350 research outputs found

    Deviations from Matthiessen's Rule for SrRuO3{\rm SrRuO_3} and CaRuO3{\rm CaRuO_3}

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    We have measured the change in the resistivity of thin films of SrRuO3{\rm SrRuO_3} and CaRuO3{\rm CaRuO_3} upon introducing point defects by electron irradiation at low temperatures, and we find significant deviations from Matthiessen's rule. For a fixed irradiation dose, the induced change in resistivity {\it decreases} with increasing temperature. Moreover, for a fixed temperature, the increase in resistivity with irradiation is found to be {\it sublinear}. We suggest that the observed behavior is due to the marked anisotropic scattering of the electrons together with their relatively short mean free path (both characteristic of many metallic oxides including cuprates) which amplify effects related to the Pippard ineffectiveness condition

    Calculated optical properties of Si, Ge, and GaAs under hydrostatic pressure

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    The macroscopic dielectric function in the random-phase-approximation without local field effect has been implemented using the local density approximation with an all electron, full-potential linear muffin-tin orbital basis-set. This method is used to investigate the optical properties of the semiconductors Si, Ge, and GaAs under hydrostatic pressure. The pressure dependence of the effective dielectric function is compared to the experimental data of Go\~ni and coworkers, and an excellent agreement is found when the so called ``scissors-operator'' shift (SOS) is used to account for the correct band gap at Γ\Gamma. The effect of the 3d3d semi-core states in the interband transitions hardly changes the static dielectric function, ϵ\epsilon_\infty; however, their contribution to the intensity of absorption for higher photon energies is substantial. The spin-orbit coupling has a significant effect on ϵ\epsilon_\infty of Ge and GaAs, but not of Si. The E1E_1 peak in the dynamical dielectric function is strongly underestimated for Si, but only slightly for Ge and GaAs, suggesting that excitonic effects might be important only for Si.Comment: 29 RevTex pages and 12 figs; in press in Physical Review

    The role of the alloy structure in the magnetic behavior of granular systems

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    The effect of grain size, easy magnetization axis and anisotropy constant distributions in the irreversible magnetic behavior of granular alloys is considered. A simulated granular alloy is used to provide a realistic grain structure for the Monte Carlo simulation of the ZFC-FC curves. The effect of annealing and external field is also studied. The simulation curves are in good agreement with the FC and ZFC magnetization curves measured on melt spun Cu-Co ribbons.Comment: 13 pages, 10 figures, submitted to PR

    Exact Kohn-Sham exchange kernel for insulators and its long-wavelength behavior

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    We present an exact expression for the frequency-dependent Kohn-Sham exact-exchange (EXX) kernel for periodic insulators, which can be employed for the calculation of electronic response properties within time-dependent (TD) density-functional theory. It is shown that the EXX kernel has a long-wavelength divergence behavior of the exact full exchange-correlation kernel and thus rectifies one serious shortcoming of the adiabatic local-density approximation and generalized-gradient approximations kernels. A comparison between the TDEXX and the GW-approximation-Bethe-Salpeter-equation approach is also made.Comment: two column format 6 pages + 1 figure, to be publisehd in Physical Review

    Implementation of an all-electron GW approximation based on the PAW method without plasmon pole approximation: application to Si, SiC, AlAs, InAs, NaH and KH

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    A new implementation of the GW approximation (GWA) based on the all-electron Projector-Augmented-Wave method (PAW) is presented, where the screened Coulomb interaction is computed within the Random Phase Approximation (RPA) instead of the plasmon-pole model. Two different ways of computing the self-energy are reported. The method is used successfully to determine the quasiparticle energies of six semiconducting or insulating materials: Si, SiC, AlAs, InAs, NaH and KH. To illustrate the novelty of the method the real and imaginary part of the frequency-dependent self-energy together with the spectral function of silicon are computed. Finally, the GWA results are compared with other calculations, highlighting that all-electron GWA results can differ markedly from those based on pseudopotential approaches.Comment: 11pages,3figures, submitted to PR
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