Enriched Long-term Recurrent Convolutional Network for Facial Micro-Expression Recognition

Facial micro-expression (ME) recognition has posed a huge challenge to researchers for its subtlety in motion and limited databases. Recently, handcrafted techniques have achieved superior performance in micro-expression recognition but at the cost of domain specificity and cumbersome parametric tunings. In this paper, we propose an Enriched Long-term Recurrent Convolutional Network (ELRCN) that first encodes each micro-expression frame into a feature vector through CNN module(s), then predicts the micro-expression by passing the feature vector through a Long Short-term Memory (LSTM) module. The framework contains two different network variants: (1) Channel-wise stacking of input data for spatial enrichment, (2) Feature-wise stacking of features for temporal enrichment. We demonstrate that the proposed approach is able to achieve reasonably good performance, without data augmentation. In addition, we also present ablation studies conducted on the framework and visualizations of what CNN "sees" when predicting the micro-expression classes.Comment: Published in Micro-Expression Grand Challenge 2018, Workshop of 13th IEEE Facial & Gesture 201

Charge Ordered RVB States in the Doped Cuprates

We study charge ordered d-wave resonating valence bond states (dRVB) in the doped cuprates, and estimate the energies of these states in a generalized $t-J$ model by using a renormalized mean field theory. The long range Coulomb potential tends to modulate the charge density in favor of the charge ordered RVB state. The possible relevance to the recently observed $4 \times 4$ checkerboard patterns in tunnelling conductance in high $T_c$ cuprates is discussed.Comment: 4 pages, 4 figures, 3 table

Spin-Orbit Coupling and Ion Displacements in Multiferroic TbMnO3

The electronic and magnetic properties of TbMnO3 leading to its ferroelectric (FE) polarization were investigated on the basis of relativistic density functional theory (DFT) calculations. In agreement with experiment, we show that the spin-spiral plane of TbMnO3 can be either the bc- or ab-plane, but not the ac-plane. As for the mechanism of FE polarization, our work reveals that the "pure electronic" model by Katsura, Nagaosa and Balatsky (KNB) is inadequate in predicting the absolute direction of FE polarization. For the ab-plane spin-spiral state of TbMnO3, the direction of FE polarization predicted by the KNB model is opposite to that predicted by DFT calculations. In determining the magnitude and the absolute direction of FE polarization in spin-spiral states, it is found crucial to consider the displacements of the ions from their ecntrosymmetric positions

Understanding the Clean Interface between Covalent Si and Ionic Al2O3

The atomic and electronic structures of the (001)-Si/(001)-gamma-Al2O3 heterointerface are investigated by first principles total energy calculations combined with a newly developed "modified basin-hopping" method. It is found that all interface Si atoms are fourfold coordinated due to the formation of Si-O and unexpected covalent Si-Al bonds in the new abrupt interface model. And the interface has perfect electronic properties in that the unpassivated interface has a large LDA band gap and no gap levels. These results show that it is possible to have clean semiconductor-oxide interfaces

Analytical Solution of Suspended Sediment Concentration Profile: Relevance of Dispersive Flow Term in Vegetated Channels

YesSimulation of the suspended sediment concentration (SSC) has great significance in predicting the sediment transport rate, vegetation growth and the river ecosystem in the vegetated open channel flows. The present study focuses on investigating the vertical SSC profile in the vegetated open channel flows. To this end, a model of the dispersive flux is proposed in which the dispersive coefficient is expressed as partitioned linear profile above or below the half height of vegetation. The double-averaging method, i.e. time-spatial average, is applied to improve the prediction accuracy of the vertical SSC profile in the vegetated open channel flows. The analytical solution of SSC in both the submerged and the emergent vegetated open channel flows is obtained by solving the vertical double-averaging sediment advection-diffusion equation. The morphological coefficient, a key factor of the dispersive coefficient, is obtained by fitting the existing experimental data. The analytically predicted SSC agrees well with the experimental measurements, indicating that the proposed model can be used to accurately predict the SSC in the vegetated open channel flows. Results show that the dispersive term can be ignored in the region without vegetation, while the dispersive term has significant effect on the vertical SSC profile within the region of vegetation. The present study demonstrates that the dispersive coefficient is closely related to the vegetation density, the vegetation structure and the stem Reynolds number, but has little relation to the flow depth. With a few exceptions, the absolute value of the dispersive coefficient decreases with the increase of the vegetation density and increases with the increase of the stem Reynolds number in the submerged vegetated open channel flows.Natural Science Foundation of China (Nos. 11872285 and 11672213), The UK Royal Society – International Exchanges Program (IES\R2\181122) and the Open Funding of State Key Laboratory of Water Resources and Hydropower Engineering Science (WRHES), Wuhan University (Project No: 2018HLG01)

Stochastic Simulation of the Suspended Sediment Deposition in the Channel With Vegetation and Its Relevance to Turbulent Kinetic Energy

YesThe aquatic vegetation patch plays a significant role on sediment net deposition in the vegetated channels. Particularly, the flow is decelerated at the leading edge of a patch that tends to induce vertical updraft, that is, a diverging flow region, in which vegetation greatly affects the pattern of sediment net deposition. This study focuses on the simulation of the sediment net deposition in the whole vegetation patch region through an innovative random displacement model, a Lagrange method, with probability-based boundary conditions, instead of the reflection or sorption boundary at the channel bottom. The probability model of deposition and resuspension is proposed according to the flow field characteristics in the different regions of the vegetation patch. The variation of the sediment deposition and resuspension with the turbulent kinetic energy is analyzed to illustrate the effect of the turbulence induced by vegetation, represented by the dimensionless turbulent kinetic energy (ψ), on the sediment deposition and resuspension. The sediment deposition predicted by the proposed model agrees well with the experimental measurements. Results show that the effect of vegetation on the sediment deposition and resuspension motions begins to prevail when the vegetation-induced ψ is larger than its threshold, ψ *. The threshold of ψ is predicted to be within 6.8–10 according to the simulation results in this study. As the turbulent kinetic energy increases, the deposition probability decreases continuously when ψ > ψ *.ational Natural Science Foundation of China (NSFC). Grant Numbers: 52020105006, 11872285; UK Royal Society - International Exchanges Program. Grant Number: IES\R2\181122; Open Funding of State Key Laboratory of Water Resources and Hydropower Engineering Science (WRHES), Wuhan University. Grant Number: 2018HLG0

Electric fields and valence band offsets at strained [111] heterojunctions

[111] ordered common atom strained layer superlattices (in particular the common anion GaSb/InSb system and the common cation InAs/InSb system) are investigated using the ab initio full potential linearized augmented plane wave (FLAPW) method. We have focused our attention on the potential line-up at the two sides of the homopolar isovalent heterojunctions considered, and in particular on its dependence on the strain conditions and on the strain induced electric fields. We propose a procedure to locate the interface plane where the band alignment could be evaluated; furthermore, we suggest that the polarization charges, due to piezoelectric effects, are approximately confined to a narrow region close to the interface and do not affect the potential discontinuity. We find that the interface contribution to the valence band offset is substantially unaffected by strain conditions, whereas the total band line-up is highly tunable, as a function of the strain conditions. Finally, we compare our results with those obtained for [001] heterojunctions.Comment: 18 pages, Latex-file, to appear in Phys.Rev.