3 research outputs found
Additional file 1: of Large-Area Growth of Uniform Single-Layer MoS2 Thin Films by Chemical Vapor Deposition
Formation of nonuniform MoS 2 clusters. (DOCX 379 kb
Improved Growth Behavior of Atomic-Layer-Deposited High‑<i>k</i> Dielectrics on Multilayer MoS<sub>2</sub> by Oxygen Plasma Pretreatment
We
report on the effect of oxygen plasma treatment of two-dimensional
multilayer MoS<sub>2</sub> crystals on the subsequent growth of Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> films, which were formed
by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino)hafnium
metal precursors, respectively, with water oxidant. Due to the formation
of an ultrathin Mo-oxide layer on the MoS<sub>2</sub> surface, the
surface coverage
of Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> films was significantly
improved compared to those on pristine MoS<sub>2</sub>, even at a
high ALD temperature. These results indicate that the surface modification
of MoS<sub>2</sub> by oxygen plasma treatment can have a major impact
on the subsequent deposition of high-<i>k</i> thin films,
with important implications on their integration in thin film transistors
Salvia hayatana Makino
原著和名: ヤンバルタムラサウ科名: シソ科 = Labiatae採集地: 台湾 太魯閤〜天祥 (台湾省 太魯閤〜天祥)採集日: 1968/3/14採集者: 萩庭丈壽整理番号: JH048421国立科学博物館整理番号: TNS-VS-99842