Emergence of skew distributions in controlled growth processes

Starting from a master equation, we derive the evolution equation for the size distribution of elements in an evolving system, where each element can grow, divide into two, and produce new elements. We then probe general solutions of the evolution quation, to obtain such skew distributions as power-law, log-normal, and Weibull distributions, depending on the growth or division and production. Specifically, repeated production of elements of uniform size leads to power-law distributions, whereas production of elements with the size distributed according to the current distribution as well as no production of new elements results in log-normal distributions. Finally, division into two, or binary fission, bears Weibull distributions. Numerical simulations are also carried out, confirming the validity of the obtained solutions.Comment: 9 pages, 3 figure

Pressure-induced and Composition-induced Structural Quantum Phase Transition in the Cubic Superconductor (Sr/Ca)_3Ir_4Sn_{13}

We show that the quasi-skutterudite superconductor Sr_3Ir_4Sn_{13} undergoes a structural transition from a simple cubic parent structure, the I-phase, to a superlattice variant, the I'-phase, which has a lattice parameter twice that of the high temperature phase. We argue that the superlattice distortion is associated with a charge density wave transition of the conduction electron system and demonstrate that the superlattice transition temperature T* can be suppressed to zero by combining chemical and physical pressure. This enables the first comprehensive investigation of a superlattice quantum phase transition and its interplay with superconductivity in a cubic charge density wave system.Comment: 4 figures, 5 pages (excluding supplementary material). To be published in Phys. Rev. Let

Correlated multiplexity and connectivity of multiplex random networks

Nodes in a complex networked system often engage in more than one type of interactions among them; they form a multiplex network with multiple types of links. In real-world complex systems, a node's degree for one type of links and that for the other are not randomly distributed but correlated, which we term correlated multiplexity. In this paper we study a simple model of multiplex random networks and demonstrate that the correlated multiplexity can drastically affect the properties of giant component in the network. Specifically, when the degrees of a node for different interactions in a duplex Erdos-Renyi network are maximally correlated, the network contains the giant component for any nonzero link densities. In contrast, when the degrees of a node are maximally anti-correlated, the emergence of giant component is significantly delayed, yet the entire network becomes connected into a single component at a finite link density. We also discuss the mixing patterns and the cases with imperfect correlated multiplexity.Comment: Revised version, 12 pages, 6 figure

Chemical Pressure and Physical Pressure in BaFe_2(As_{1-x}P_{x})_2

Measurements of the superconducting transition temperature, T_c, under hydrostatic pressure via bulk AC susceptibility were carried out on several concentrations of phosphorous substitution in BaFe_2(As_{1-x}P_x)_2. The pressure dependence of unsubstituted BaFe_2As_2, phosphorous concentration dependence of BaFe_2(As_{1-x}P_x)_2, as well as the pressure dependence of BaFe_2(As_{1-x}P_x)_2 all point towards an identical maximum T_c of 31 K. This demonstrates that phosphorous substitution and physical pressure result in similar superconducting phase diagrams, and that phosphorous substitution does not induce substantial impurity scattering.Comment: 5 pages, 4 figures, to be published in Journal of the Physical Society of Japa

Influence of Channel Layer Thickness on the Electrical Performances of Inkjet-Printed In-Ga-Zn Oxide Thin-Film Transistors

Cataloged from PDF version of article.Inkjet-printed In-Ga-Zn oxide (IGZO) thin-film transistors (TFTs) with bottom-gate bottom-contact device architecture are studied in this paper. The impact of the IGZO film thickness on the performance of TFTs is investigated. The threshold voltage, field-effect mobility, on and off drain current, and subthreshold swing are strongly affected by the thickness of the IGZO film. With the increase in film thickness, the threshold voltage shifted from positive to negative, which is related to the depletion layer formed by the oxygen absorbed on the surface. The field-effect mobility is affected by the film surface roughness, which is thickness dependent. Our results show that there is an optimum IGZO thickness, which ensures the best TFT electrical performance. The best result is from a 55-nm-thick IGZO TFT, which showed a field-effect mobility in the saturation region of 1.41 cm(2)/V . s, a threshold voltage of 1 V, a drain current on/off ratio of approximately 4.3 x 10(7), a subthreshold swing of 384 mV/dec, and an off-current level lower than 1 pA

Supergravity loop contributions to brane world supersymmetry breaking

We compute the supergravity loop contributions to the visible sector scalar masses in the simplest 5D `brane-world' model. Supersymmetry is assumed to be broken away from the visible brane and the contributions are UV finite due to 5D locality. We perform the calculation with N = 1 supergraphs, using a formulation of 5D supergravity in terms of N = 1 superfields. We compute contributions to the 4D effective action that determine the visible scalar masses, and we find that the mass-squared terms are negative.Comment: 12 pages, LaTeX 2