57 research outputs found
Comparison of gamma ray effects on EPROMs and E2PROMs
This paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (EPROM) and Electrically Erasable Programmable Read Only Memory (E2PROM) components exposed to gamma rays. The results obtained for CMOS-based EPROM (NM27C010) and E2PROM (NM93CS46) components provide the evidence that EPROMs have greater radiation hardness than E2PROMs. Moreover, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in E2PROMs are irreversible. The obtained results are analyzed and interpreted on the basis of gamma ray interaction with the CMOS structure
Radiation effects in polycarbonate capacitors
The aim of this paper is to examine the influence of neutron and gamma irradiation on the dissipation factor and capacitance of capacitors with polycarbonate dielectrics. The operation of capacitors subject to extreme conditions, such as the presence of ionizing radiation fields, is of special concern in military industry and space technology. Results obtained show that the exposure to a mixed neutron and gamma radiation field causes a decrease of capacitance, while the loss tangent remains unchanged
Uticaj zraÄenja na starenje solarnih Äelija
Å iroka primena fotonaponskih (PV) solarnih sistema nameÄe potrebu izrade solarnih
Äelija od razliÄitih materijala i struktura u cilju poboljÅ”anja njihovih osobina i smanjenja cene
solarnih Äelija i struktura. Iako efikasnost pojedinih savremenih solarnih Äelija baziranih na pn
spoju, u laboratorijskim uslovima dostiže 25% (Ŕto je blizu teorijskog maksimuma od 31%),
dalje poboljÅ”anje osobina ovih ureÄaja danas predstavlja glavni preduslov njihove Å”ire
upotrebe. Poslednjih godina, tržiÅ”te fotonaponskih ureÄaja je izuzetno napredovalo, uz
godiÅ”nji rast od oko 30% godiÅ”nje (u poslednjih 5 godina). Iz tog razloga je prouÄavanje
spoljaÅ”njih Äinilaca koji utiÄu na osobine solarnih Äelija, dovodeÄi do pogorÅ”anja njenih
osnovnih parametara od izuzetnog znaÄaja. U ovom radu prikazani su rezultati dobijeni
analizom uticaja zraÄenja na starenje, pa samim tim i na kvalitet solarnih Äelija kao
fotonaponskih generatora
Radiation Hardness of Semiconductor Programmable Memories and Over-Voltage Protection Components
Comparative properties of composite poly(lactic-co-glycolic acid)/poly(acrylic acid) implants synthesized using ultraviolet and gamma irradiation
Composite implants comprising a biodegradable hydrophobic polymer matrix and crosslinked hydrogel with fixed ion exchange groups are promising materials for the construction of controlled drug delivery systems. Poly(lactic-co-glycolic acid)/poly(acrylic acid) (PLGA/PAA) composite implants in our study were synthesized using the sequential application of irradiation and immersion precipitation. Precursor solutions with all functional components were dispensed into a disc-shaped non-stick mold and cured either by ultraviolet (UV) or gamma irradiation. Cured disks were subsequently immersed in the phosphate buffer saline bath to finalize phase separation and solidification of the implants. The synthesized implants were characterized by FTIR-ATR and DSC, and their basic properties such as ion exchange capacity, swelling degree, and swelling kinetics were examined. Synthesis using gamma irradiation resulted in implants with similar ion exchange capacity, but the greater swelling degree and faster swelling kinetics compared to the implants prepared with UV irradiation. Gamma irradiation also resulted in altered and less homogeneous chemical composition compared to the implants synthesized with UV irradiation. Further investigations are required to determine the differences in drug release kinetics and degradation behavior of the synthesized implants
Comparison of Gamma Ray Effects on EPROMs and E2PROMs
This paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (EPROM) and Electrically Erasable Programmable Read Only Memory (E2PROM) components exposed to gamma rays. The results obtained for CMOS-based EPROM (NM27C010) and E2PROM (NM93CS46) components provide the evidence that EPROMs have greater radiation hardness than E2PROMs. More over, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in E2PROMs are irreversible. The obtained results are analyzed and interpreted on the basis of gamma ray interaction with the CMOS structure
MoguÄnosti poboljÅ”anja karakteristika solarnih Äelija-novi pristup
Sve veÄa potreba ÄoveÄanstva za energijom u svakom aspektu života, donela je, pored izuzetno brzog napretka tehniÄke civilizacije, a samim tim i uslova života ljudi i niz teÅ”koÄa. Do sada najÄeÅ”Äe koriÅ”Äena fosilna goriva dovodila su, a i sada dovode do veoma velike degradacije
životne sredine, Å”to uz Äinjenicu da spadaju u neobnovljive izvore energije i da su dostupne koliÄine ove vrste goriva ograniÄene, predstavlja glavne nedostatke. Iz tog razloga održivi razvoj i prelazak na obnovljive izvore energije su jedina moguÄa dugoroÄna perspektiva. Fotonaponska (PV) konverzija
sunÄeve energije u tom pogledu predstavlja jednu od najsavremenijih tehnologija koja omoguÄava
primenu PV sistema za razliÄite namene. MeƱutim, kao i drugi izvori energije i PV konverzija ima
odreƱena ograniÄenja koja se u prvom redu odnose na relativno nisku efikasnost PV modula.
Poslednjih godina, u svetskim razmerama, postoji uoÄljivo poveÄanje ulaganja u istraživanja i razvoj fotonaponske konverzije, kako bi se Å”to jeftinije i efikasnije proizvodile PV komponente i time bitno poveÄala njihova primena. U ovom radu prikazane su neke moguÄnosti poveÄanja efikasnosti PV sistema, kako sa stanoviÅ”ta klasiÄnih (poluprovodniÄkih) modula i panela, tako i upotrebe novih materijala
OdreÄivanje temperaturske zavisnosti karakteristika solarnih Äelija merenjima frekventnog Å”uma i faktora idealnosti
Prilikom procesa detekcije zraÄenja uticaj temperature i termiÄki indukovan Å”um u fotodetektorima su veoma znaÄajni. Degradacija elektriÄnih i optiÄkih karakteristika fotodetektora pri poviÅ”enim temperaturama su jedan od glavnih ograniÄavajuÄih faktora za njihovu upotrebu. S obzirom na to da veÄina elektriÄnih procesa u poluprovodniÄkim ureÄajima u manjoj ili veÄoj meri zavisi od temperature, istraživanja na temperaturama viÅ”im od sobne mogu da otkriju moguÄe promene izlaznih karakteristika ureÄaja. Sa tehnoloÅ”kog stanoviÅ”ta, termiÄki izazvan Å”um poveÄava minimalni signal koji može da se detektuje, Å”to je posebno znaÄajno za nisko energetske detektore i detektore nejonizujuÄeg zraÄenja. U ovom radu je uticaj poviÅ”ene temperature prouÄavan preko merenja frekvetno zavisnog Å”uma i osnovnih izlaznih karakteristika solarnih Äelija
Construction of an autogenerator dynamic model applicable to nuclear processes
We propose a new method for constructing a mathematical model of a non-linear system in an auto-oscillation regime. The method is based on the divergence of a vector field having a constant value along the corresponding periodical motion. The variants of the obtained model could be used for describing nuclear processes that are represented by the systems of differential equations analogous to that of the presented model
Simulation-based calculations of the proton dose in phase change memory cells
Monte Carlo simulations of proton irradiation on phase change memory cells were conducted and the proton dose, in both the whole memory cell and in its active layer, calculated. The memory cell was modeled by a multi-layer stack consisting of two TiW electrodes and ZnS-SiO2 films as insulators surrounding the active region. Materials considered for the active region were Ge2Sb2Te5, AgSbSe2, and Si2Sb2Te5. The effects of exposing phase change memory cells to proton beams were investigated for various thicknesses of phase change materials and different proton energies. Radiation-induced changes in the investigated memory cells are presented, including the accumulation of atomic displacements and the thermal heating of the active region. Possible effects of these changes on cell operation are discussed. [Projekat Ministarstva nauke Republike Srbije, br. 171007
- ā¦