Flight tests of Viking parachute system in three Mach number regimes. 1: Vehicle description, test operations, and performance

Flight qualifications for parachutes were tested on full-scale simulated Viking spacecraft at entry conditions for the Viking 1975 mission to Mars. The vehicle was carried to an altitude of 36.6 km for the supersonic and transonic tests by a 980.000 cu m balloon. The vehicles were released and propelled to test conditions with rocket engines. A 117,940 cu m balloon carried the test vehicle to an altitude of 27.5 km and the conditions for the subsonic tests were achieved in free fall. Aeroshell separation occurred on all test vehicles from 8 to 14 seconds after parachute deployment. This report describes: (1) the test vehicle; (2) methods used to insure that the test conditions were achieved; and (3) the balloon system design and operations. The report also presents the performance data from onboard and ground based instruments and the results from a statistical trajectory program which gives a continuous history of test-vehicle motions

Quantum Transport in a Nanosize Silicon-on-Insulator Metal-Oxide-Semiconductor

An approach is developed for the determination of the current flowing through a nanosize silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET). The quantum mechanical features of the electron transport are extracted from the numerical solution of the quantum Liouville equation in the Wigner function representation. Accounting for electron scattering due to ionized impurities, acoustic phonons and surface roughness at the Si/SiO2 interface, device characteristics are obtained as a function of a channel length. From the Wigner function distributions, the coexistence of the diffusive and the ballistic transport naturally emerges. It is shown that the scattering mechanisms tend to reduce the ballistic component of the transport. The ballistic component increases with decreasing the channel length.Comment: 21 pages, 8 figures, E-mail addresses: [email protected]

Thermoelectric properties of the bismuth telluride nanowires in the constant-relaxation-time approximation

Electronic structure of bismuth telluride nanowires with the growth directions [110] and [015] is studied in the framework of anisotropic effective mass method using the parabolic band approximation. The components of the electron and hole effective mass tensor for six valleys are calculated for both growth directions. For a square nanowire, in the temperature range from 77 K to 500 K, the dependence of the Seebeck coefficient, the electron thermal and electrical conductivity as well as the figure of merit ZT on the nanowire thickness and on the excess hole concentration are investigated in the constant-relaxation-time approximation. The carrier confinement is shown to play essential role for square nanowires with thickness less than 30 nm. The confinement decreases both the carrier concentration and the thermal conductivity but increases the maximum value of Seebeck coefficient in contrast to the excess holes (impurities). The confinement effect is stronger for the direction [015] than for the direction [110] due to the carrier mass difference for these directions. The carrier confinement increases maximum value of ZT and shifts it towards high temperatures. For the p-type bismuth telluride nanowires with growth direction [110], the maximum value of the figure of merit is equal to 1.3, 1.6, and 2.8, correspondingly, at temperatures 310 K, 390 K, 480 K and the nanowire thicknesses 30 nm, 15 nm, and 7 nm. At the room temperature, the figure of merit equals 1.2, 1.3, and 1.7, respectively.Comment: 13 pages, 7 figures, 2 tables, typos added, added references for sections 2-

Institutional Real Estate Investment Practices: Swedish and United States Experiences

In recent years, institutional real estate investment activity has experienced major changes in many countries throughout the world. In Sweden, large-scale investment projects have increasingly been dominated by several major financial institutions. As in other places, real estate investment analysis in Sweden has undergone considerable change in terms of rigor, focus, and perspective. This study is the first effort ever to systematically assess the current situation in the market for commercial real estate in Sweden. The study presents the results of a comprehensive 1988 survey of over 200 commercial real estate investment participants in Sweden including insurance companies, pension funds, construction firms, property management firms, and investment companies. The survey results are compared with results reported in the United States and elsewhere within the corporate and real estate capital budgeting literatures. The results reported here can thus be compared cross-sectionally as well as over time across numerous dimensions.

Scaling analysis of electron transport through metal-semiconducting carbon nanotube interfaces: Evolution from the molecular limit to the bulk limit

We present a scaling analysis of electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube length within the coherent transport regime, which takes fully into account atomic-scale electronic structure and three-dimensional electrostatics of the metal-nanotube interface using a real-space Green's function based self-consistent tight-binding theory. As the first example, we examine devices formed by attaching finite-size single-wall carbon nanotubes (SWNT) to both high- and low- work function metallic electrodes through the dangling bonds at the end. We analyze the nature of Schottky barrier formation at the metal-nanotube interface by examining the electrostatics, the band lineup and the conductance of the metal-SWNT molecule-metal junction as a function of the SWNT molecule length and metal-SWNT coupling strength. We show that the confined cylindrical geometry and the atomistic nature of electronic processes across the metal-SWNT interface leads to a different physical picture of band alignment from that of the planar metal-semiconductor interface. We analyze the temperature and length dependence of the conductance of the SWNT junctions, which shows a transition from tunneling- to thermal activation-dominated transport with increasing nanotube length. The temperature dependence of the conductance is much weaker than that of the planar metal-semiconductor interface due to the finite number of conduction channels within the SWNT junctions. We find that the current-voltage characteristics of the metal-SWNT molecule-metal junctions are sensitive to models of the potential response to the applied source/drain bias voltages.Comment: Minor revision to appear in Phys. Rev. B. Color figures available in the online PRB version or upon request to: [email protected]

Ground-based detection of sodium in the transmission spectrum of exoplanet HD209458b

[Context] The first detection of an atmosphere around an extrasolar planet was presented by Charbonneau and collaborators in 2002. In the optical transmission spectrum of the transiting exoplanet HD209458b, an absorption signal from sodium was measured at a level of 0.023+-0.006%, using the STIS spectrograph on the Hubble Space Telescope. Despite several attempts, so far only upper limits to the Na D absorption have been obtained using telescopes from the ground, and the HST result has yet to be confirmed. [Aims] The aims of this paper are to re-analyse data taken with the High Dispersion Spectrograph on the Subaru telescope, to correct for systematic effects dominating the data quality, and to improve on previous results presented in the literature. [Methods] The data reduction process was altered in several places, most importantly allowing for small shifts in the wavelength solution. The relative depth of all lines in the spectra, including the two sodium D lines, are found to correlate strongly with the continuum count level in the spectra. These variations are attributed to non-linearity effects in the CCDs. After removal of this empirical relation the uncertainties in the line depths are only a fraction above that expected from photon statistics. [Results] The sodium absorption due to the planet's atmosphere is detected at >5 sigma, at a level of 0.056+-0.007% (2x3.0 Ang band), 0.070+-0.011% (2x1.5 Ang band), and 0.135+-0.017% (2x0.75 Ang band). There is no evidence that the planetary absorption signal is shifted with respect to the stellar absorption, as recently claimed for HD189733b. The measurements in the two most narrow bands indicate that some signal is being resolved.[abridged]Comment: Latex, 7 pages: accepted for publication in Astronomy & Astrophysic

Silicon-based molecular electronics

Molecular electronics on silicon has distinct advantages over its metallic counterpart. We describe a theoretical formalism for transport through semiconductor-molecule heterostructures, combining a semi-empirical treatment of the bulk silicon bandstructure with a first-principles description of the molecular chemistry and its bonding with silicon. Using this method, we demonstrate that the presence of a semiconducting band-edge can lead to a novel molecular resonant tunneling diode (RTD) that shows negative differential resistance (NDR) when the molecular levels are driven by an STM potential into the semiconducting band-gap. The peaks appear for positive bias on a p-doped and negative for an n-doped substrate. Charging in these devices is compromised by the RTD action, allowing possible identification of several molecular highest occupied (HOMO) and lowest unoccupied (LUMO) levels. Recent experiments by Hersam et al. [1] support our theoretical predictions.Comment: Author list is reverse alphabetical. All authors contributed equally. Email: rakshit/liangg/ ghosha/[email protected]

Resonant tunnelling features in the transport spectroscopy of quantum dots

We present a review of features due to resonant tunnelling in transport spectroscopy experiments on quantum dots and single donors. The review covers features attributable to intrinsic properties of the dot as well as extrinsic effects, with a focus on the most common operating conditions. We describe several phenomena that can lead to apparently identical signatures in a bias spectroscopy measurement, with the aim of providing experimental methods to distinguish between their different physical origins. The correct classification of the resonant tunnelling features is an essential requirement to understand the details of the confining potential or predict the performance of the dot for quantum information processing.Comment: 18 pages, 7 figures. Short review article submitted to Nanotechnology, special issue on 'Quantum Science and Technology at the Nanoscale

Intrinsic gain modulation and adaptive neural coding

In many cases, the computation of a neural system can be reduced to a receptive field, or a set of linear filters, and a thresholding function, or gain curve, which determines the firing probability; this is known as a linear/nonlinear model. In some forms of sensory adaptation, these linear filters and gain curve adjust very rapidly to changes in the variance of a randomly varying driving input. An apparently similar but previously unrelated issue is the observation of gain control by background noise in cortical neurons: the slope of the firing rate vs current (f-I) curve changes with the variance of background random input. Here, we show a direct correspondence between these two observations by relating variance-dependent changes in the gain of f-I curves to characteristics of the changing empirical linear/nonlinear model obtained by sampling. In the case that the underlying system is fixed, we derive relationships relating the change of the gain with respect to both mean and variance with the receptive fields derived from reverse correlation on a white noise stimulus. Using two conductance-based model neurons that display distinct gain modulation properties through a simple change in parameters, we show that coding properties of both these models quantitatively satisfy the predicted relationships. Our results describe how both variance-dependent gain modulation and adaptive neural computation result from intrinsic nonlinearity.Comment: 24 pages, 4 figures, 1 supporting informatio

Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors

Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored. Besides complexity, high defect densities and junction leakage currents present limitations in the approach. Motivated by this challenge, here we utilize an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on Si/SiO2 substrates. As a parallel to silicon-on-insulator (SOI) technology14,we use the abbreviation "XOI" to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsOx layer (~1 nm thick). The fabricated FETs exhibit an impressive peak transconductance of ~1.6 mS/{\mu}m at VDS=0.5V with ON/OFF current ratio of greater than 10,000 and a subthreshold swing of 107-150 mV/decade for a channel length of ~0.5 {\mu}m