Helicity-dependent terahertz emission spectroscopy of topological insulator Sb2Te3 thin films

[[abstract]]We report on helicity-dependent terahertz emissions that originate from the helicity-dependent photocurrents in topological insulator S b 2 T e 3 thin films due to ultrafast optical excitation. The polarity of the emitted terahertz radiation is controlled by both the incident angle and the helicity of optical pulses. Using an unprecedented decomposition-recombination procedure in the time domain, the signals of the Dirac fermions are fully separated from bulk contributions. These results provide insights into the optical coupling of topological surface states and open up opportunities for applying helicity-dependent terahertz emission spectroscopy in spintronics.[[notice]]補正完

Toward omnidirectional light absorption by plasmonic effect for high-efficiency flexible nonvacuum Cu (In, Ga) Se2 thin film solar cells

We have successfully demonstrated a great advantage of plasmonic Au nanoparticles for efficient enhancement of Cu(In,Ga)Se2(CIGS) flexible photovoltaic devices. The incorporation of Au NPs can eliminate obstacles in the way of developing ink-printing CIGS flexible thin film photovoltaics (TFPV), such as poor absorption at wavelengths in the high intensity region of solar spectrum, and that occurs significantly at large incident angle of solar irradiation. The enhancement of external quantum efficiency and photocurrent have been systematically analyzed via the calculated electromagnetic field distribution. Finally, the major benefits of the localized surface plasmon resonances (LSPR) in visible wavelength have been investigated by ultrabroadband pump–probe spectroscopy, providing a solid evidence on the strong absorption and reduction of surface recombination that increases electron–hole generation and improves the carrier transportation in the vicinity of pn-juctio

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs) with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD) and chemical bath deposition (CBD) as used by the Cu(In,Ga)Se2 (CIGS) thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase

Crystalline Engineering Toward Large-Scale High-Efficiency Printable Cu(In,Ga)Se₂ Thin Film Solar Cells on Flexible Substrate by Femtosecond Laser Annealing Process

Ink-printing method emerges as a viable way for manufacturing large-scale flexible Cu­(In,Ga)­Se₂ (CIGS) thin film photovoltaic (TFPV) devices owing to its potential for the rapid process, mass production, and low-cost nonvacuum device fabrication. Here, we brought the femtosecond laser annealing (fs-LA) process into the ink-printing CIGS thin film preparation. The effects of fs-LA treatment on the structural and optoelectronic properties of the ink-printing CIGS thin films were systematically investigated. It was observed that, while the film surface morphology remained essentially unchanged under superheating, the quality of crystallinity was significantly enhanced after the fs-LA treatment. Moreover, a better stoichiometric composition was achieved with an optimized laser scanning rate of the laser beam, presumably due to the much reduced indium segregation phenomena, which is believed to be beneficial in decreasing the defect states of In_Se, V_Se, and In_Cu. Consequently, the shunt leakage current and recombination centers were both greatly decreased, resulting in a near 20% enhancement in photovoltaic conversion efficiency

Snapshots of Dirac fermions near the Dirac point in topological insulators

ABSTRACT: The recent focus on topological insulators i