Physical and Electrical Performance Limits of High-Speed SiGeC HBTs-Part II: Lateral Scaling

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TCAD simulation and development within the European DOTFIVE project on 500GHz SiGe:C HBT's

International audienceThe TCAD infrastructure developed within the DOTFIVE project is described. The hierarchical TCAD platform includes different Boltzmann equation solvers as well as simulators based on the widely used drift-diffusion and hydrodynamic transport models. In the latter case, accurate physical models were generated. The TCAD platform is used to explore the physics of extremely scaled devices and investigate new device concepts and architectures

Si/SiGe:C and InP/GaAsSb heterojunction bipolar transistors for THz applications

This paper presents Si/SiGe:C and InP/GaAsSb HBTs which feature specific assets to address submillimeter-wave and THz applications. Process and modeling status and challenges are reviewed. The specific topics of thermal and substrate effects, reliability, and HF measurements are also discussed