673 research outputs found

    Lifetime measurement of the metastable 3d 2D5/2 state in the 40Ca+ ion using the shelving technique on a few-ion string

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    We present a measurement of the lifetime of the metastable 3d 2D5/2 state in the 40Ca+ ion, using the so-called shelving technique on a string of five Doppler laser-cooled ions in a linear Paul trap. A detailed account of the data analysis is given, and systematic effects due to unwanted excitation processes and collisions with background gas atoms are discussed and estimated. From a total of 6805 shelving events, we obtain a lifetime tau=1149+/-14(stat.)+/-4(sys.)ms, a result which is in agreement with the most recent measurements.Comment: 10 pages, 7 figures. Submitted for publicatio

    Permanent genetic memory with >1-byte capacity

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    Genetic memory enables the recording of information in the DNA of living cells. Memory can record a transient environmental signal or cell state that is then recalled at a later time. Permanent memory is implemented using irreversible recombinases that invert the orientation of a unit of DNA, corresponding to the [0,1] state of a bit. To expand the memory capacity, we have applied bioinformatics to identify 34 phage integrases (and their cognate attB and attP recognition sites), from which we build 11 memory switches that are perfectly orthogonal to each other and the FimE and HbiF bacterial invertases. Using these switches, a memory array is constructed in Escherichia coli that can record 1.375 bytes of information. It is demonstrated that the recombinases can be layered and used to permanently record the transient state of a transcriptional logic gate.United States. Defense Advanced Research Projects Agency (DARPA CLIO N66001-12-C-4016)United States. Defense Advanced Research Projects Agency (DARPA CLIO N66001-12-C-4018)United States. Office of Naval Research. Multidisciplinary University Research Initiative (N00014-13-1-0074)National Institutes of Health (U.S.) (GM095765)National Institute of General Medical Sciences (U.S.) (P50 GM098792)National Science Foundation (U.S.). Synthetic Biology Engineering Research Center (SynBERC EEC0540879)FA9550-11-C-0028American Society for Engineering Education. National Defense Science and Engineering Graduate Fellowship (32 CFR 168a

    Permanent genetic memory with >1-byte capacity

    Get PDF
    Genetic memory enables the recording of information in the DNA of living cells. Memory can record a transient environmental signal or cell state that is then recalled at a later time. Permanent memory is implemented using irreversible recombinases that invert the orientation of a unit of DNA, corresponding to the [0,1] state of a bit. To expand the memory capacity, we have applied bioinformatics to identify 34 phage integrases (and their cognate attB and attP recognition sites), from which we build 11 memory switches that are perfectly orthogonal to each other and the FimE and HbiF bacterial invertases. Using these switches, a memory array is constructed in Escherichia coli that can record 1.375 bytes of information. It is demonstrated that the recombinases can be layered and used to permanently record the transient state of a transcriptional logic gate.United States. Defense Advanced Research Projects Agency (DARPA CLIO N66001-12-C-4016)United States. Defense Advanced Research Projects Agency (DARPA CLIO N66001-12-C-4018)United States. Office of Naval Research. Multidisciplinary University Research Initiative (N00014-13-1-0074)National Institutes of Health (U.S.) (GM095765)National Institute of General Medical Sciences (U.S.) (P50 GM098792)National Science Foundation (U.S.). Synthetic Biology Engineering Research Center (SynBERC EEC0540879)FA9550-11-C-0028American Society for Engineering Education. National Defense Science and Engineering Graduate Fellowship (32 CFR 168a

    Potential resolution to the doping puzzle in iron pyrite: Carrier type determination by Hall effect and thermopower

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    Pyrite FeS2 has outstanding potential as an earth-abundant, low-cost, nontoxic photovoltaic, but underperforms dramatically in solar cells. While the full reasons for this are not clear, one certain factor is the inability to understand and control doping in FeS2. This is exemplified by the widely accepted but unexplained observation that unintentionally doped FeS2 single crystals are predominantly n type, whereas thin films are p type. Here we provide a potential resolution to this “doping puzzle,” arrived at via Hall effect, thermopower, and resistivity measurements on a large set of FeS2 single crystals and films that span five orders of magnitude in mobility. The results reveal three main findings. First, in addition to crystals, the highest mobility thin films in this study are shown to be definitively n type, from both Hall effect and thermopower. Second, as mobility decreases an apparent crossover to p type occurs, first in thermopower, then in Hall measurements. This can be understood, however, in terms of the crossover from diffusive to hopping transport that is clearly reflected in resistivity. Third, universal behavior is found for both crystals and films, suggesting a common n dopant, possibly sulfur vacancies. We thus argue that n-type doping is facile in FeS2 films, that apparent p-type behavior in low mobility samples can be an artifact of hopping, and that the prevailing notion of predominantly p-type films must be revised. These conclusions have deep implications, both for interpretation of prior work on FeS2 solar cells and for the design of future studies

    Direct-write fabrication of zinc oxide varistors

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    Zinc oxide (ZnO)-based pastes with tailored rheological properties have been developed for direct-write fabrication of thick-film varistor elements in highly integrated, multifunctional electroceramic devices. Such pastes exhibited pseudoplastic behavior with a low shear apparent viscosity of roughly 1 ؋ 10 4 Pa⅐s. Upon aging, the pastes attained printable, steady-state viscosities of approximately 3 ؋ 10 2 Pa⅐s at 10 s ؊1 . Square and rectangular elements were patterned on dense alumina substrates and sintered at varying temperatures between 800°and 1250°C. Varistor elements fired at 900°C exhibited nonlinearity coefficients (␣ ‫؍‬ 30) that were equivalent to high-density (>95%) varistors formed by cold isostatic pressing at 100 MPa (15 ksi) of a similar chemically derived powder heat-treated under analogous conditions
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