Electromagnetic and small-signal modeling of an encapsulated RF-MEMS switch for D-band applications

Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich.This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively.In this work, an electromagnetic (EM) model and a small-signal (lumped-element) model of a wafer-level encapsulated (WLE) radio frequency microelectromechanical systems (RF-MEMS) switch is presented. The EM model of the WLE RF-MEMS switch is developed to estimate its RF performance. After the fabrication of the switch, the EM model is used to get accurate S-parameter simulation results. Alternative to the EM model, a small-signal model of the fabricated WLE RF-MEMS switch is developed. The developed model is integrated into a 0.13 µm SiGe BiCMOS process technology design kit for fast simulations and to predict the RF performance of the switch from a pure electrical point of view. The 0.13 µm SiGe BiCMOS embedded WLE RF-MEMS shows beyond state-of-the-art measured RF performances in D-band (110–170 GHz) and provides a high capacitance Con/Coff ratio of 11.1. The results of the both EM model and small-signal model of the switch are in very good agreement with the S-parameter measurements in D-band. The measured maximum isolation of the WLE RF-MEMS switch is 51.6 dB at 142.8 GHz with an insertion loss of 0.65 dB.EC/FP7/288531/EU/Nanostructured materials and RF-MEMS RFIC/MMIC technologies for highly adaptive and reliable RF systems/NANOTE

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Abschlussbericht zum BMBF Verbundprojekt: Kompetenznetzwerk für Nanosystemintegration : Anwendung von Nanotechnologien für energieeffiziente Sensorsysteme ; zu den Teilvorhaben: LPB - NEMS/MEMS-Elektronik-Integration für energieeffiziente Sensorknoten ; Berichtszeitraum: 1.11.2009 - 31.10.2012

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