Phonon plasmon interaction in ternary group-III-nitrides

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 101, 041909 (2012) and may be found at https://doi.org/10.1063/1.4739415.Phonon-plasmon-coupling in the ternary group-III-nitrides InGaN and AlGaN is investigated experimentally and theoretically. Based on the observation of broadening and shifting of the A1(LO) mode in AlGaN upon Si-doping, a lineshape analysis was performed to determine the carrier concentration. The results obtained by this method are in excellent agreement to those from Hall measurements, confirming the validity of the employed model. Finally, neglecting phonon and plasmon damping, the Raman shift of the A1(LO) mode in dependence of the carrier concentration for AlGaN and InGaN is calculated. This enables a fast and contactless determination of carrier concentrations in the future.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

Resonant vibrations, peak broadening and noise in single molecule contacts: beyond the resonant tunnelling picture

We carry out experiments on single-molecule junctions at low temperatures, using the mechanically controlled break junction technique. Analyzing the results received with more than ten different molecules the nature of the first peak in the differential conductance spectra is elucidated. We observe an electronic transition with a vibronic fine structure, which is most frequently smeared out and forms a broad peak. In the usual parameter range we find strong indications that additionally fluctuations become active even at low temperatures. We conclude that the electrical field feeds instabilities, which are triggered by the onset of current. This is underscored by noise measurements that show strong anomalies at the onset of charge transport

The new Felsenkeller 5 MV underground accelerator

The field of nuclear astrophysics is devoted to the study of the creation of the chemical elements. By nature, it is deeply intertwined with the physics of the Sun. The nuclear reactions of the proton-proton cycle of hydrogen burning, including the 3He({\alpha},{\gamma})7Be reaction, provide the necessary nuclear energy to prevent the gravitational collapse of the Sun and give rise to the by now well-studied pp, 7Be, and 8B solar neutrinos. The not yet measured flux of 13N, 15O, and 17F neutrinos from the carbon-nitrogen-oxygen cycle is affected in rate by the 14N(p,{\gamma})15O reaction and in emission profile by the 12C(p,{\gamma})13N reaction. The nucleosynthetic output of the subsequent phase in stellar evolution, helium burning, is controlled by the 12C({\alpha},{\gamma})16O reaction. In order to properly interpret the existing and upcoming solar neutrino data, precise nuclear physics information is needed. For nuclear reactions between light, stable nuclei, the best available technique are experiments with small ion accelerators in underground, low-background settings. The pioneering work in this regard has been done by the LUNA collaboration at Gran Sasso/Italy, using a 0.4 MV accelerator. The present contribution reports on a higher-energy, 5.0 MV, underground accelerator in the Felsenkeller underground site in Dresden/Germany. Results from {\gamma}-ray, neutron, and muon background measurements in the Felsenkeller underground site in Dresden, Germany, show that the background conditions are satisfactory for nuclear astrophysics purposes. The accelerator is in the commissioning phase and will provide intense, up to 50{\mu}A, beams of 1H+, 4He+ , and 12C+ ions, enabling research on astrophysically relevant nuclear reactions with unprecedented sensitivity.Comment: Submitted to the Proceedings of the 5th International Solar Neutrino Conference, Dresden/Germany, 11-14 June 2018, to appear on World Scientific -- updated version (Figure 2 and relevant discussion updated, co-author A. Domula added

Decay dynamics of excitonic polarons in InAs/GaAs quantum dots

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 110, 074303 (2011) and may be found at https://doi.org/10.1063/1.3639310.We present time-resolved studies of the exciton-phonon interaction in self-assembled InAs/GaAs quantum dots. Different scattering and luminescence processes were investigated by time-resolved spectroscopy exciting resonantly into the quantum dot’s electronic structure. By studying the characteristic decay times of the ground state and of several phonon-assisted recombinations we were able to distinguish a resonant Raman process from a phonon-assisted photoluminescence process which are always simultaneously present and can interfere with each other. While lifetimes under 30 ps were observed for the coherent Raman process, the incoherent phonon-assisted recombination exhibited typical lifetimes of around 1 ns independently of the excitation energy. We conclude that under resonant excitation the dominant radiative recombination process in this system always involves an electronic state of the ground state of the quantum dot’s electronic structure. Combining temperature-dependent and time-resolved measurements we show that a weak phonon-bottleneck is present in the low temperature regime (< 130 K), while it disappears for higher temperatures.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, BauelementeDFG, 53182490, EXC 314: Unifying Concepts in Catalysi

Tuning the Emission Directionality of Stacked Quantum Dots

The emission directionality of stacks of coupled quantum dots (QDs) is investigated within the framework of 8-band k·p-theory including strain and strain-induced piezoelectricity up to second order. Using an artificial cuboidal QD, we show that the degree of radiation anisotropy can be tuned from −33% to nearly +60% via the structure’s vertical aspect ratio. We then demonstrate that these findings can be transferred to stacked InGaAs QDs whose emission directionality is tailored (i) via the interdot coupling strength given by the separating barrier width and (ii) the number of stacked QDs. Our results enable the design and optimization of top and edge emitters based on stacked QDs.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

Li-doped ZnO nanorods with single-crystal quality - non-classical crystallization and self-assembly into mesoporous materials

Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich.This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively.The benefits and promise of nanoscale dimensions for the properties of (ceramic) semiconductors are widely known. 1-D nanostructures in particular have proven to be of extraordinary relevance due to their applicability in future electronic and optoelectronic devices. Key to successful technological implementation of semiconductor nanostructures is the control of their electronic properties via doping. Despite its tremendous importance, precise chemical doping of defined nano-objects has been addressed rarely so far. Frequent problems are the creation of secondary defects and related undesired property changes by incorporation of hetero-elements, and the difficulty in ensuring a uniform and precise positioning of the dopant in the nanocrystal lattice. Here, we present the synthesis of Li-doped zinc oxide nanorods, which possess excellent (single-crystal) quality. The method is based on a novel non-classical crystallization mechanism, comprising an unusually oriented disassembly step. Afterwards, the nanorods are incorporated into mesoporous layers using colloidal self-assembly. Proof-of-principle gas sensing measurements with these novel materials demonstrate the beneficial role of Li-doping, indicating not only better conductivity but also the occurrence of catalytic effects

Binding of ATP to UAP56 is necessary for mRNA export

The major-histocompatibility-complex protein UAP56 (BAT1) is a DEAD-box helicase that is deposited on mRNA during splicing. UAP56 is retained on spliced mRNA in an exon junction complex (EJC) or, alternatively, with the TREX complex at the 5\u27 end, where it might facilitate the export of the spliced mRNA to the cytoplasm. Using confocal microscopy, UAP56 was found to be concentrated in RNA-splicing speckled domains of nuclei but was also enriched in adjacent nuclear regions, sites at which most mRNA transcription and splicing occur. At speckled domains, UAP56 was in complexes with the RNA-splicing and -export protein SRm160, and, as measured by FRAP, was in a dynamic binding equilibrium. The application of an in vitro FRAP assay, in which fluorescent nuclear proteins are photobleached in digitonin-extracted cells, revealed that the equilibrium binding of UAP56 in complexes at speckled domains was directly regulated by ATP binding. This was confirmed using a point mutant of UAP56 that did not bind ATP. Point mutation of UAP56 to eliminate ATP binding did not affect RNA splicing, but strongly inhibited the export of mRNA to the cytoplasm

How to measure patent thickets – a novel approach

The existing literature identifies patent thickets indirectly. In this paper we propose a novel measure based on patent citations which allows us to measure the density of patent thickets directly. We discuss the algorithm which generates the measure and present descriptive results validating it. Moreover, we identify technology areas which are particularly impacted by patent thickets

A polynomial bound for untangling geometric planar graphs

To untangle a geometric graph means to move some of the vertices so that the resulting geometric graph has no crossings. Pach and Tardos [Discrete Comput. Geom., 2002] asked if every n-vertex geometric planar graph can be untangled while keeping at least n^\epsilon vertices fixed. We answer this question in the affirmative with \epsilon=1/4. The previous best known bound was \Omega((\log n / \log\log n)^{1/2}). We also consider untangling geometric trees. It is known that every n-vertex geometric tree can be untangled while keeping at least (n/3)^{1/2} vertices fixed, while the best upper bound was O(n\log n)^{2/3}. We answer a question of Spillner and Wolff [arXiv:0709.0170 2007] by closing this gap for untangling trees. In particular, we show that for infinitely many values of n, there is an n-vertex geometric tree that cannot be untangled while keeping more than 3(n^{1/2}-1) vertices fixed. Moreover, we improve the lower bound to (n/2)^{1/2}.Comment: 14 pages, 7 figure