Analysis and Design of Channel Estimation in Multicell Multiuser MIMO OFDM Systems

This paper investigates the uplink transmission in multicell multiuser multiple-input multiple-output (MIMO) orthogonal frequency-division multiplexing (OFDM) systems. The system model considers imperfect channel estimation, pilot contamination (PC), and multicarrier and multipath channels. Analytical expressions are first presented on the mean square error (MSE) of two classical channel estimation algorithms [i.e., least squares (LS) and minimum mean square error (MMSE)] in the presence of PC. Then, a simple H-infinity (H-inf) channel estimation approach is proposed to have good suppression to PC. This approach exploits the space-alternating generalized expectation–maximization (SAGE) iterative process to decompose the multicell multiuser MIMO (MU-MIMO) problem into a series of single-cell single-user single-input single-output (SISO) problems, which reduces the complexity significantly. According to the analytic results given herein, increasing the number of pilot subcarriers cannot mitigate PC, and a clue for suppressing PC is obtained. It is shown from the results that the H-inf has better suppression capability to PC than classical estimation algorithms. Its performance is close to that of the optimal MMSE as the length of channel impulse response (CIR) is increased. By using the SAGE process, the performance of the H-inf does not degrade when the number of antennas is large at the base station (BS)

Charge Trap Memory Based on Few-Layered Black Phosphorus

Atomically thin layered two-dimensional materials, including transition-metal dichacolgenide (TMDC) and black phosphorus (BP), (1) have been receiving much attention, because of their promising physical properties and potential applications in flexible and transparent electronic devices . Here, for the first time we show non-volatile chargetrap memory devices, based on field-effect transistors with large hysteresis, consisting of a few-layer black phosphorus channel and a three dimensional (3D) Al2O3 /HfO2 /Al2O3 charge-trap gate stack. An unprecedented memory window exceeding 12 V is observed, due to the extraordinary trapping ability of HfO2. The device shows a high endurance and a stable retention of ?25% charge loss after 10 years, even drastically lower than reported MoS2 flash memory. The high program/erase current ratio, large memory window, stable retention and high on/off current ratio, provide a promising route towards the flexible and transparent memory devices utilising atomically thin two-dimensional materials. The combination of 2D materials with traditional high-k charge-trap gate stacks opens up an exciting field of nonvolatile memory devices.Comment: 16 pages, 10 figures, 1 table. arXiv admin note: substantial text overlap with arXiv:1407.7432 by other authors; text overlap with arXiv:1505.04859 by other authors without attributio