On the first Gaussian map for Prym-canonical line bundles

We prove by degeneration to Prym-canonical binary curves that the first Gaussian map of the Prym canonical line bundle $\omega_C \otimes A$ is surjective for the general point [C,A] of R_g if g >11, while it is injective if g < 12.Comment: To appear in Geometriae Dedicata. arXiv admin note: text overlap with arXiv:1105.447

Nondissipative Addressing for Time-Division SQUID Multiplexing

International audienceRecent and future astronomical instruments are based on a focal plane mapped by a large array of superconducting bolometers. Cryogenic analog multiplexing readout techniques, based on superconducting quantum interference devices (SQUIDs), are currently developed to achieve the readout of large arrays of this kind of low noise background-limited detectors. To effectively reduce the number of cryogenic wires (particularly, SQUID biasing), line/column addressing is currently used in time-division multiplexing, i.e., same biasing is applied to a few SQUIDs (on a line) of different columns. This technique should dramatically increase power consumption if parallel biasing is applied via resistors to isolate each column; the power budget is particularly limited on this kind of front-end cryogenic readout. A design with one transformer per SQUID is also used to read out SQUID biased in series with no excess of consumption and crosstalk. We propose here a new biasing technique using simple surface-mounted capacitors, which is easier to implement. These capacitors are used to parallel bias SQUIDs without additional Joule effect while minimizing crosstalk. However, capacitors do not allow dc biasing and need a current mean value equal to zero to avoid biasing source saturation. We have then tested square current biasing through capacitors on a commercial SQUID. This measurement shows that capacitors are able to proper bias SQUID and then to perform a nondissipative addressing for time-division SQUID multiplexing

Effective algebraic degeneracy

We prove that any nonconstant entire holomorphic curve from the complex line C into a projective algebraic hypersurface X = X^n in P^{n+1}(C) of arbitrary dimension n (at least 2) must be algebraically degenerate provided X is generic if its degree d = deg(X) satisfies the effective lower bound: d larger than or equal to n^{{(n+1)}^{n+5}}

Structural basis for membrane attack complex inhibition by CD59

CD59 is an abundant immuno-regulatory receptor that protects human cells from damage during complement activation. Here we show how the receptor binds complement proteins C8 and C9 at the membrane to prevent insertion and polymerization of membrane attack complex (MAC) pores. We present cryo-electron microscopy structures of two inhibited MAC precursors known as C5b8 and C5b9. We discover that in both complexes, CD59 binds the pore-forming β-hairpins of C8 to form an intermolecular β-sheet that prevents membrane perforation. While bound to C8, CD59 deflects the cascading C9 β-hairpins, rerouting their trajectory into the membrane. Preventing insertion of C9 restricts structural transitions of subsequent monomers and indirectly halts MAC polymerization. We combine our structural data with cellular assays and molecular dynamics simulations to explain how the membrane environment impacts the dual roles of CD59 in controlling pore formation of MAC, and as a target of bacterial virulence factors which hijack CD59 to lyse human cells

Electric-Field Tuning of Spin-Dependent Exciton-Exciton Interactions in Coupled Quantum Wells

We have shown experimentally that an electric field decreases the energy separation between the two components of a dense spin-polarized exciton gas in a coupled double quantum well, from a maximum splitting of $\sim 4$ meV to zero, at a field of $\sim$35 kV/cm. This decrease, due to the field-induced deformation of the exciton wavefunction, is explained by an existing calculation of the change in the spin-dependent exciton-exciton interaction with the electron-hole separation. However, a new theory that considers the modification of screening with that separation is needed to account for the observed dependence on excitation power of the individual energies of the two exciton components.Comment: 5 pages, 4 eps figures, RevTeX, Physical Review Letters (in press

Hot electron cooling by acoustic phonons in graphene

We have investigated the energy loss of hot electrons in metallic graphene by means of GHz noise thermometry at liquid helium temperature. We observe the electronic temperature T / V at low bias in agreement with the heat diffusion to the leads described by the Wiedemann-Franz law. We report on $T\propto\sqrt{V}$ behavior at high bias, which corresponds to a T4 dependence of the cooling power. This is the signature of a 2D acoustic phonon cooling mechanism. From a heat equation analysis of the two regimes we extract accurate values of the electron-acoustic phonon coupling constant $\Sigma$ in monolayer graphene. Our measurements point to an important effect of lattice disorder in the reduction of $\Sigma$, not yet considered by theory. Moreover, our study provides a strong and firm support to the rising field of graphene bolometric detectors.Comment: 5 figure

Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields

We have studied a 50/50\AA superlattice of GaAs/Al$_{0.21}$Ga$_{0.79}$As composition, modulation-doped with Si, to produce $n=1.4\times 10^{12}$ cm$^{-2}$ electrons per superlattice period. The modulation-doping was tailored to avoid the formation of Tamm states, and photoluminescence due to interband transitions from extended superlattice states was detected. By studying the effects of a quantizing magnetic field on the superlattice photoluminescence, the miniband energy width, the reduced effective mass of the electron-hole pair, and the band gap renormalization could be deduced.Comment: minor typing errors (minus sign in eq. (5)

Optical properties of an ensemble of G-centers in silicon

We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. For this point defect in silicon emitting in the telecommunication wavelength range, we unravel the recombination dynamics by time-resolved photoluminescence spectroscopy. More specifically, we performed detailed photoluminescence experiments as a function of excitation energy, incident power, irradiation fluence and temperature in order to study the impact of radiative and non-radiative recombination channels on the spectrum, yield and lifetime of G-centers. The sharp line emitting at 969 meV ($\sim$1280 nm) and the broad asymmetric sideband developing at lower energy share the same recombination dynamics as shown by time-resolved experiments performed selectively on each spectral component. This feature accounts for the common origin of the two emission bands which are unambiguously attributed to the zero-phonon line and to the corresponding phonon sideband. In the framework of the Huang-Rhys theory with non-perturbative calculations, we reach an estimation of 1.6$\pm$0.1 \angstrom for the spatial extension of the electronic wave function in the G-center. The radiative recombination time measured at low temperature lies in the 6 ns-range. The estimation of both radiative and non-radiative recombination rates as a function of temperature further demonstrate a constant radiative lifetime. Finally, although G-centers are shallow levels in silicon, we find a value of the Debye-Waller factor comparable to deep levels in wide-bandgap materials. Our results point out the potential of G-centers as a solid-state light source to be integrated into opto-electronic devices within a common silicon platform

Excitation transfer and luminescence in porphyrin-carbon nanotube complexes

Functionalization of carbon nanotubes with hydrosoluble porphyrins (TPPS) is achieved by "$\pi$-stacking". The porphyrin/nanotube interaction is studied by means of optical absorption, photoluminescence and photoluminescence excitation spectroscopies. The main absorption line of the porphyrins adsorbed on nanotubes exhibits a 120 meV red shift, which we ascribe to a flattening of the molecule in order to optimize $\pi-\pi$ interactions. The porphyrin-nanotube complex shows a strong quenching of the TPPS emission while the photoluminescence intensity of the nanotubes is enhanced when the excitation laser is in resonance with the porphyrin absorption band. This reveals an efficient excitation transfer from the TPPS to the carbon nanotube