Measurement of the proton and deuteron structure functions, F2p and F2d, and of the ratio sigma(L)/sigma(T)

The muon-proton and muon-deuteron inclusive deep inelastic scattering cross sections were measured in the kinematic range 0.002 < x < 0.60 and 0.5 < Q2 < 75 GeV2 at incident muon energies of 90, 120, 200 and 280 GeV. These results are based on the full data set collected by the New Muon Collaboration, including the data taken with a small angle trigger. The extracted values of the structure functions F2p and F2d are in good agreement with those from other experiments. The data cover a sufficient range of y to allow the determination of the ratio of the longitudinally to transversely polarised virtual photon absorption cross sections, R= sigma(L)/sigma(T), for 0.002 < x < 0.12 . The values of R are compatible with a perturbative QCD prediction; they agree with earlier measurements and extend to smaller x.Comment: In this replacement the erroneously quoted R values in tables 3-6 for x>0.12, and R1990 values in tables 5-6 for all x, have been corrected, and the cross sections in tables 3-4 have been adapted. Everything else, including the structure functions F2, remained unchanged. 22 pages, LateX, including figures, with two .sty files, and three separate f2tab.tex files for the F2-tables. Accepted for publication in Nucl.Phys.B 199

Accurate Measurement of F2d/F2p and Rd-Rp

Results are presented for F2d/F2p and Rd-Rp from simultaneous measurements of deep inelastic muon scattering on hydrogen and deuterium targets, at 90, 120, 200 and 280 GeV. The difference Rd-Rp, determined in the range 0.002<x<0.4 at an average Q^2 of 5 GeV^2, is compatible with zero. The x and Q^2 dependence of F2d/F2p was measured in the kinematic range 0.001<x<0.8 and 0.1<Q^2<145 GeV^2 with small statistical and systematic errors. For x>0.1 the ratio decreases with Q^2.Comment: 29 pages, LateX, including figures, prepared with uufiles, arriving with .sty files as used, figures .eps files and a table .tex file. Accepted for publication in Nucl.Phys.B 199

Role of nitrogen in carrier confinement potential engineering and optical properties of GaAs-based quantum wells heterostructures

In this work, the authors present the results of optical characterization of GaAs-based multiple quantum well heterostructures, together with energy band structure analysis. The optical properties were investigated by applying photoluminescence spectroscopy. Structures with GaInNAs, GaInAs and GaNAs multiple quantum wells emitting around 1 μm, grown by atmospheric pressure metalorganic vapor phase epitaxy, were compared in this work. The role of nitrogen in quantum well carriers confinement potential was analysed. The photoluminescence intensities of the samples were correlated with the analysis of energy band structures and the overlaps of the carriers’ wave functions. In addition, the main carrier activation energies were estimated based on photoluminescence temperature dependence and the Arrhenius plots analysis. It was deduced that the thermal photoluminescence decay is most probably related to the escape of electrons whereas the holes, independently of the potential well depth, are additionally confined by the local inhomogeneities or by the Coulomb interaction with the confined electrons

Technology and properties of low-pressure metalorganic vapour phase epitaxy grown InGaAs/AlInAs superlattice for quantum cascade laser applications

Quantum cascade laser is one of the most sophisticated semiconductor devices. The active region of the quantum cascade laser consists of hundreds thin layers, thus the deposition precision is the most crucial. The main technique for the fabrication of quantum cascade laser structure is molecular beam epitaxy, however, the prevalence of metalorganic vapour phase epitaxy techniques in the fabrication of semiconductor structures causes a perpetual work on the improvement production of the entire quantum cascade laser structure by the metalorganic vapour phase epitaxy. The paper presents technological aspects connected with the metalorganic vapour phase epitaxy growth of InGaAs/AlInAs low-dimensional structures for quantum cascade laser active region emitting ~9.6 μm radiation. Epitaxial growth of superlattice made of InGaAs/AlInAs lattice matched to InP was conducted at the AIXTRON 3x2″ FT system. Optical and structural properties of such heterostructures were characterised by means of high resolution X-ray diffraction, photoluminescence, contactless electroreflectance and scanning electron microscope techniques. Epitaxial growth and possible solutions of structure improvements are discussed

Polarity Related Problems in Growth of GaN Homoepitaxial Layers

Homoepitaxial layers of GaN were grown by metalorganic chemical vapour deposition on single crystals obtained by high-pressure, high-temperature technology. For each metalorganic chemical vapour deposition run, four samples were placed, (00.1) and (00.1̲) faces of the Mg-doped insulating and undoped highly-conductive substrates. The layers were examined using X-ray diffraction, photoluminescence and far-infrared reflectivity. It was found that the (00.1̲) easier incorporates donors resulting in higher free-electron concentrations in the layers grown on these sides of the crystals, both, undoped and Mg-doped