159 research outputs found

    Impact of Decision Making, Reward Management on Job Performance: Mediation of Job Satisfaction: A Case of a Private Banks in Sri Lanka

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    With the huge competition prevailing in the business world, organizations focusing more on job performance than ever before as less performed employees will lead the organizations for destruction. With this interest, organizations looking forward to recognize how job performance can be enhanced within the organization, which leads to a competitive edge. By identifying this importance, this study is focused on to investigate the impact of decision making and reward management on job performance, and to identify the mediation effect of job satisfaction on the above relationships. self administered questionnaires were used to collect the date and data were collected from 311 employees in private banks in Sri Lanka. The impact of decision making and reward management on job performance were significant and partial mediation of job satisfaction on the above relationships were found out. Thereby, this study sign the managers of the organizations to focus more on practices of the organizations to enhance the performance of the employees. Keywords: Decision Making, Job Performance, Job Satisfaction, Private Banks, Reward Management, Sri Lank

    Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures

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    We present comprehensive experimental and theoretical work on tunnel-barrier rectifiers comprising bilayer (Nb2O5/Al2O3) insulator configurations with similar (Nb/Nb) and dissimilar (Nb/Ag) metal electrodes. The electron affinity, valence band offset, and metal work function were ascertained by X-ray photoelectron spectroscopy, variable angle spectroscopic ellipsometry, and electrical measurements on fabricated reference structures. The experimental band line-up parameters were fed into a theoretical model to predict available bound states in the Nb2O5/Al2O3 quantum well and generate tunneling probability and transmittance curves under applied bias. The onset of strong resonance in the sub-V regime was found to be controlled by a work function difference of Nb/Ag electrodes in agreement with the experimental band alignment and theoretical model. A superior low-bias asymmetry of 35 at 0.1 V and a responsivity of 5 A/W at 0.25 V were observed for the Nb/4 nm Nb2O5/1 nm Al2O3/Ag structure, sufficient to achieve a rectification of over 90% of the input alternate current terahertz signal in a rectenna device

    Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature

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    A study into the optimal deposition temperature for ultra-thin La2O3/Ge and Y2O3/Ge gate stacks has been conducted in this paper with the aim to tailor the interfacial layer for effective passivation of the Ge interface. A detailed comparison between the two lanthanide oxides (La2O3 and Y2O3) in terms of band line-up, interfacial features, and reactivity to Ge using medium energy ion scattering, vacuum ultra-violet variable angle spectroscopic ellipsometry (VUV-VASE), X-ray photoelectron spectroscopy, and X-ray diffraction is shown. La2O3 has been found to be more reactive to Ge than Y2O3, forming LaGeOx and a Ge sub-oxide at the interface for all deposition temperature studied, in the range from 44 °C to 400 °C. In contrast, Y2O3/Ge deposited at 400 °C allows for an ultra-thin GeO2 layer at the interface, which can be eliminated during annealing at temperatures higher than 525 °C leaving a pristine YGeOx/Ge interface. The Y2O3/Ge gate stack deposited at lower temperature shows a sub-band gap absorption feature fitted to an Urbach tail of energy 1.1 eV. The latter correlates to a sub-stoichiometric germanium oxide layer at the interface. The optical band gap for the Y2O3/Ge stacks has been estimated to be 5.7 ± 0.1 eV from Tauc-Lorentz modelling of VUV-VASE experimental data. For the optimal deposition temperature (400 °C), the Y2O3/Ge stack exhibits a higher conduction band offset (>2.3 eV) than the La2O3/Ge (∼2 eV), has a larger band gap (by about 0.3 eV), a germanium sub-oxide free interface, and leakage current (∼10−7 A/cm2 at 1 V) five orders of magnitude lower than the respective La2O3/Ge stack. Our study strongly points to the superiority of the Y2O3/Ge system for germanium interface engineering to achieve high performance Ge Complementary Metal Oxide Semiconductor technology

    E-government adoption: A cultural comparison

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    This is the author's accepted manuscript. The final published article is available from the link below. Copyright @ Springer Science + Business Media, LLC 2008.E-government diffusion is an international phenomenon. This study compares e-government adoption in the U.K. to adoption in the U.S. In particular, this study seeks to determine if the same factors are salient in both countries. Several studies have explored citizen acceptance of e-government services in the U.S. However, few studies have explored this phenomenon in the U.K. To identify the similarities and differences between the U.K. and the U.S. a survey is conducted in the U.K. and the findings are compared to the literature that investigates diffusion in the U.S. This study proposes a model of e-government adoption in the U.K. based on salient factors in the U.S. A survey is administered to 260 citizens in London to assess the importance of relative advantage, trust and the digital divide on intention to use e-government. The results of binary logistic regression indicate that there are cultural differences in e-government adoption in the U.K. and the U.S. The results indicate that of the prevailing adoption constructs, relative advantage and trust are pertinent in both the U.S. and the U.K., while ICT adoption barriers such as access and skill may vary by culture. Implications for research and practice are discussed

    Lichen floral studies on Artocarpus heterophyllus Lam. tree trunk in different eco - regions of Sri Lanka

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    Information on lichen flora in Sri Lanka is scarce. Therefore a study was carried out to investigatelichens growing on a tree species common to all five eco regions (Montane, Wet, Intermediate, Aridand Dry zone) of Sri Lanka. The common tree species found in all regions was Artocarpusheterophyllus Lam. (jak). Lichen flora found on bark of jak trees between 1.5 m and 2 rn above theground level was studied. Six hundred and sixty three specimens from hundred and twenty trees werestudied. Twenty five genera and thirteen families were found among them. Twenty genera werefound to be crustose and five were folioses. No fruticose lichen was found in any region. Of allidentified lichens 40% were belonged to the family Graphidaceae and it was the most frequentlyfound lichen family in all regions and the second highest (17%) was belonged to family Phyciaceae.The most frequently found genus was Graphis.Heterodermia and Pertusaria were found only in montane zone while Leptogium was found only inlowland wet zone. Thelotrema. Ocellularia. Myriotrema and Chrysothrix were found only inIntermediate zonc. Parntelia was restricted to wet zone while Dirinaria, Dimerella and Porinawere restricted to dry zone, Differences in distribution of some of these lichens can be explainedwith rain fall, temperature and humidity.

    Atomic-layer deposited thulium oxide as a passivation layer on germanium

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    A comprehensive study of atomic-layer deposited thulium oxide (Tm2O3) on germanium has been conducted using x-ray photoelectron spectroscopy (XPS), vacuum ultra-violet variable angle spectroscopic ellipsometry, high-resolution transmission electron microscopy (HRTEM), and electron energy-loss spectroscopy. The valence band offset is found to be 3.05 ± 0.2 eV for Tm2O3/p-Ge from the Tm 4d centroid and Ge 3p3/2 charge-corrected XPS core-level spectra taken at different sputtering times of a single bulk thulium oxide sample. A negligible downward band bending of ∼0.12 eV is observed during progressive differential charging of Tm 4d peaks. The optical band gap is estimated from the absorption edge and found to be 5.77 eV with an apparent Urbach tail signifying band gap tailing at ∼5.3 eV. The latter has been correlated to HRTEM and electron diffraction results corroborating the polycrystalline nature of the Tm2O3 films. The Tm2O3/Ge interface is found to be rather atomically abrupt with sub-nanometer thickness. In addition, the band line-up of reference GeO2/n-Ge stacks obtained by thermal oxidation has been discussed and derived. The observed low reactivity of thulium oxide on germanium as well as the high effective barriers for holes (∼3 eV) and electrons (∼2 eV) identify Tm2O3 as a strong contender for interfacial layer engineering in future generations of scaled high-κ gate stacks on Ge

    Принципи та цілі логістичного обслуговування в контексті підвищення рівня конкурентоспроможності підприємства

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    In this article, we examine the digitalised emotional campaigning of one of Australia’s peak animal welfare body, Animals Australia, focusing on their most effective digital strategies associated with their campaigns against factory farming. Our broader interest lies with sounding out the affective affordances of the technologies informing such activist work; technologies of affect in a very significant sense. This discussion comprises three parts. First, we unpack the context for the problematic faced by animal and environmental activisms: neoliberalism, showing how neoliberal assumptions constrain such activisms to emotional appeals and denounce them for such strategising. Second, we sound out some of the affordances of digital media technologies for affectively oriented activisms; and finally, we delve into some of Animals Australia’s digital campaigning with regard to issues of factory farming in order to show the efficacy of such affectively oriented mediated strategising for the forming of new relations with factory farm. © 2017, © The Author(s) 2017

    Interface Engineering Routes for a Future CMOS Ge-based Technology

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    We present an overview study of two germanium interface engineering routes, firstly a germanate formation via La2O3 and Y2O3, and secondly a barrier layer approach using Al2O3 and Tm2O3. The interfacial composition, uniformity, thickness, band gap, crystallinity, absorption features and valence band offset are determined using X-ray photoelectron spectroscopy, ultra violet variable angle spectroscopic ellipsometry, and high resolution transmission electron microscopy. The correlation of these results with electrical characterization data make a case for Ge interface engineering with rare-earth inclusion as a viable route to achieve high performance Ge CMOS.</jats:p

    Case report: The management of advanced oral cancer in a Jehovah's Witness using the Ultracision Harmonic Scalpel

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    We present the first case of a head and neck oncological procedure accomplished in a Jehovah's Witness using the Ultracision Harmonic Scalpel (Ethicon, Cincinnati, OH). Jehovah's Witnesses present a serious challenge to the head and neck cancer surgeon due to their refusal to accept transfusion of any blood products. However, our experience reinforces the view that surgical management of head and neck cancer is possible in these patients. We show the Harmonic Scalpel, an ultrasonic tissue dissector, to be a useful surgical tool in obviating the need for blood transfusion. Preoperative optimisation, intra-operative surgical and anaesthetic techniques are also fully discussed
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