AlN/GaN-based MOS-HEMT technology: processing and device results

Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al<sub>2</sub>O<sub>3</sub> as a gate dielectric and surface passivation for devices. Significant improvement in device performance was observed using the following techniques: (1) Ohmic contact optimisation using Al wet etch prior to Ohmic metal deposition and (2) mesa sidewall passivation. DC and RF performance of the fabricated devices will be presented and discussed in this paper

A liénard oscillator resonant tunnelling diode-laser diode hybrid integrated circuit: model and experiment

We report on a hybrid optoelectronic integrated circuit based on a resonant tunnelling diode driving an optical communications laser diode. This circuit can act as a voltage controlled oscillator with optical and electrical outputs. We show that the oscillator operation can be described by Liénard's equation, a second order nonlinear differential equation, which is a generalization of the Van der Pol equation. This treatment gives considerable insight into the potential of a monolithic version of the circuit for optical communication functions including clock recovery and chaotic source applications

Resonant tunneling diode oscillators for optical communications

The ability to use resonant tunneling diodes (RTDs) as both transmitters and receivers is an emerging topic, especially with regards to wireless communications. Successful data transmission has been achieved using electronic RTDs with carrier frequencies exceeding 0.3 THz. Specific optical-based RTDs, which act as photodetectors, have been developed by adjusting the device structure to include a light absorption layer and small optical windows on top of the device to allow direct optical access. This also allows the optical signal to directly modulate the RTD oscillation. Both types of RTD oscillators will allow for seamless integration of high frequency radio and optical fiber networks.European Union's Horizon research and innovation programme [645369

Optical Characteristics Analysis of Resonant Tunneling Diode Photodiode Based Oscillators

This paper represents the experimental results of optical modulation characteristics of a resonant tunneling diode-photodiode (RTD-PD) device and novel microwave oscillators employing such RTD-PD. Different from a pure electronic RTD oscillator, the RTD-PDs in this work contain photoconductive layers which make it able to operate in optical conditions. A beam of intensity modulated light with a wavelength of 1310 nm was sent to the free running oscillator via an optical fiber whilst the RTD device was biased in the oscillation condition, and the corresponding electrical data can be extracted from the output port of the oscillator. A square wave signal at data rates up to 10 Gbit/s, and a pseudo random binary sequence (PRBS) signal with a data rate of 100 Mbit/s were preliminarily implemented for modulation

Building an end user focused THz based ultra high bandwidth wireless access network: The TERAPOD approach

The TERAPOD project aims to investigate and demonstrate the feasibility of ultra high bandwidth wireless access networks operating in the Terahertz (THz) band. The proposed TERAPOD THz communication system will be developed, driven by end user usage scenario requirements and will be demonstrated within a first adopter operational setting of a Data Centre. In this article, we define the full communications stack approach that will be taken in TERAPOD, highlighting the specific challenges and aimed innovations that are targeted

Optical direct intensity modulation of a 79GHz resonant tunneling diode-photodetector oscillator

We report on the direct intensity modulation characteristics of a high-speed resonant tunneling diode-photodetector (RTD-PD) with an oscillation frequency of 79 GHz. This work demonstrates both electrical and optical modulation and shows that RTD-PD oscillators can be utilized as versatile optoelectronic/radio interfaces. This is the first demonstration of optical modulation of an RF carrier using integrated RTD-PD oscillators at microwave frequencies