49 research outputs found

    Sewers : rehabilitation and new construction : repair and renovation /

    No full text
    This, the first of two volumes, gives a comprehensive treatment of the civil engineering work relating to sewers and emphasises the practical aspects of repair and renovation. A considerable amount of theoretical work already exists on this subject. However this book is unique in meeting the engineer's need for up-to-date information on the application of theory and incorporates some important recent developments in the field. The technical aspects of survey and access are dealt with in some detail and the book also provides fundamental data on hydraulics, structural assessment and the use of the Wallingford Storm Sewer Package.This, the first of two volumes, gives a comprehensive treatment of the civil engineering work relating to sewers and emphasises the practical aspects of repair and renovation. A considerable amount of theoretical work already exists on this subject. However this book is unique in meeting the engineer's need for up-to-date information on the application of theory and incorporates some important recent developments in the field. The technical aspects of survey and access are dealt with in some detail and the book also provides fundamental data on hydraulics, structural assessment and the use of the Wallingford Storm Sewer Package.The development of public health engineering * Development of the national sewerage network * The problems of sewerage dereliction * Planning Sewerage Rehabilitation and maintenance * Sewer surveys * Traffic management and public relations * Access * Hydraulic assessment * Ancillary works -- cleaning and overpumping * Repair and renovation * Localised repair techniques for non-man-entry sewers * Structural aspects of sewer rehabilitation * Assessment of renovation techniques and costs * Storm water overflows * Contract strategy * Construction management * Site supervision * Sewer repair and renovation in Japan * Development and Research.Includes bibliographical references and index.pt. 1. Repair and renovation.Print version record.Elsevie

    Control of the reactivity at a metal/silica interface

    No full text
    International audienceThe reactivity at the Mo/SiO2 interface is studied as a function of the method of preparation of the silica layer. Three preparation methods for the silicon substrate are considered: plasma-enhanced chemical vapor deposition, and wet and dry thermal oxidations. Respective hydrogen contents in the silica layer of 3.4, 0.5, and 0.4 at. % are induced. We report on the formation of molybdenum silicides (MoSi2 and Mo5Si3) at the Mo/SiO2 interfaces from an x-ray emission spectroscopy study of the interfacial Si 3p occupied valence states. The interfacial reactivity increases with the hydrogen content of the silica film, which is explained by the ease with which the Si-H bonds break during the early stage of the deposition of the metal by cathodic sputtering. (c) 2005 American Institute of Physics

    Characterization of wastewater sludges for ultimate disposal

    No full text
    54 p.During the Project, ninety-two digested and dewatered sludge samples were taken from four representative MOE Sewage Treatment Works and characterized with respect to potential for incineration. Analysis of the samples included solids content (total dry solids and volatile solids) and calorific value. Sludge handling and treatment operations during the sampling period were also monitored.RP 02/8

    Broadband infrared emission from Er-Tm : Al2O3 thin films

    No full text
    International audienceThin films of amorphous aluminum oxide (Al2O3) co-doped with Er3+ and Tm3+ have been synthesized by alternate pulsed laser deposition. When pumped at 794 nm a broad emission band over 1400-1700 nm is observed. Two peaks related to the 1540 nm band from Er3+ and to the 1640 nm band from Tm3+ are clearly distinguished. The photoluminescence intensity ratio of the 1640-1540 nm emissions has been controlled by modifying the Tm concentration. A spectrum with a fairly flat profile and a full width at half maximum of 230 nm is obtained for an Er concentration of 7.2x10(19) cm(-3) and a [Tm]/[Er] concentration ratio of 3. It is found that the Er3+ to Tm3+ energy transfer processes play an important role in the definition of the luminescent response. The large width of the emission band and the excellent optical and thermomechanical properties of the Er-Tm co-doped Al2O3 signal this system as a potential candidate for the development of broadband integrated optical amplifiers. (c) 2005 American Institute of Physics

    Characterization of SiC thin film obtained by magnetron reactive sputtering : IBA, IR and Raman studies

    No full text
    International audienceCo-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H-2) at temperatures, T-s, varying from 200° C to 600° C has been used to grow SiC thin films. We report on the influence of T-s on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the C-12(d,p(0))C-13 nuclear reaction and elastic recoil detection analysis (ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As T-s is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries

    Growth of SiO2 on SiC by dry thermal oxidation: mechanisms

    No full text
    International audienceSiC is unique amongst the wide bandgap semiconductors in that the natural thermal oxide is stoichiometric SiO2, as is the case for silicon. The possibility of producing devices such as MOSFET in which thermal SiO2 is used as the gate insulator has motivated substantial work aimed at understanding the morphology and electrical properties of the SiO2/ SiC interface and the processes responsible for thermal oxide growth. The oxide growth kinetics are quite different, parallel and anti- parallel to the crystal polar direction. We review the experimental study of the nature of the thermal oxide grown in ultra- dry oxygen and of the extended interfacial region at the SiO2/ SiC interface on the nominally Si- terminated and C- terminated polar surfaces of hexagonal polytypes of SiC, highlighting how the use of stable isotopic tracing has helped to clarify processes for which kinetics measurements alone do not prove to be sufficiently incisive

    Two and/or three dimensional Au nano-clusters on oxide supports analyzed by high-resolution ion scattering

    No full text
    International audienceThe present study shows that high-resolution medium energy ion scattering (MEIS) can determine the shape and size of two (2D: height below two atomic-layers) and/or three (3D) dimensional nano-clusters of gold, for example, grown on oxide supports. We synthesized a computer program to simulate MEIS spectra from 2D- and/or 3D-clusters approximated by an appropriate analytic function and from underlying substrates. The observed MEIS spectra are well reproduced assuming a partial sphere for 3D-islands. The height, diameter and areal occupation ratios for 2D- and 3D-clusters together with size fluctuation are taken as fitting parameters. The MEIS spectra measured at different scattering geometries allows derivation of a unique solution for the above fitting parameters. The lateral size and its fluctuation determined in such a way agree with those observed by a scanning electron microscope of a field emission type. This paper also presents the initial growth process of gold nano-clusters on reduced TiO2(1 1 0) substrates. (C) 2008 Elsevier B.V. All rights reserved
    corecore