Analisis Perbedaan Tingkat Kesehatan Bank Berdasarkan Metode REC (Studi Kasus pada Bank Swasta Nasional Devisa dan Bank Asing yang Terdaftar di Bursa Efek Indonesia Periode 2016-2017)

Stable Bank is a bank, which is able to run its function well. It means that stable bank keeps and maintain society’s trust, has run intermediate function, and help payment traffic as well as is used by the government to perform its policy. The study aimed at analyzing the difference of stability level of national tax private bank and foreign bank viewed from risk profile, earning and capital from 2016 to 2017. It was comparative study using secondary data collected from Indonesia Share Market with population and sample mining corporation listed in Indonesia Share Market from 2016 to 2017. Based on the result of the study of the difference level of stability level on national tax private bank and foreign bank from 2016 to 2017 viewed from risk profile factor, showed that there was significant difference based on the liquidity risk ratio, there was no significant difference of Earnings factor (rent ability) based on ratio of NIM, and there was significant difference on CAR factor

Secondary crystalline phases identification in Cu2ZnSnSe4 thin films: contributions from Raman scattering and photoluminescence

In this work, we present the Raman peak positions of the quaternary pure selenide compound Cu2ZnSnSe4 (CZTSe) and related secondary phases that were grown and studied under the same conditions. A vast discussion about the position of the X-ray diffraction (XRD) reflections of these compounds is presented. It is known that by using XRD only, CZTSe can be identified but nothing can be said about the presence of some secondary phases. Thin films of CZTSe, Cu2SnSe3, ZnSe, SnSe, SnSe2, MoSe2 and a-Se were grown, which allowed their investigation by Raman spectroscopy (RS). Here we present all the Raman spectra of these phases and discuss the similarities with the spectra of CZTSe. The effective analysis depth for the common back-scattering geometry commonly used in RS measurements, as well as the laser penetration depth for photoluminescence (PL) were estimated for different wavelength values. The observed asymmetric PL band on a CZTSe film is compatible with the presence of CZTSe single-phase and is discussed in the scope of the fluctuating potentials’ model. The estimated bandgap energy is close to the values obtained from absorption measurements. In general, the phase identification of CZTSe benefits from the contributions of RS and PL along with the XRD discussion.info:eu-repo/semantics/publishedVersio

High Throughput Discovery of Effective Metal Doping in FeVO4 for Photoelectrochemical Water Splitting

FeVO4 is a potential photoanode candidate with favorable bandgap energy for absorbing visible light in the solar spectrum. However, the achieved photocurrents are still much lower than the theoretical photocurrent due to poor bulk carrier separation efficiency. Herein, the aim is to improve FeVO4 charge transport properties by searching for suitable metal doping using combinatorial methods. Thin amp; 8208;film FeVO4 libraries with different doping ratios of Zn, Ni, Cr, Mo, and W are fabricated on fluorine doped tin oxide substrates using combinatorial inkjet printing and their photoelectrochemical properties screened using photoscanning droplet cell. Mo and W doping show higher current density compared with undoped FeVO4; whereas the photocurrent decreases for Ni amp; 8208; and Zn amp; 8208;doped samples. The best photocurrent is achieved with 7 doping ratio of Cr. Cr is discovered as a promising dopant for the first time, which is more effective than reported Mo or W for FeVO4 photoanode. The replacement of Cr3 to Fe3 in FeVO4 crystal lattice helps to mainly improve the catalytic activity for charge transfer, which results in the enhancement of photoresponse of the FeVO4 photoanod

Performance and limits of 2.0 eV bandgap CuInGaS2solar absorber integrated with CdS buffer on F:SnO2substrate for multijunction photovoltaic and photoelectrochemical water splitting devices

We report on the electrical properties of 2.0 eV bandgap (EG) CuInGaS2 (CIGS) solar absorbers integrated on SnO2:F (FTO) substrates and interfaced with CdS buffer layers for multijunction solar cells and photoelectrochemical water splitting devices. The averaged short-circuit photocurrent density measured on nine ITO/ZnO/CdS/CIGS/FTO cells was 10.0 mA cm-2, a value corresponding to 70% of the optical limit for a 2.0 eV-bandgap absorber. However, the averaged power conversion efficiency was low (avg.: 2.4%) and for the most part limited by modest open circuit voltage values (avg.: 587 mV). Solid-state analyses performed at low temperatures revealed poor energetic alignment at the CdS/CIGS top interface. An activation energy (1.1 eV) for the dominant recombination mechanism significantly lower than the CIGS bandgap was measured, implying that recombination takes place near the CdS/CIGS interface. This finding is supported by the large difference found between the quasi Fermi level splitting of the bare absorber (1.17 eV) and the open circuit voltage of the device. Complementary theoretical calculations identified Fermi level pinning as a possible cause for the poor interface energetics through Cd incorporation on both the Cu and the group-III sites, resulting in a large conduction band offset (∼0.9 eV) at the CdS/CIGS interface. This work underlines the need for new EG-tunable buffers coupled with optimized CIGS surface energetics (e.g. ordered vacancy compounds) for future chalcopyrite-based multijunction solar cells and photoelectrochemical water splitting devices. This journal i