28 research outputs found

    C2H2GeI2 1,1-Diiodogermacycloprop-2-ene

    No full text

    C2H3Cl3Si Trichloro(ethenyl)silane

    No full text

    C2H12B10 1,2-Dicarba-closo-dodecaborane(12)

    No full text

    C2H4Cl4Si2 1,1,3,3-Tetrachloro-1,3-disilacyclobutane

    No full text

    C2H6N2O N-Nitrosodimethylamine

    No full text

    Spin polarized Fermi surface, hole doping and band gap in graphene with boron impurities

    No full text
    Embedding foreign atoms in graphene and interchanging the underlying substrate are proved to be efficient methods for manipulating the properties of graphene. Combining ARPES experiments with DFT calculations we show that boron-doped graphene (B-graphene) grown on a Co(0001) substrate by chemical vapor deposition (CVD) becomes hole doped and its Fermi surface near the K-point reveals strongly spin-polarized states. The latter stems from the spin-polarized mini Dirac cone that is an intrinsic two-dimensional feature of the graphene/Co(0001) interface and is formed by a mixture of C 2pz and Co 3d states. Since the CVD method allows the achievement of up to 20 at% of incorporated B atoms, this provides a certain flexibility for handling the spin-polarized properties of the system. We also show that the bonding of the B-graphene layer to the Co(0001) substrate can be released by intercalation of Li into the interface. This allows the exploration of the doping effect in detail. Finally, our ARPES data indicate a gap opening in the Dirac cone as a result of the highly unbalanced boron concentrations in the two graphene sublattices.We thank Helmholtz-Zentrum Berlin (HZB) for the allocation of synchrotron radiation beamtimes at the Russian-German and UE112-PGM1 beamlines. The work was financially supported by the joint project of the Russian Science Foundation (Grant No. 16-42-01093) and the DFG (Grant No. LA655-17/1).Peer reviewe
    corecore