Стандартизация в сфере менеджмента информационной безопасности

Описано сучасний стан стандартизації в сфері менеджменту інформаційної безпеки. Розглянуто вимоги до стандартів, що розробляються, типи стандартів, принципи, яких слід дотримуватись під час розроблення стандартів. Робота грунтується на матеріалах, прийнятих в підкомітеті ПК 27 «Методи захисту» об’єднаного технічного комітету ІСО/ МЕК ОТК 1 «Інформаційні технології».The article describes state of the art of the standardization in information security area. The requirements to the standards being developed, the types of standards, the principles to which it is required to follow are discussed. The contents of the article is based on the documents adopted within subcommittee 27 ”Security techniques” of the joint technical committee ISO/IEC JTC 1 “Information technology”

Reduction of dislocation density in epitaxial gan layers bij overgrowth of defect-related etch pits

Contains fulltext : 75929.pdf (publisher's version ) (Open Access

Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods

Contains fulltext : 36050.pdf (publisher's version ) (Closed access

Photoelectrochemistry and Etching of SiC: a Comparison with Si

Contains fulltext : 71911.pdf (author's version ) (Open Access)211th meeting of the ECS, 6 mei 200

Defects in wide band-gap semiconductors: selective etching and calibration by complementary methods

Item does not contain fulltextTwo approaches to defect-selective etching used for revealing and analysis of defects in GaN and SiC are described and critically evaluated. These are: (i) orthodox etching which results in formation of pits on the defect sites and (ii) electroless etching, which yields protruding etch features. The mechanisms of surface reactions that are responsible for the distinct differences in the morphology of defect-related etch features are discussed. The most frequently used etching systems for GaN and SiC and the methods of verification of their reliability in revealing different types of defects are described

Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition

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Defect-selective etching of semiconductors

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Selective photoetching and transmission electron microscopy studies of defects in heteroepitaxial GaN

Contains fulltext : 112559.pdf (publisher's version ) (Open Access

SELECTIVE ETCHING OF n-TYPE GaAs IN A CrO3-HF-H2O SYSTEM UNDER LASER ILLUMINATION

Une grande gamme de mélanges CrO3/HF en forme diluée et sous éclairement laser (λ = 6328 Å) est utile pour révéler les défauts de GaAs {100} type n. Après une profondeur d'attaque de la surface de GaAs de 0,2-0,4 µm, les stries, dislocations, fautes d'empilement et inclusion sont révélées. Ces solutions d'attaque peuvent donc être utilisées pour étudier les défauts des couches épitaxiées de GaAs. Les traits caractéristiques des figures d'attaque sont similaires à ceux obtenus avec la méthode DABL (AB dilué sous éclairement laser) mais certaines propriétés du système CrO3-HF-H2O sont avantageuses. La composition de la solution (dans de larges limites) n'est pas critique pour la révélation des défauts (bien que la cinétique d'attaque dépende de la composition), la méthode est reproductible, il n'y a pas de précipités qui se forment dans la solution, ni d'effet mémoire. Ces solutions diluées type Sirtl sous éclairement laser (DSL) ont été calibrées avec la solution AB et composées avec la méthode DABL.A wide range of CrO3/HF mixtures in diluted form and under laser illumination (λ = 6328 Å) have been found to be useful for defect revealing in n-type {100} GaAs. After removal of 0.2 - 0.4 microns from the GaAs surface, striations, dislocations, stacking faults and inclusions are revealed, so these etchants can be used to study defects in GaAs epitaxial layers. The characteristic features of the etch figures are similar to those obtained with the DABL method (diluted AB etch under laser ill.) but some properties of the CrO3-HF-H2O system are advantageous : the composition of etchants (within wide limits) is not critical for the defect revealing mode (although the kinetics of etching are composition dependent), no precipitates are formed in solution, high reproducibility of the method, no memory effect. These diluted Sirtllike etchants used with laser (DSL) were calibrated with AB-etch and compared with the DABL method