1 research outputs found
Interrelation between Chemical, Electronic, and Charge Transport Properties of Solution-Processed Indium–Zinc Oxide Semiconductor Thin Films
<i>Solution-processed</i> metal oxide semiconductors
are of high interest for the preparation
of high-mobility transparent metal oxide (TMO) semiconductor thin
films and thin film transistors (TFTs). It has been shown that the
charge transport properties of indium–zinc oxide (IZO) thin
films from molecular precursor solutions depend strongly on the preparation
conditions, in particular on the precursor conversion temperature <i>T</i><sub>pc</sub> and, to some surprise, also on the concentration
of the precursor solution. Therefore, the chemical and the electronic
structure of solution-processed IZO thin films have been studied in
detail with X-ray photoelectron spectroscopy (XPS) under systematic
variation of <i>T</i><sub>pc</sub> and the concentration
of the precursor solution. A distinct spectral feature is observed
in the valence band spectra close to the Fermi level at <i>E</i><sub>B</sub> = 0.45 eV binding energy which correlates with the trends
in the sheet resistivity, the field effect mobility μ<sub>FE</sub>, and the optical gap <i>E</i><sub>g</sub><sup>opt</sup> from four-point-probe (4PP), TFT, and UV–vis measurements,
respectively. A comprehensive model of the interrelation between the
conditions during solution-processing, the chemical and electronic
structure, and the charge transport properties is developed