Memory difference control of unknown unstable fixed points: Drifting parameter conditions and delayed measurement

Difference control schemes for controlling unstable fixed points become important if the exact position of the fixed point is unavailable or moving due to drifting parameters. We propose a memory difference control method for stabilization of a priori unknown unstable fixed points by introducing a memory term. If the amplitude of the control applied in the previous time step is added to the present control signal, fixed points with arbitrary Lyapunov numbers can be controlled. This method is also extended to compensate arbitrary time steps of measurement delay. We show that our method stabilizes orbits of the Chua circuit where ordinary difference control fails.Comment: 5 pages, 8 figures. See also chao-dyn/9810029 (Phys. Rev. E 70, 056225) and nlin.CD/0204031 (Phys. Rev. E 70, 046205

InGaN nano-ring structures for high-efficiency light emitting diodes

A technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated

Spanning Knowledge Holes In IS Projects

Prior studies have demonstrated the importance of bridging structural holes across functional groups in IS projects. In this study, we argue that bridging structural holes is necessary but insufficient for ensuring project success. An additional requirement is that knowledge holes across functional groups need to be bridged to enable effective problem-solving across functional groups. We propose and empirically study the concept of knowledge holes in a case study of an ERP upgrade. Our findings suggest that complementary to the concept of structural holes, the concept of knowledge holes is useful for explaining different project outcomes. Our findings also demonstrate methods for bridging knowledge holes. Contributions of this study are manifold

Leveraging Social Capital to Obtain Top Management Support in Complex, Cross-Functional IT Projects

Research argues that a major reason for IT project failure is the lack of top management support. However, obtaining top management support is often considered outside the IT project team’s control. In this paper, we investigate how IT project teams can obtain such support. We find that creating and mobilizing social capital through repeated interaction with top managers and their confidants helps a project obtain top management support. Also, a failure to use social capital to engage top management can cause a decrease in their support. We demonstrate these points through a natural experiment of the support of three division heads and their corresponding divisions in the implementation of an enterprise system. We demonstrate how and why top management support may be obtained by (1) building social capital and (2) mobilizing existing social capital—directly with top management or indirectly with individuals with influence on top management

The Neutrino Magnetic Moment Induced by Leptoquarks

Allowing leptoquarks to interact with both right-handed and left-handed neutrinos (i.e., ``non-chiral'' leptoquarks), we show that a non-zero neutrino magnetic moment can arise naturally. Although the mass of the non-chiral vector leptoquark that couples to the first generation fermions is constrained severely by universality of the $\pi^+$ leptonic decays and is found to be greater than 50 TeV, the masses of the second and third generation non-chiral vector leptoquarks may evade such constraint and may in general be in the range of $1\sim 100$ TeV. With reasonable input mass and coupling values, we find that the neutrino magnetic moment due to the second generation leptoquarks is of the order of $10^{-12}\sim 10^{-16} \mu_{\rm B}$ while that caused by the third generation leptoquarks, being enhanced significantly by the large top quark mass, is in the range of $10^{-10}\sim 10^{-14} \mu_{\rm B}$.Comment: 11 pages, 3 eps figures, uses revte

Low-Mass Baryon-Antibaryon Enhancements in B Decays

The nature of low-mass baryon-antibaryon enhancements seen in B decays is explored. Three possibilities include (i) states near threshold as found in a model by Nambu and Jona-Lasinio, (ii) isoscalar states with $J^{PC} = 0^{\pm +}$ coupled to a pair of gluons, and (iii) low-mass enhancements favored by the fragmentation process. Ways of distinguishing these mechanisms using angular distributions and flavor symmetry are proposed.Comment: 8 pages, LaTeX, no figures, to be submitted to Phys. Rev. D. One reference adde

The Fourth Element: Characteristics, Modelling, and Electromagnetic Theory of the Memristor

In 2008, researchers at HP Labs published a paper in {\it Nature} reporting the realisation of a new basic circuit element that completes the missing link between charge and flux-linkage, which was postulated by Leon Chua in 1971. The HP memristor is based on a nanometer scale TiO$_2$ thin-film, containing a doped region and an undoped region. Further to proposed applications of memristors in artificial biological systems and nonvolatile RAM (NVRAM), they also enable reconfigurable nanoelectronics. Moreover, memristors provide new paradigms in application specific integrated circuits (ASICs) and field programmable gate arrays (FPGAs). A significant reduction in area with an unprecedented memory capacity and device density are the potential advantages of memristors for Integrated Circuits (ICs). This work reviews the memristor and provides mathematical and SPICE models for memristors. Insight into the memristor device is given via recalling the quasi-static expansion of Maxwell's equations. We also review Chua's arguments based on electromagnetic theory.Comment: 28 pages, 14 figures, Accepted as a regular paper - the Proceedings of Royal Society

Structural Characterization of Rapid Thermal Oxidized Si\u3csub\u3e1−x−y\u3c/sub\u3eGe\u3csub\u3ex\u3c/sub\u3eC\u3csub\u3ey\u3c/sub\u3e Alloy Films Grown by Rapid Thermal Chemical Vapor Deposition

The structural properties of as-grown and rapid thermal oxidized Si1−x−yGexCy epitaxial layers have been examined using a combination of infrared, x-ray photoelectron, x-ray diffraction, secondary ion mass spectroscopy, and Raman spectroscopy techniques. Carbon incorporation into the Si1−x−yGexCy system can lead to compressive or tensile strain in the film. The structural properties of the oxidized Si1−x−yGexCy film depend on the type of strain (i.e., carbon concentration) of the as-prepared film. For compressive or fully compensated films, the oxidation process drastically reduces the carbon content so that the oxidized films closely resemble to Si1−xGex films. For tensile films, two broad regions, one with carbon content higher and the other lower than that required for full strain compensation, coexist in the oxidized films

Evidence for Factorization in Three-body B --> D(*) K- K0 Decays

Motivated by recent experimental results, we use a factorization approach to study the three-body B --> D(*) K- K0 decay modes. Two mechanisms are proposed for kaon pair production: current-produced (from vacuum) and transition (from B meson). The Bbar0 --> D(*)+ K- K0 decay is governed solely by the current-produced mechanism. As the kaon pair can be produced only by the vector current, the matrix element can be extracted from e+ e- --> K Kbar processes via isospin relations. The decay rates obtained this way are in good agreement with experiment. Both current-produced and transition processes contribute to B- --> D(*)0 K- K0 decays. By using QCD counting rules and the measured B- --> D(*)0 K- K0 decay rates, the measured decay spectra can be understood.Comment: 17 pages, 6 figure