Improved
Growth Behavior of Atomic-Layer-Deposited High‑<i>k</i> Dielectrics on Multilayer MoS<sub>2</sub> by
Oxygen Plasma Pretreatment
- Publication date
- Publisher
Abstract
We
report on the effect of oxygen plasma treatment of two-dimensional
multilayer MoS<sub>2</sub> crystals on the subsequent growth of Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> films, which were formed
by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino)hafnium
metal precursors, respectively, with water oxidant. Due to the formation
of an ultrathin Mo-oxide layer on the MoS<sub>2</sub> surface, the
surface coverage
of Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> films was significantly
improved compared to those on pristine MoS<sub>2</sub>, even at a
high ALD temperature. These results indicate that the surface modification
of MoS<sub>2</sub> by oxygen plasma treatment can have a major impact
on the subsequent deposition of high-<i>k</i> thin films,
with important implications on their integration in thin film transistors
