140 research outputs found
Electrically active defects in polycrystalline and single crystal metal halide perovskite
We studied electrically active defects in CsPbBr3 polycrystalline films and single crystals samples using the thermally stimulated currents (TSC) technique in the temperature range 100–400 K. Below room temperature, both polycrystalline and single-crystals TSC emission is composed by a quasi-continuum of energy levels in the range 0.1–0.3 eV, and capture cross sections ~10−21 cm2. Above room temperature, TSC analysis reveals the presence of defect states in the range 0.40–0.52 eV only in polycrystalline samples, whereas these intermediate energy states are absent in TSC detected in single crystals. In polycrystalline films, the occupancy changes of an energy level at 0.45 eV strongly influences the room temperature photoconductivity, giving rise to slow transients due to defect passivation. In single-crystals, where intermediate energy states are absent, the photoconductivity response during illumination is almost stable and characterized by fast rise/decay times, a promising result for future applications of this material in photodetection and dosimetry
Optical orientation of electron spins in GaAs quantum wells
We present a detailed experimental and theoretical analysis of the optical
orientation of electron spins in GaAs/AlAs quantum wells. Using time and
polarization resolved photoluminescence excitation spectroscopy, the initial
degree of electron spin polarization is measured as a function of excitation
energy for a sequence of quantum wells with well widths between 63 Ang and 198
Ang. The experimental results are compared with an accurate theory of excitonic
absorption taking fully into account electron-hole Coulomb correlations and
heavy-hole light-hole coupling. We find in wide quantum wells that the measured
initial degree of polarization of the luminescence follows closely the spin
polarization of the optically excited electrons calculated as a function of
energy. This implies that the orientation of the electron spins is essentially
preserved when the electrons relax from the optically excited high-energy
states to quasi-thermal equilibrium of their momenta. Due to initial spin
relaxation, the measured polarization in narrow quantum wells is reduced by a
constant factor that does not depend on the excitation energy.Comment: 12 pages, 9 figure
Electrical and Optical Characterization of CsPbCl3 Films around the High-Temperature Phase Transitions
Large-area CsPbCl(3) films in the range 0.1–1.5 μm have been grown by radio frequency (RF)-magnetron sputtering on glass substrates by means of a one-step procedure. Three structural phase transitions have been detected, which are associated with hysteresis behavior in the electrical current when measured as a function of temperature in the range 295–330 K. Similarly, photoluminescence (PL) experiments in the same temperature range bring evidence of a non-monotonic shift of the PL peak. Detailed electrical characterizations evidenced how phase transitions are not influencing detrimentally the electrical transport properties of the films. In particular, the activation energy (0.6–0.8 eV) extracted from the temperature-dependent film resistivity does not appear to be correlated with phase changes. A non-linear trend of the photoconductivity response as a function of a ultra violet (UV) 365 nm light emitting diode (LED) power has been interpreted considering the presence of an exponential tail of intragap defects. Thermally stimulated currents after exposure with the same LED measured from room temperature up to 370 K showed no evidence of trapping effects due to intragap states on the electrical transport properties at room temperature of the films. As a consequence, measured photocurrents at room temperature appear to be well reproducible and stable in time, which are attractive features for possible future applications in photodetection
Large K-exciton dynamics in GaN epilayers: the non-thermal and thermal regime
We present a detailed investigation concerning the exciton dynamics in GaN
epilayers grown on c-plane sapphire substrates, focussing on the exciton
formation and the transition from the nonthermal to the thermal regime. The
time-resolved kinetics of LO-phonon replicas is used to address the energy
relaxation in the excitonic band. From ps time-resolved spectra we bring
evidence for a long lasting non-thermal excitonic distribution which accounts
for the rst 50 ps. Such a behavior is con rmed in di erent experimental
conditions, both when non-resonant and resonant excitation are used. At low
excitation power density the exciton formation and their subsequent
thermalization is dominated by impurity scattering rather than by acoustic
phonon scattering. The estimate of the average energy of the excitons as a
function of delay after the excitation pulse provides information on the
relaxation time, which describes the evolution of the exciton population to the
thermal regime.Comment: 9 pages,8 figure
Characterization of the Response of Magnetron Sputtered In2O3−x Sensors to NO2
The response of resistive In2O3−x sensing devices was investigated as a function of the NO2 concentration in different operative conditions. Sensing layers are 150 nm thick films manufactured by oxygen-free room temperature magnetron sputtering deposition. This technique allows for a facile and fast manufacturing process, at same time providing advantages in terms of gas sensing performances. The oxygen deficiency during growth provides high densities of oxygen vacancies, both on the surface, where they are favoring NO2 absorption reactions, and in the bulk, where they act as donors. This n-type doping allows for conveniently lowering the thin film resistivity, thus avoiding the sophisticated electronic readout required in the case of very high resistance sensing layers. The semiconductor layer was characterized in terms of morphology, composition and electronic properties. The sensor baseline resistance is in the order of kilohms and exhibits remarkable performances with respect to gas sensitivity. The sensor response to NO2 was studied experimentally both in oxygen-rich and oxygen-free atmospheres for different NO2 concentrations and working temperatures. Experimental tests revealed a response of 32%/ppm at 10 ppm NO2 and response times of approximately 2 min at an optimal working temperature of 200 °C. The obtained performance is in line with the requirements of a realistic application scenario, such as in plant condition monitoring
Spin Injection and Relaxation in Ferromagnet-Semiconductor Heterostructures
We present a complete description of spin injection and detection in
Fe/Al_xGa_{1-x}As/GaAs heterostructures for temperatures from 2 to 295 K.
Measurements of the steady-state spin polarization in the semiconductor
indicate three temperature regimes for spin transport and relaxation. At
temperatures below 70 K, spin-polarized electrons injected into quantum well
structures form excitons, and the spin polarization in the quantum well depends
strongly on the electrical bias conditions. At intermediate temperatures, the
spin polarization is determined primarily by the spin relaxation rate for free
electrons in the quantum well. This process is slow relative to the excitonic
spin relaxation rate at lower temperatures and is responsible for a broad
maximum in the spin polarization between 100 and 200 K. The spin injection
efficiency of the Fe/Al_xGa_{1-x}As Schottky barrier decreases at higher
temperatures, although a steady-state spin polarization of at least 6 % is
observed at 295 K.Comment: 3 Figures Submitted to Phys. Rev. Let
Spin flip from dark to bright states in InP quantum dots
We report measurements of the time for spin flip from dark (non-light
emitting) exciton states in quantum dots to bright (light emitting) exciton
states in InP quantum dots. Dark excitons are created by two-photon excitation
by an ultrafast laser. The time for spin flip between dark and bright states is
found to be approximately 200 ps, independent of density and temperature below
70 K. This is much shorter than observed in other quantum dot systems. The rate
of decay of the luminescence intensity, approximately 300 ps, is not simply
equal to the radiative decay rate from the bright states, because the rate of
decay is limited by the rate of conversion from dark excitons into bright
excitons. The dependence of the luminescence decay time on the spin flip time
is a general effect that applies to many experiments.Comment: 3 figure
Nonlinear optical tuning of photonic crystal microcavities by near-field probe
We report on a nonlinear way to control and tune the dielectric environment of photonic crystalmicrocavities exploiting the local heating induced by near-field laser excitation at differentexcitation powers. The temperature gradient due to the optical absorption results in an index ofrefraction gradient which modifies the dielectric surroundings of the cavity and shifts the opticalmodes. Reversible tuning can be obtained either by changing the excitation power density or byexciting in different points of the photonic crystal microcavity
Quantum Noise and Polarization Fluctuations in Vertical Cavity Surface Emitting Lasers
We investigate the polarization fluctuations caused by quantum noise in
quantum well vertical cavity surface emitting lasers (VCSELs). Langevin
equations are derived on the basis of a generalized rate equation model in
which the influence of competing gain-loss and frequency anisotropies is
included. This reveals how the anisotropies and the quantum well confinement
effects shape the correlations and the magnitude of fluctuations in ellipticity
and in polarization direction. According to our results all parameters used in
the rate equations may be obtained experimentally from precise time resolved
measurements of the intensity and polarization fluctuations in the emitted
laser light. To clarify the effects of anisotropies and of quantum well
confinement on the laser process in VCSELs we therefore propose time resolved
measurements of the polarization fluctuations in the laser light. In
particular, such measurements allow to distinguish the effects of frequency
anisotropy and of gain-loss anisotropy and would provide data on the spin
relaxation rate in the quantum well structure during cw operation as well as
representing a new way of experimentally determinig the linewidth enhancement
factor alpha.Comment: 16 pages and 3 Figures, RevTex, to be published in Phys. Rev.
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