Interrelation between Chemical, Electronic, and Charge Transport Properties of Solution-Processed Indium–Zinc Oxide Semiconductor Thin Films

Abstract

<i>Solution-processed</i> metal oxide semiconductors are of high interest for the preparation of high-mobility transparent metal oxide (TMO) semiconductor thin films and thin film transistors (TFTs). It has been shown that the charge transport properties of indium–zinc oxide (IZO) thin films from molecular precursor solutions depend strongly on the preparation conditions, in particular on the precursor conversion temperature <i>T</i>_pc and, to some surprise, also on the concentration of the precursor solution. Therefore, the chemical and the electronic structure of solution-processed IZO thin films have been studied in detail with X-ray photoelectron spectroscopy (XPS) under systematic variation of <i>T</i>_pc and the concentration of the precursor solution. A distinct spectral feature is observed in the valence band spectra close to the Fermi level at <i>E</i>_B = 0.45 eV binding energy which correlates with the trends in the sheet resistivity, the field effect mobility μ_FE, and the optical gap <i>E</i>_g^opt from four-point-probe (4PP), TFT, and UV–vis measurements, respectively. A comprehensive model of the interrelation between the conditions during solution-processing, the chemical and electronic structure, and the charge transport properties is developed