15 research outputs found
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Bounds for creep in thick spherical pressure vessels
The creep of a hollow sphere subject to constant internal pressure is considered. A method is derived for obtining a priori upper and lower bounds for the displacement of any point in the spherical body at any time. (TFP
Ionization degree of the electron-hole plasma in semiconductor quantum wells
The degree of ionization of a nondegenerate two-dimensional electron-hole
plasma is calculated using the modified law of mass action, which takes into
account all bound and unbound states in a screened Coulomb potential.
Application of the variable phase method to this potential allows us to treat
scattering and bound states on the same footing. Inclusion of the scattering
states leads to a strong deviation from the standard law of mass action. A
qualitative difference between mid- and wide-gap semiconductors is
demonstrated. For wide-gap semiconductors at room temperature, when the bare
exciton binding energy is of the order of T, the equilibrium consists of an
almost equal mixture of correlated electron-hole pairs and uncorrelated free
carriers.Comment: 22 pages, 6 figure
Tratamento de águas residuárias de suinocultura em sistemas alagados construídos, com Chrysopogon zizanioides e Polygonum punctatum cultivadas em leito de argila expandida
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