Good electrical contacts for high resistivity (Cd,Mn)Te crystals

We consider that semi-insulating (Cd,Mn)Te crystals may well successfully replace the commonly used (Cd,Zn)Te crystals as a material for manufacturing large-area X- and gamma-ray detectors. The Bridgman growth method yields good quality and high-resistivity (10{sup 9}-10{sup 10} {Omega}-cm) crystals of (Cd,Mn)Te:V. Doping with vanadium ({approx} 10{sup 16} cm{sup -3}), which acts as a compensating agent, and annealing in cadmium vapors, which reduces the number of cadmium vacancies in the as-grown crystal, ensure this high resistivity. Detector applications of the crystals require satisfactory electrical contacts. Hence, we explored techniques of ensuring good electrical contacts to semi-insulating (Cd,Mn)Te crystals. Our findings are reported here. Before depositing the contact layers, we prepared an 'epi-ready' surface of the crystal platelet by a procedure described earlier for various tellurium-based II-VI compound crystals. A molecular beam epitaxy (MBE) apparatus was used to deposit various types of contact layers: Monocrystalline semiconductor layers, amorphous- and nanocrystalline semiconductor layers, and metal layers were studied. We employed ZnTe heavily doped ({approx} 10{sup 18} cm{sup -3}) with Sb, and CdTe heavily doped ({approx} 10{sup 17} cm{sup -3}) with In as the semiconductors to create contact layers that subsequently enable good contact (with a narrow, tunneling barrier) to the Au layer that usually is applied as the top contact layer. We describe and discuss the technology and some properties of the electrical contacts to semi-insulating (Cd,Mn)Te

CdMnTe in X-ray and Gamma-ray Detection: Potential Applications

CdMnTe can be a good candidate for gamma-ray detection because of its wide band-gap, high resistivity, and good electro-transport properties. Further, the ability to grow CMT crystals at relatively low temperatures ensures a high yield for manufacturing detectors with good compositional uniformity and few impurities. Our group at Brookhaven National Laboratory is investigating several CMT crystals, selecting a few of them to make detectors. In this paper, we discuss our initial characterization of these crystals and describe our preliminary results with a gamma-ray source

Tellurium precipitates in (Cd,Mn)Te:V crystals: Effects of annealing

We suggest that (Cd,Mn)Te is a suitable material for fabricating gamma- and X-ray detectors. Our investigations, reported here, are focused on producing high-quality (Cd,Mn)Te crystals with high resistivity (10{sup 9} {Omega}-cm) by the Bridgman method. As-grown, undoped (Cd,Mn)Te crystals are typically p-type, signifying that they contain excess Cd vacancies (acting as acceptors), accumulated during growth. Doping with vanadium atoms, which function as compensating centers, results in a semi-insulating material (Cd,Mn)Te:V. Properly annealing the platelets in cadmium vapors at uniform temperature reduces the number of cadmium vacancies, and lowers the level of the vanadium doping required for compensation. We found that annealing in cadmium vapors not only decreases the concentration of the native cadmium vacancies but also improves the crystal's quality. Infrared observations of the interior of the samples show that annealing in a temperature gradient perpendicular to the platelet has an additional effect, viz., the tellurium precipitates migrate towards the side where the temperature is higher. We demonstrate, with IR pictures of monocrystalline (Cd,Mn)Te:V platelets cut parallel to the (111) crystal planes, the influence on tellurium inclusions and precipitates of various conditions of annealing in cadmium vapors

Contacts for high-resistivity (Cd,Mn)Te crystals

Semi-insulating (Cd,Mn)Te crystals offer a material that may compete well with the commonly used (Cd,Zn)Te crystals for manufacturing large-area X- and gamma-ray detectors. The Bridgman growth method yields good quality, high-resistivity (10{sup 9} - 10{sup 10} {Omega} {center_dot} cm) crystals of (Cd,Mn)Te:V. Doping the as-grown crystals with the compensating agent vanadium ({approx} 10{sup 16} cm{sup -3}) ensures their high resistivity; thereafter, annealing them in cadmium vapors reduces the number of cadmium vacancies. Applying the crystals as detectors necessitates having satisfactory electrical contacts. Accordingly, we explored various techniques of ensuring good electrical contacts to these semi-insulating (Cd,Mn)Te crystals, assessing metallic layers, monocrystalline semiconductor layers, and amorphous (or nanocrystalline) semiconductor layers. We found that ZnTe heavily doped ({approx} 10{sup 18} cm{sup -3}) with Sb, and CdTe heavily doped ({approx} 10{sup 17} cm{sup -3}) with In, proved satisfactory semiconductor contact layers. They subsequently enabled us to establish good contacts (with only narrow tunneling barriers) to the Au layer that usually constitutes the most external contact layer. We outline our technology of applying electrical contacts to semi-insulating (Cd,Mn)Te, and describe some important properties

Charge transport properties of CdMnTe radiation detectors

Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature

Metabolic syndrome is associated with similar long-term prognosis in non-obese and obese patients. An analysis of 45 615 patients from the nationwide LIPIDOGRAM 2004-2015 cohort studies

Aims We aimed to evaluate the association between metabolic syndrome (MetS) and long-term all-cause mortality. Methods The LIPIDOGRAM studies were carried out in the primary care in Poland in 2004, 2006 and 2015. MetS was diagnosed based on the National Cholesterol Education Program, Adult Treatment Panel III (NCEP/ATP III) and Joint Interim Statement (JIS) criteria. The cohort was divided into four groups: non-obese patients without MetS, obese patients without MetS, non-obese patients with MetS and obese patients with MetS. Differences in all-cause mortality was analyzed using Kaplan-Meier and Cox regression analyses. Results 45,615 participants were enrolled (mean age 56.3, standard deviation: 11.8 years; 61.7% female). MetS was diagnosed in 14,202 (31%) by NCEP/ATP III criteria, and 17,216 (37.7%) by JIS criteria. Follow-up was available for 44,620 (97.8%, median duration 15.3 years) patients. MetS was associated with increased mortality risk among the obese (hazard ratio, HR: 1.88 [95% CI, 1.79-1.99] and HR: 1.93 [95% CI 1.82-2.04], according to NCEP/ATP III and JIS criteria, respectively) and non-obese individuals (HR: 2.11 [95% CI 1.85-2.40] and 1.7 [95% CI, 1.56-1.85] according to NCEP/ATP III and JIS criteria respectively). Obese patients without MetS had a higher mortality risk than non-obese patients without MetS (HR: 1.16 [95% CI 1.10-1.23] and HR: 1.22 [95%CI 1.15-1.30], respectively in subgroups with NCEP/ATP III and JIS criteria applied). Conclusions MetS is associated with increased all-cause mortality risk in non-obese and obese patients. In patients without MetS obesity remains significantly associated with mortality. The concept of metabolically healthy obesity should be revised