Qualitative reasoning with directional relations

AbstractQualitative spatial reasoning (QSR) pursues a symbolic approach to reasoning about a spatial domain. Qualitative calculi are defined to capture domain properties in relation operations, granting a relation algebraic approach to reasoning. QSR has two primary goals: providing a symbolic model for human common-sense level of reasoning and providing efficient means for reasoning. In this paper, we dismantle the hope for efficient reasoning about directional information in infinite spatial domains by showing that it is inherently hard to decide consistency of a set of constraints that represents positions in the plane by specifying directions from reference objects. We assume that these reference objects are not fixed but only constrained through directional relations themselves. Known QSR reasoning methods fail to handle this information

Exchange interaction in p-type GaAs/Al_{x}Ga_{1-x}As heterostructures studied by magnetotransport

Low-temperature magnetotransport experiments have been performed on a p-type GaAs/AlxGa1-xAs quantum well. From activation measurements on Shubnikov–de Haas conduction minima it was found that exchange interactions can be of great importance for both odd and even filling factors and strongly influence the observed periodicity. Furthermore, it was found that the temperature dependence of Shubnikov–de Haas oscillations in the low-magnetic-field regime could not be explained within a single-particle model based on a solution of the full Luttinger Hamiltonian in a magnetic field. Numerical simulations of Shubnikov–de Haas spectra, based on a model that treats hole exchange interactions in a simplified manner, show unambiguously that exchange driven enhancement of hole "spin" splittings are extremely important at magnetic fields as low as 1.5 T. Also, the inclusion of a valence-band warping in the calculations is shown to be essential. Qualitatively, most experimental observations could be described within the presented model. Our results imply that, in any hole system, the effective masses obtained from temperature-dependent SdH measurements are to be treated with extreme care as they can deviate from their single-particle value by as much as a factor of 2

Large asymmetric Stark shift in GaxIn1–xAs/InP/InAsyP1–y composite quantum wells

Strong asymmetric Stark shift in excess of 115 meV of the lowest energy transition has been experimentally observed in composite Ga/sub x/In/sub 1-x/As/InP/InAs/sub y/P/sub 1-y/ quantum-well system. In this structure, we can independently control the confinement of electrons and holes by controlling the strain. The photoexcited electrons and holes are confined in spatially separated regions without the application of an electric field. Due to the large asymmetry in the structure, we observed large blueshifts and redshifts of the absorption edge with an applied electric field. All our measurements agree with the calculations within the framework of the Bir-Pikus strain Hamiltonia

Exchange-correlation energy of a hole gas including valence band coupling

We have calculated an accurate exchange-correlation energy of a hole gas, including the complexities related to the valence band coupling as occurring in semiconductors like GaAs, but excluding the band warping. A parametrization for the dependence on the density and the ratio between light- and heavy-hole masses is given. We apply our results to a hole gas in an AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well and calculate the two-dimensional band structure and the band-gap renormalization. The inclusion of the valence band coupling in the calculation of the exchange-correlation potentials for holes and electrons leads to a much better agreement between theoretical and experimental data than when it is omitted

PICOSECOND CARRIER CAPTURE BY A SEPARATE CONFINEMENT LASER STRUCTURE

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Effect of annealing on formation of self-assembled (In,Ga)As quantum wires on GaAs (100) by molecular beam epitaxy

The role of annealing for (In,Ga)As self-organized quantum wire (QWR) formation on GaAs (100) during growth of (In,Ga)As/GaAs superlattice (SL) structures is studied by X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence (PL) spectroscopy. XRD and AFM evidence that annealing after the supply of each layer of elongated (In,Ga)As quantum dots (QDs) in the SL is the crucial process for QWR formation. We conclude that during annealing, the shape anisotropy of the QDs is enhanced due to anisotropic mass transport and the QDs become connected along the [0-11] direction. Strain reduction by In desorption, revealed by XRD and PL, which accompanies this process, then results in well defined, uniform QWR arrays by repetition in SL growt

Formation of InAs quantum dot arrays on GaAs (100) by self-organized anisotropic strain engineering of a (In,Ga)As superlattice template

We demonstrate the formation of well-defined InAs quantum dot (QD) arrays by self-organized engineering of anisotropic strain in a (In,Ga)As/GaAs superlattice (SL). Due to the accumulation and improvement of the uniformity of the strain-field modulation along [011], formation of InAs QD arrays along [0-11] with 140 nm lateral periodicity is clearly observed on the SL template when the number of SL periods is larger than ten. By enhancing the In adatom surface migration length at low growth rates, clear arrays of single InAs QDs are obtained. The QD arrays exhibit strong photoluminescence efficiency that is not reduced compared to that from InAs QD layers on GaAs. Hence, ordering by self-organized anisotropic strain engineering maintains the high structural quality of InAs QD

Heterogeneous hydride pyrolysis in a chemical beam epitaxy cracker cell and growth of high quality InP

The decomposition of phosphine and arsine in a chemical beam epitaxy cracker cell was investigated with a quadrupole mass spectrometer. We have determined the kinetical parameters for a unimolecular reaction of the first order, i.e. the activation energy and frequency factor, from the decomposition efficiency as a function of temperature. These results are compared with data from literature. We find the lowest activation energies ever reported for the hydride pyrolysis, namely 72 and 48 kJ/mol for phosphine and arsine, respectively. This is due to the heterogeneous decomposition on catalytic molybdenum baffles inside the cracker cell. Additionally, we have studied the impurity incorporation in epitaxially grown bulk InP layers in relation to the efficiency of this particular molybdenum containing cracker cell. Impurity levels were determined by fitting calculated Hall values to experimental data. The best quality is achieved for the cracker temperature at which the efficiency starts to saturate. At this cracker temperature, optimized mass flow rates resulted in InP layers with a maximum mobility of 186¿000 cm2/V¿s and impurity concentrations in the low 1014 cm-3 range

Digital alloy interface grading of an InAlAs/InGaAs quantum cascade laser structure studied by cross-sectional scanning tunneling microscopy

We have studied an InGaAs/InAlAs quantum cascade laser structure with cross-sectional scanning tunneling microscopy. In the quantum cascade laser structure digital alloy grading was used to soften the barriers of the active region. We show that due to alloy fluctuations, softening of the barriers occurs even without the digital gradin

Carrier dynamics of LT InAs/GaAs QDs using time resolved differential reflectivity

We present a Time Resolved Differential Reflectivity (TRDR) study of LT (low temperature grown) Stransky - Krastanov InAs/GaAs Quantum Dots (QDs) grown using molecular beam epitaxy. The photoluminescence (PL) spectrum shows a QD-peak around 1200nm. In the TRDR measurements we observe an initial fast decay (80ps) followed by a much slower decay of about 800ps. The strong temperature dependence of the PL-signal is not observed in the reflectivity signal. This leads us to conclude that the electrons are trapped at a fast rate by As antisite defects while the hole decay dynamics take place at a slower rate, which is also monitored in TRDR