New photosensitive EPR signals in undoped semi-insulating GaAs

Three new EPR signals labelled FR1, FR2 and FR3 have been observed in undoped as grown LEC GaAs. They are well observable only below 10K, their intensities are high and they appear only after optical excitation. Thus the defects involved are electrically active and occur in high concentrations. Tentative models for the three centers are presented. (IAF

Photo-EPR of defects in undoped semiinsulating GaAs

Electron paramagnetic resonance spectra of as-grown, semi-insulating LEC GaAs at 9 GHz and 35 GHz have revealed three high intensity signals presumably associated with acceptor type defects. The resonances appear only after optical excitation thus confirming that they originate from electrically active centers. The spectral dependence of their photoexcitation has been measured. A comparison with the photo-response of the As sub Ga antisite defect indicates a charge exchange between the As sub Ga donor and at least two of the acceptor type defects. (IAF

Identifizierung und Charakterisierung von Punktdefekten in GaAs und InP Schlussbericht

With 10 refs., 4 figs.SIGLECopy held by FIZ Karlsruhe; available from UB/TIB Hannover / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekDEGerman