Dissipation in Quasi One-Dimensional Superconducting Single-Crystal Sn Nanowires

Electrical transport measurements were made on single-crystal Sn nanowires to understand the intrinsic dissipation mechanisms of a one-dimensional superconductor. While the resistance of wires of diameter larger than 70 nm drops precipitately to zero at Tc near 3.7 K, a residual resistive tail extending down to low temperature is found for wires with diameters of 20 and 40 nm. As a function of temperature, the logarithm of the residual resistance appears as two linear sections, one within a few tenths of a degree below Tc and the other extending down to at least 0.47 K, the minimum temperature of the measurements. The residual resistance is found to be ohmic at all temperatures below Tc of Sn. These findings are suggestive of a thermally activated phase slip process near Tc and quantum fluctuation-induced phase slip process in the low temperature regime. When the excitation current exceeds a critical value, the voltage-current (V-I) curves show a series of discrete steps in approaching the normal state. These steps cannot be fully understood with the classical Skocpol-Beasley-Tinkham phase slip center model (PSC), but can be qualitatively accounted for partly by the PSC model modified by Michotte et al.Comment: 7 pages, 5 figures. To be appeared on Physical Review B 71, 200

Fluctuation Conductivity in Unconventional Superconductors near Critical Disorder

The fluctuation conductivity $\sigma_{\rm s}$ in bulk superconductors with non s-wave pairing and with nonmagnetic disorder of strength $D$ is studied at low $T$ and within the Gaussian approximation. It is shown by assuming a quasi two-dimensional (2D) electronic state that, only if the gap function d_\mu({\p}) is, as in a 2D p-wave pairing state, linear in the in-plane (relative) momentum {\p}_\perp, the in-plane fluctuation conductivity on the line $D=D_c$ is weakly divergent in low $T$ limit. The present result may be useful in clarifying the true gap function of spin-triplet ${\rm Sr_2RuO_4}$ through resistivity measurements.Comment: 8 pages, 1 figure, to be published in J. Phys. Soc. Jpn. 70, No.10 (2001

Current-voltage characteristics of quasi-one-dimensional superconductors: An S-curve in the constant voltage regime

Applying a constant voltage to superconducting nanowires we find that its IV-characteristic exhibits an unusual S-behavior. This behavior is the direct consequence of the dynamics of the superconducting condensate and of the existence of two different critical currents: j_{c2} at which the pure superconducting state becomes unstable and j_{c1}<j_{c2} at which the phase slip state is realized in the system.Comment: 4 pages, 5 figures, replaced with minor change

High-field muSR studies of superconducting and magnetic correlations in cuprates above Tc

The advent of high transverse-field muon spin rotation (TF-muSR) has led to recent muSR investigations of the magnetic-field response of cuprates above the superconducting transition temperature T_c. Here the results of such experiments on hole-doped cuprates are reviewed. Although these investigations are currently ongoing, it is clear that the effects of high field on the internal magnetic field distribution of these materials is dependent upon a competition between superconductivity and magnetism. In La_{2-x}Sr_xCuO_4 the response to the external field above Tc is dominated by heterogeneous spin magnetism. However, the magnetism that dominates the observed inhomogeneous line broadening below x ~ 0.19 is overwhelmed by the emergence of a completely different kind of magnetism in the heavily overdoped regime. The origin of the magnetism above x ~ 0.19 is currently unknown, but its presence hints at a competition between superconductivity and magnetism that is reminiscent of the underdoped regime. In contrast, the width of the internal field distribution of underdoped YBa_2Cu_3O_y above Tc is observed to track Tc and the density of superconducting carriers. This observation suggests that the magnetic response above Tc is not dominated by electronic moments, but rather inhomogeneous fluctuating superconductivity.Comment: 28 pages, 11 figures, 104 reference

Transition from synchronous to asynchronous superfluid phase slippage in an aperture array

We have investigated the dynamics of superfluid phase slippage in an array of apertures. The magnitude of the dissipative phase slips shows that they occur simultaneously in all the apertures when the temperature is around 10 mK below the superfluid transition, and subsequently lose their simultaneity as the temperature is lowered. We find that when periodic synchronous phase slippage occurs, the synchronicity exists from the very first phase slip, and therefore is not due to mode locking of interacting oscillators. When the system is allowed to relax freely from a given initial energy, the total number of phase slips that occur and the energy left in the system after the last phase slip depends reproducibly on the initial energy. We find the energy remaining after the final phase slip is a periodic function of the initial system energy. This dependence directly reveals the discrete and dissipative nature of the phase slips and is a powerful diagnostic for investigation of synchronicity in the array. When the array slips synchronously, this periodic energy function is a sharp sawtooth. As the temperature is lowered and the degree of synchronicity drops, the peak of this sawtooth becomes rounded, suggesting a broadening of the time interval over which the array slips. The underlying mechanism for the higher temperature synchronous behavior and the following loss of synchronicity at lower temperatures is not yet understood. We discuss the implications of our measurements and pose several questions that need to be resolved by a theory explaining the synchronous behavior in this quantum system. An understanding of the array phase slip process is essential to the optimization of superfluid `dc-SQUID' gyroscopes and interferometers.Comment: 10 pages, 4 figure

Coulomb drag at \nu = 1/2: Composite fermion pairing fluctuations

We consider the Coulomb drag between two two-dimensional electron layers at filling factor \nu = 1/2 each, using a strong coupling approach within the composite fermion picture. Due to an attractive interlayer interaction, composite fermions are expected to form a paired state below a critical temperature T_c. We find that above T_c pairing fluctuations make the longitudinal transresistivity \rho_D increase with decreasing temperature. The pairing mechanism we study is very sensitive to density variations in the two layers, and to an applied current. We discuss possible relation to an experiment by Lilly et al. [Phys. Rev. Lett. 80, 1714 (1998)].Comment: REVTeX, 4 pages, 1 figur

Single domain transport measurements of C60 films

Thin films of potassium doped C60, an organic semiconductor, have been grown on silicon. The films were grown in ultra-high vacuum by thermal evaporation of C60 onto oxide-terminated silicon as well as reconstructed Si(111). The substrate termination had a drastic influence on the C60 growth mode which is directly reflected in the electrical properties of the films. Measured on the single domain length scale, these films revealed resistivities comparable to bulk single crystals. In situ electrical transport properties were correlated to the morphology of the film determined by scanning tunneling microscopy. The observed excess conductivity above the superconducting transition can be attributed to two-dimensional fluctuations.Comment: 4 pages, 4 figure

Universal conductance fluctuations in three dimensional metallic single crystals of Si

In this paper we report the measurement of conductance fluctuations in single crystals of Si made metallic by heavy doping (n \approx 2-2.5n_c, n_c being critical composition at Metal-Insulator transition). Since all dimensions (L) of the samples are much larger than the electron phase coherent length L_\phi (L/L_\phi \sim 10^3), our system is truly three dimensional. Temperature and magnetic field dependence of noise strongly indicate the universal conductance fluctuations (UCF) as predominant source of the observed magnitude of noise. Conductance fluctuations within a single phase coherent region of L_\phi^3 was found to be saturated at \approx (e^2/h)^2. An accurate knowledge of the level of disorder, enables us to calculate the change in conductance \delta G_1 due to movement of a single scatterer as \delta G_1 \sim e^2/h, which is \sim 2 orders of magnitude higher than its theoretically expected value in 3D systems.Comment: Text revised version. 4 eps figs unchange

Current-induced highly dissipative domains in high Tc thin films

We have investigated the resistive response of high Tc thin films submitted to a high density of current. For this purpose, current pulses were applied into bridges made of Nd(1.15)Ba(1.85)Cu3O7 and Bi2Sr2CaCu2O8. By recording the time dependent voltage, we observe that at a certain critical current j*, a highly dissipative domain develops somewhere along the bridge. The successive formation of these domains produces stepped I-V characteristics. We present evidences that these domains are not regions with a temperature above Tc, as for hot spots. In fact this phenomenon appears to be analog to the nucleation of phase-slip centers observed in conventional superconductors near Tc, but here in contrast they appear in a wide temperature range. Under some conditions, these domains will propagate and destroy the superconductivity within the whole sample. We have measured the temperature dependence of j* and found a similar behavior in the two investigated compounds. This temperature dependence is just the one expected for the depairing current, but the amplitude is about 100 times smaller.Comment: 9 pages, 9 figures, Revtex, to appear in Phys. Rev.

A superconducting-nanowire 3-terminal electronic device

In existing superconducting electronic systems, Josephson junctions play a central role in processing and transmitting small-amplitude electrical signals. However, Josephson-junction-based devices have a number of limitations including: (1) sensitivity to magnetic fields, (2) limited gain, (3) inability to drive large impedances, and (4) difficulty in controlling the junction critical current (which depends sensitively on sub-Angstrom-scale thickness variation of the tunneling barrier). Here we present a nanowire-based superconducting electronic device, which we call the nanocryotron (nTron), that does not rely on Josephson junctions and can be patterned from a single thin film of superconducting material with conventional electron-beam lithography. The nTron is a 3-terminal, T-shaped planar device with a gain of ~20 that is capable of driving impedances of more than 100 k{\Omega}, and operates in typical ambient magnetic fields at temperatures of 4.2K. The device uses a localized, Joule-heated hotspot formed in the gate to modulate current flow in a perpendicular superconducting channel. We have characterized the nTron, matched it to a theoretical framework, and applied it both as a digital logic element in a half-adder circuit, and as a digital amplifier for superconducting nanowire single-photon detectors pulses. The nTron has immediate applications in classical and quantum communications, photon sensing and astronomy, and its performance characteristics make it compatible with existing superconducting technologies. Furthermore, because the hotspot effect occurs in all known superconductors, we expect the design to be extensible to other materials, providing a path to digital logic, switching, and amplification in high-temperature superconductors