86 research outputs found

    Growth-rate induced epitaxial orientation of CeO2 on Al2O3(0001)

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    High-quality CeO2 films were grown on Al2O3(0001) substrates using oxygen plasma-assisted molecular beam epitaxy. The epitaxial orientation of the films is found to be CeO2(100) and CeO2(111) at low ( \u3c 8 A/min) and higher growth rates ( \u3e 12 A/min), respectively. CeO2(100) film grows as three-dimensional islands, while CeO2(111) film grows as two-dimensional layers. The CeO2(100) film exhibits better epitaxial quality compared to CeO2(111) film. However, the CeO2(100) film on Al2O3(0001) shows three in-plane domains at 30 degrees to each other. While the epitaxial quality is attributed to the close match between oxygen sublattices of CeO2(100) and Al2O3(0001), the three in-plane domains in CeO2(100) are attributed to the threefold symmetry of the substrate. The relative stability of different epitaxial orientations of CeO2 films on Al2O3(0001) obtained from molecular dynamics simulations strongly supports the experimental observations

    Reaction Chemistry and Kinetics of Corn Stalk Pyrolysis without and with Ga/HZSM-5

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    The bifunctional Ga/HZSM-5 catalyst has been proven having the capability to increase the selectivity of aromatics production during catalytic pyrolysis of furan and woody biomass. However, the reaction chemistry and kinetics of pyrolysis of herbaceous biomass promoted by Ga/HZSM-5 is rarely reported. Pyrolysis–gas chromatography/mass spectrometry (Py–GC/MS) analysis and non-isothermal thermogravimetric analysis at four heating rates were carried out to investigate the decomposition behavior and pyrolysis kinetics of corn stalk without and with Ga/HZSM-5. The effective activation energies for corn stalk pyrolysis were calculated by using the Friedman isoconversional method. The Py–GC/MS analysis results indicated that the Ga/HZSM-5 catalyst had a high selectivity toward producing the aromatic chemicals of xylene, toluene and benzene, whereas the major products from non-catalytic pyrolysis of corn stalk were oxygenated compounds. The presence of Ga/HZSM-5 could significantly reduce the effective activation energies of corn stalk pyrolysis from 159.9–352.4 kJ mol−1 to 41.6–99.8 kJ mol−1 in the conversion range of 0.10–0.85

    Oxygen Pressure-Tuned Epitaxy and Optoelectronic Properties of Laser-Deposited ZnO Films on Sapphire

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    Influence of oxygen pressure on the epitaxy, surface morphology, and optoelectronic properties has been studied in the case of ZnO thin films grown on sapphire ~0001! by pulsed-laser deposition. Results of Rutherford backscattering and ion channeling in conjunction with atomic force microscopy clearly indicate that the growth mode, degree of epitaxy, and the defect density strongly depend on the oxygen background pressure during growth. It is also found that the growth mode and the defects strongly influence the electron mobility, free-electron concentration, and the luminescence properties of the ZnO films. By tuning the oxygen pressure during the initial and the final growth stages, smooth and epitaxial ZnO films with high optical quality, high electron mobility, and low background carrier concentration have been obtained. The implication of these results towards the fabrication of superlattices and controlled n- and p-type doping is discussed
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