the density of spins, which is injected into the system by means of the optical orientation, can be controlled by reducing the electrostatic confinement of the system using an additional generation of photocarriers. It is also shown that the disturbed confinement recovers within hundreds of picoseconds after which spins can be again photo-injected into the system

Absence of skew scattering in two-dimensional systems: Testing the origins of the anomalous Hall effect

We study the anomalous Hall conductivity in spin-polarized, asymmetrically confined two-dimensional electron and hole systems, focusing on skew-scattering contributions to the transport. We find that the skew scattering, principally responsible for the extrinsic contribution to the anomalous Hall effect, vanishes for the two-dimensional electron system if both chiral Rashba subbands are partially occupied, and vanishes always for the two-dimensional hole gas studied here, regardless of the band filling. Our prediction can be tested with the proposed coplanar two-dimensional electron/hole gas device and can be used as a benchmark to understand the crossover from the intrisic to the extrinsic anomalous Hall effect.Comment: 4 pages, 2 figures include

Photometric Observations of Star Formation Activity in Early Type Spirals

We observationally study the current star formation activities of early type spiral galaxies. We construct a complete sample of 15 early type spirals having far-infrared (FIR) to optical B band luminosity ratios, L(FIR)/L(B), larger than the average of the type, and make their CCD imaging of the R and H-alpha bands. The equivalent widths of H-alpha emission increase with increasing L(FIR)/L(B), indicating that L(FIR)/L(B) can be an indicator of star formation for such early type spirals with star formation activities higher than the average. For all of the observed early type spirals, the extended HII regions exist at the central regions with some asymmetric features. H-alpha emission is more concentrated to the galactic center than the R band light, and the degree of the concentration increases with the star formation activity. We also analyze the relation between the star formation activities and the existence of companion galaxies in the sample galaxies and other bright early type spirals. No correlation is found and this suggests that the interaction is not responsible for all of the star formation activities of early type spirals.Comment: LaTex, 23 pages (2 tables included), plus 9 Postscript figures & 1 table. To be published in AJ (November issue

Reconfigurable Boolean Logic using Magnetic Single-Electron Transistors

We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistors with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer which induce a voltage shift on the Coulomb blockade oscillations of the MSET. We show that we can arbitrarily reprogram the function of the device from an n-type SET for in-plane magnetization of the GaMnAs layer to p-type SET for out-of-plane magnetization orientation. Moreover, we demonstrate a set of reprogrammable Boolean gates and its logical complement at the single device level. Finally, we propose two sets of reconfigurable binary gates using combinations of two MSETs in a pull-down network

Quantum gates using electronic and nuclear spins of Yb+^{+} in a magnetic field gradient

An efficient scheme is proposed to carry out gate operations on an array of trapped Yb$^+$ ions, based on a previous proposal using both electronic and nuclear degrees of freedom in a magnetic field gradient. For this purpose we consider the Paschen-Back regime (strong magnetic field) and employ a high-field approximation in this treatment. We show the possibility to suppress the unwanted coupling between the electron spins by appropriately swapping states between electronic and nuclear spins. The feasibility of generating the required high magnetic field is discussed