Thermal acoustic oscillations, volume 2

A number of thermal acoustic oscillation phenomena and their effects on cryogenic systems were studied. The conditions which cause or suppress oscillations, the frequency, amplitude and intensity of oscillations when they exist, and the heat loss they induce are discussed. Methods of numerical analysis utilizing the digital computer were developed for use in cryogenic systems design. In addition, an experimental verification program was conducted to study oscillation wave characteristics and boiloff rate. The data were then reduced and compared with the analytical predictions

Electronic bandstructure and optical gain of lattice matched III-V dilute nitride bismide quantum wells for 1.55 μ\mum optical communication systems

Dilute nitride bismide GaNBiAs is a potential semiconductor alloy for near- and mid-infrared applications, particularly in 1.55 $\mu$m optical communication systems. Incorporating dilute amounts of Bismuth (Bi) into GaAs reduces the effective bandgap rapidly, while significantly increasing the spin-orbit-splitting energy. Additional incorporation of dilute amounts of Nitrogen (N) helps to attain lattice matching with GaAs, while providing a route for flexible bandgap tuning. Here we present a study of the electronic bandstructure and optical gain of the lattice matched GaN$_x$Bi$_y$As$_{1-x-y}$/GaAs quaternary alloy quantum well (QW) based on the 16-band k$\cdot$p model. We have taken into consideration the interactions between the N and Bi impurity states with the host material based on the band anticrossing (BAC) and valence band anticrossing (VBAC) model. The optical gain calculation is based on the density matrix theory. We have considered different lattice matched GaNBiAs QW cases and studied their energy dispersion curves, optical gain spectrum, maximum optical gain and differential gain; and compared their performances based on these factors. The thickness and composition of these QWs were varied in order to keep the emission peak fixed at 1.55 $\mu$m. The well thickness has an effect on the spectral width of the gain curves. On the other hand, a variation in the injection carrier density has different effects on the maximum gain and differential gain of QWs of varying thicknesses. Among the cases studied, we found that the 6.3 nm thick GaN$_3$Bi$_{5.17}$As$_{91.83}$ lattice matched QW was most suited for 1.55 $\mu$m (0.8 eV) GaAs-based photonic applications.Comment: Accepted in AIP Journal of Applied Physic

Competing Quantum Orderings in Cuprate Superconductors: A Minimal Model

We present a minimal model for cuprate superconductors. At the unrestricted mean-field level, the model produces homogeneous superconductivity at large doping, striped superconductivity in the underdoped regime and various antiferromagnetic phases at low doping and for high temperatures. On the underdoped side, the superconductor is intrinsically inhomogeneous and global phase coherence is achieved through Josephson-like coupling of the superconducting stripes. The model is applied to calculate experimentally measurable ARPES spectra.Comment: 5 pages, 4 eps included figure

Diffusion of a liquid nanoparticle on a disordered substrate

We perform molecular dynamic simulations of liquid nanoparticles deposited on a disordered substrate. The motion of the nanoparticle is characterised by a 'stick and roll' diffusive process. Long simulation times ($\simeq \mu s$), analysis of mean square displacements and stacking time distribution functions demonstrate that the nanoparticle undergoes a normal diffusion in spite of long sticking times. We propose a phenomenological model for the size and temperature dependence of the diffusion coefficient in which the activation energy scales as $N^{1/3}$.Comment: Accepted for publication in Phys. Rev.