Onsager model for a variable dielectric permittivity near an interface

Using a generalisation of an Onsager type approach, we are able to predict a dielectric permittivity profile of an inhomogeneous dipolar fluid in the presence of a dielectric interface. The reaction and cavity fields are calculated semi-analytically using bispherical coordinates. An asymptotic expression for the local permittivity is derived as a function of distance from the interface.Comment: 20 pages, 4 figures, submitted to Molecular Physic

Radiation effects on CMOS image sensors with sub-2µm pinned photodiodes

A group of four commercial sensors with pixel pitches below 2μm has been irradiated with 60Co source at several total ionizing dose levels related to space applications. A phenomenological approach is proposed through behavior analysis of multiple sensors embedding different technological choices (pitch, isolation or buried oxide). A complete characterization including dark current, activation energy and temporal noise analysis allows to discuss about a degradation scheme

Absolute Single Ion Thermometry

We describe and experimentally implement a single-ion local thermometry technique with absolute sensitivity adaptable to all laser-cooled atomic ion species. The technique is based on the velocity-dependent spectral shape of a quasi-dark resonance tailored in a J $\rightarrow$ J transition such that the two driving fields can be derived from the same laser source leading to a negligible relative phase shift. We validated the method and tested its performances in an experiment on a single 88 Sr + ion cooled in a surface radio-frequency trap. We first applied the technique to characterise the heating-rate of the surface trap. We then measured the stationary temperature of the ion as a function of cooling laser detuning in the Doppler regime. The results agree with theoretical calculations, with an absolute error smaller than 100 $\mu$K at 500 $\mu$K, in a temperature range between 0.5 and 3 mK and in the absence of adjustable parameters. This simple-to-implement and reliable method opens the way to fast absolute measurements of single-ion temperatures in future experiments dealing with heat transport in ion chains or thermodynamics at the single-ion level

Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode

1.4μm pixel pitch CMOS Image sensors based on hole collection pinned photodiode (HPD) have been irradiated with 60Co source. The HPD sensors exhibit much lower dark current degradation than equivalent commercial sensors using an Electron collection Pinned Photodiode (EPD). This hardness improvement is mainly attributed to carrier accumulation near the interfaces induced by the generated positive charges in dielectrics. The pre-eminence of this image sensor based on hole collection pinned photodiode architectures in ionizing environments is demonstrated

Radiation Effects on CMOS Image Sensors With Sub-2 µm Pinned Photodiodes

CMOS image sensor hardness under irradiation is a key parameter for application fields such as space or medical. In this paper, four commercial sensors featuring different technological characteristics (pitch, isolation or buried oxide) have been irradiated with 60Co source. Based on dark current and temporal noise analysis, we develop and propose a phenomenological model to explain pixel performance degradation

Outil d’aide à la décision pour élus communaux VS-OADE

La Fondation pour Développement Durable des régions de Montagne (FDDM) par M. Eric Nanchen et le professeur Jean-Pierre Rey m’ont demandé de réaliser un programme d’aide à la décision pour les élus communaux. Au cours de ce travail, une première phase de recherches et analyses a été réalisée pour déterminer les technologies et les architectures Web les plus adaptées pour ce projet, tout en tenant compte d’une possible intégration future de l’outil dans les systèmes d’information des communes. Une recherche sur les possibilités d’hébergement de l’outil et le stockage des données a également été effectuée durant cette phase. Dans une seconde phase, les environnements de développement ont été analysés et celui qui semblait le plus adapté pour ce travail a été mis en place dans l’optique de développer au mieux l’outil. Cette phase a été utile pour développer l’application localement en simulant une infrastructure Client-Serveur. Cette dernière peut facilement être configurée et mise en place pour l’utilisation de l’outil par la suite

Neurotensin receptors (version 2019.4) in the IUPHAR/BPS Guide to Pharmacology Database

Neurotensin receptors (nomenclature as recommended by NC-IUPHAR [38]) are activated by the endogenous tridecapeptide neurotensin (pGlu-Leu-Tyr-Glu-Asn-Lys-Pro-Arg-Arg-Pro-Tyr-Ile-Leu) derived from a precursor (NTS, 30990), which also generates neuromedin N, an agonist at the NTS2 receptor. [3H]neurotensin (human, mouse, rat) and [125I]neurotensin (human, mouse, rat) may be used to label NTS1 and NTS2 receptors at 0.1-0.3 and 3-5 nM concentrations respectively

Neurotensin receptors in GtoPdb v.2023.1

Neurotensin receptors (nomenclature as recommended by NC-IUPHAR [39]) are activated by the endogenous tridecapeptide neurotensin (pGlu-Leu-Tyr-Glu-Asn-Lys-Pro-Arg-Arg-Pro-Tyr-Ile-Leu) derived from a precursor (NTS, 30990), which also generates neuromedin N, an agonist at the NTS2 receptor. [3H]neurotensin (human, mouse, rat) and [125I]neurotensin (human, mouse, rat) may be used to label NTS1 and NTS2 receptors at 0.1-0.3 and 3-5 nM concentrations respectively