New insights in the electronic transport in reduced graphene oxide using Scanning Electrochemical Microscopy

International audienceGraphene and graphene analogues such as GO or reduced-GO (r-GO) are attracting increasing attention from the scientific community. These materials have outstanding properties, so that many potential applications in the fields of electronics, sensors, catalysis and energy storage are being considered. GO combines several advantages such as availability in large quantity, low cost and easy processability. However, contrary to graphene, GO is electronically insulating and has to be reduced into a conductive material, r-GO. In a recent work we introduced a new localized functionalization method of GO deposited on a silicon oxide surface based on its reduction at the local scale thanks to scanning electrochemical microscopy (SECM): the reducer is generated at the microelectrode, that is moved close to the substrate. The recovery of electronic conductivity upon reduction enables the selective electrochemical functionalization of patterns. In the present work, we introduce a new method to evaluate at a local scale the conductivity of r-GO layers with SECM. In addition we show how images of individual and interconnected flakes directly reveal the signature of the contact resistance between flakes in a non-contact and substrate-independent way. Quantitative evaluation of the parameters is achieved with the support of numerical simulations to interpret the experimental results. Overall, these works illustrates the high potential and versatility of SECM to investigate and functionalize 2D materials

Reaction-diffusion and reaction-subdiffusion equations on arbitrarily evolving domains

Reaction-diffusion equations are widely used as the governing evolution equations for modeling many physical, chemical, and biological processes. Here we derive reaction-diffusion equations to model transport with reactions on a one-dimensional domain that is evolving. The model equations, which have been derived from generalized continuous time random walks, can incorporate complexities such as subdiffusive transport and inhomogeneous domain stretching and shrinking. A method for constructing analytic expressions for short time moments of the position of the particles is developed and moments calculated from this approach are shown to compare favourably with results from random walk simulations and numerical integration of the reaction transport equation. The results show the important role played by the initial condition. In particular, it strongly affects the time dependence of the moments in the short time regime by introducing additional drift and diffusion terms. We also discuss how our reaction transport equation could be applied to study the spreading of a population on an evolving interface.Comment: 38 pages, 10 figure