Controlling spin relaxation with a cavity

Spontaneous emission of radiation is one of the fundamental mechanisms by which an excited quantum system returns to equilibrium. For spins, however, spontaneous emission is generally negligible compared to other non-radiative relaxation processes because of the weak coupling between the magnetic dipole and the electromagnetic field. In 1946, Purcell realized that the spontaneous emission rate can be strongly enhanced by placing the quantum system in a resonant cavity -an effect which has since been used extensively to control the lifetime of atoms and semiconducting heterostructures coupled to microwave or optical cavities, underpinning single-photon sources. Here we report the first application of these ideas to spins in solids. By coupling donor spins in silicon to a superconducting microwave cavity of high quality factor and small mode volume, we reach for the first time the regime where spontaneous emission constitutes the dominant spin relaxation mechanism. The relaxation rate is increased by three orders of magnitude when the spins are tuned to the cavity resonance, showing that energy relaxation can be engineered and controlled on-demand. Our results provide a novel and general way to initialise spin systems into their ground state, with applications in magnetic resonance and quantum information processing. They also demonstrate that, contrary to popular belief, the coupling between the magnetic dipole of a spin and the electromagnetic field can be enhanced up to the point where quantum fluctuations have a dramatic effect on the spin dynamics; as such our work represents an important step towards the coherent magnetic coupling of individual spins to microwave photons.Comment: 8 pages, 6 figures, 1 tabl

Si-29 nuclear spins as a resource for donor spin qubits in silicon

Nuclear spin registers in the vicinity of electron spins in solid state systems offer a powerful resource to address the challenge of scalability in quantum architectures. We investigate here the properties of 29Si nuclear spins surrounding donor atoms in silicon, and consider the use of such spins, combined with the donor nuclear spin, as a quantum register coupled to the donor electron spin. We find the coherence of the nearby 29Si nuclear spins is effectively protected by the presence of the donor electron spin, leading to coherence times in the second timescale—over two orders of magnitude greater than the coherence times in bulk silicon. We theoretically investigate the use of such a register for quantum error correction (QEC), including methods to protect nuclear spins from the ionisation/neutralisation of the donor, which is necessary for the re-initialisation of the ancillae qubits. This provides a route for multi-round QEC using donors in silicon

Quantum control of donor spins in silicon and their environment

Donors in silicon, which combine an electron and nuclear spin, are some of the most promising candidates for quantum information. The electron spin has been proposed as a register with fast manipulation and the nuclear spin as a memory with long coherence times. However, this division reduces the complexity of the donor system, in particular behaviors emerging from their interaction. In natural silicon, there is also the presence of 29Si nuclear spins in the donor environment; though they are generally seen as a source of decoherence, they are quantum systems that can be investigated too. The main subject of this thesis is the study of the interactions between these various spins, using different methods to probe and control them. I first concentrate on the coupling between the donor and the 29Si spins. This coupling can be perturbed by the application of dynamical decoupling on the donor electron spin, whose evolution can be made sensitive to the number of 29Si spins interacting together. I then propose an error correction scheme using the donor and 29Si spins, showing key requirements such as coherence times and methods for manipulation and initialization. Secondly, I focus on the donor itself, in a regime where the hyperfine and Zeeman couplings compete with each other. Here, the spin transitions can have different sensitivities to the magnetic environment, and can even be suppressed to first order, resulting in coherence times up to seconds with electron spin-like manipulation times. Controlling this sensitivity was also used to probe the effect of the donor on the 29Si spin bath evolution. Finally, I use electric fields to modulate the hyperfine coupling within the donor. I first characterize the spins’ sensitivity to the electric field, and then demonstrate electrical switching of the nuclear spin response to an external magnetic excitation.</p

Pulse techniques for quantum information processing

The inherent properties of quantum systems, such as superposition and entanglement, offer a new paradigm to the treatment and storage of information in physical systems, giving rise to potentially faster computation, more secure communication, and better sensors. Electron spins in a range of host environments are ideal systems for representing quantum information, and such systems can be both characterized and controlled through the arsenal of pulse electron paramagnetic resonance (EPR) techniques. In this article, we introduce basic concepts behind quantum information processing with spins, including how spin decoherence (i.e., the corruption of quantum information) has been studied and mitigated in various systems; how EPR methods can be used to manipulate quantum information in spins with high fidelity; how individual spins can be used as high-resolution sensors (e.g., of magnetic field); and how multiple spins can be coupled together to develop the building blocks of a larger scale quantum computer

Electrometry by optical charge conversion of deep defects in 4H-SiC

Optically active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain, and temperature. Modern sensing techniques take advantage of the relaxation and coherence times of the spin state within these defects. Here we show that the defect charge state can also be used to sense the environment, in particular high-frequency (megahertz to gigahertz) electric fields, complementing established spin-based techniques. This is enabled by optical charge conversion of the defects between their photoluminescent and dark charge states, with conversion rate dependent on the electric field (energy density). The technique provides an all-optical high-frequency electrometer which is tested in 4H-SiC for both ensembles of divacancies and silicon vacancies, from cryogenic to room temperature, and with a measured sensitivity of 41 &#xB1; 8 &#x2009; ( V / c m ) 2 / H z . Finally, due to the piezoelectric character of SiC, we obtain spatial 3D maps of surface acoustic wave modes in a mechanical resonator