First principles design of divacancy defected graphene nanoribbon based rectifying and negative differential resistance device

We have elaborately studied the electronic structure of 555-777 divacancy (DV) defected armchair edged graphene nanoribbon (AGNR) and transport properties of AGNR based two-terminal device constructed with one defected electrode and one N doped electrode, by using density functional theory and non-equilibrium Green's function based approach. The introduction of 555-777 DV defect into AGNRs, results in a shifting of the {\pi} and {\pi}* bands towards the higher energy value which indicates a shifting of the Fermi level towards the lower energy. Formation of a potential barrier, very similar to that of conventional p-n junction, has been observed across the junction of defected and N doped AGNR. The prominent asymmetric feature of the current in the positive and negative bias indicates the diode like property of the device with high rectifying efficiency within wide range of bias voltages. The device also shows robust negative differential resistance (NDR) with very high peak-to-valley ratio. The analysis of the shifting of the energy states of the electrodes and the modification of the transmission function with applied bias provides an insight into the nonlinearity and asymmetry observed in the I-V characteristics. Variation of the transport properties on the width of the ribbon has also been discussed.Comment: 28 Pages, 12 Figures and 1 tabl

Newtype single-layer magnetic semiconductor in transition-metal dichalcogenides VX 2 (X = S, Se and Te)

We present a newtype 2-dimensional (2D) magnetic semiconductor based on transition-metal dichalcogenides VX2 (X = S, Se and Te) via first-principles calculations. The obtained indirect band gaps of monolayer VS2, VSe2, and VTe2 given from the generalized gradient approximation (GGA) are respectively 0.05, 0.22, and 0.20 eV, all with integer magnetic moments of 1.0 μB. The GGA plus on-site Coulomb interaction U (GGA + U) enhances the exchange splittings and raises the energy gap up to 0.38~0.65 eV. By adopting the GW approximation, we obtain converged G0W0 gaps of 1.3, 1.2, and 0.7 eV for VS2, VSe2, and VTe2 monolayers, respectively. They agree very well with our calculated HSE gaps of 1.1, 1.2, and 0.6 eV, respectively. The gap sizes as well as the metal-insulator transitions are tunable by applying the in-plane strain and/or changing the number of stacking layers. The Monte Carlo simulations illustrate very high Curie-temperatures of 292, 472, and 553 K for VS2, VSe2, and VTe2 monolayers, respectively. They are nearly or well beyond the room temperature. Combining the semiconducting energy gap, the 100% spin polarized valence and conduction bands, the room temperature TC, and the in-plane magnetic anisotropy together in a single layer VX2, this newtype 2D magnetic semiconductor shows great potential in future spintronics

Substrate induced modulation of electronic, magnetic and chemical properties of MoSe2 monolayer

Monolayer of MoSe2, having a typical direct band gap of ∼1.5 eV, is a promising material for optoelectronic and solar cell applications. When this 2D semiconductor is supported on transition metal substrates, such as Ni(111) and Cu(111), its electronic structure gets modulated. First principles density functional investigation shows the appearance of de-localized mid-gap states in the density of states. The work function of the semiconductor overlayer gets modified considerably, indicating n-type doping caused by the metal contacts. The charge transfer across the metal-semiconductor junction also significantly enhances the chemical reactivity of the MoSe2 overlayer, as observed by Hydrogen absorption. Furthermore, for Ni contact, there is a signature of induced magnetism in MoSe2 monolayer

Heteroepitaxial Junction in Au-ZnSe Nanostructure: Experiment versus First-Principle Simulation

Composing together the experimental as well as the simulated results, we demonstrate here the atomic placements and the electronic structure at the epitaxial junction of a solution-processed heteronanostructure Au-ZnSe. Despite the large lattice mismatch (∼32%) between fcc Au and zinc-blende structured ZnSe, the heterostructures are formed via coincidence site epitaxy, which appears periodically because of the arrangements of their proper unit cell placements at the junction. This reduces the interface energy and drives the formation of such heteronanostructures. Details of the physical processes involved in the formation of these nanostructures have been discussed in this letter, and epitaxy at the heterojunction is strongly supported by HRTEM measurement and DFT calculation. This material has the possibility of plasmon-exciton coupling and therefore might be a futuristic material for utilizations in catalysis, nanoelectronics, and other related applications