Extraction of the active acceptor concentration in (pseudo-) vertical GaN MOSFETs using the body-bias effect

We report and discuss the performance of an enhancement mode n-channel pseudo-vertical GaN metal oxide semiconductor field effect transistor (MOSFET). The trench gate structure of the MOSFET is uniformly covered with an Al₂O₃ dielectric and TiN electrode material, both deposited by atomic layer deposition (ALD). Normally-off device operation is demonstrated in the transfer characteristics. Special attention is given to the estimation of the active acceptor concentration in the Mg doped body layer of the device, which is crucial for the prediction of the threshold voltage in terms of device design. A method to estimate the electrically active dopant concentration by applying a body bias is presented. The method can be used for both pseudo-vertical and truly vertical devices. Since it does not depend on fixed charges near the channel region, this method is advantageous compared to the estimation of the active doping concentration from the absolute value of the threshold voltage

Replicating Nanostructures on Silicon by Low Energy Ion Beams

We report on a nanoscale patterning method on Si substrates using self-assembled metal islands and low-energy ion-beam irradiation. The Si nanostructures produced on the Si substrate have a one-to-one correspondence with the self-assembled metal (Ag, Au, Pt) nanoislands initially grown on the substrate. The surface morphology and the structure of the irradiated surface were studied by high-resolution transmission electron microscopy (HRTEM). TEM images of ion-beam irradiated samples show the formation of sawtooth-like structures on Si. Removing metal islands and the ion-beam induced amorphous Si by etching, we obtain a crystalline nanostructure of Si. The smallest structures emit red light when exposed to a UV light. The size of the nanostructures on Si is governed by the size of the self-assembled metal nanoparticles grown on the substrate for this replica nanopatterning. The method can easily be extended for tuning the size of the Si nanostructures by the proper choice of the metal nanoparticles and the ion energy in ion-irradiation. It is suggested that off-normal irradiation can also be used for tuning the size of the nanostructures.Comment: 12 pages, 7 figures, regular paper submitted to Nanotechnolog

Local scale invariance and strongly anisotropic equilibrium critical systems

A new set of infinitesimal transformations generalizing scale invariance for strongly anisotropic critical systems is considered. It is shown that such a generalization is possible if the anisotropy exponent \theta =2/N, with N=1,2,3 ... Differential equations for the two-point function are derived and explicitly solved for all values of N. Known special cases are conformal invariance (N=2) and Schr\"odinger invariance (N=1). For N=4 and N=6, the results contain as special cases the exactly known scaling forms obtained for the spin-spin correlation function in the axial next nearest neighbor spherical (ANNNS) model at its Lifshitz points of first and second order.Comment: 4 pages Revtex, no figures, with file multicol.sty, to appear in PR

Multi-particle structure in the Z_n-chiral Potts models

We calculate the lowest translationally invariant levels of the Z_3- and Z_4-symmetrical chiral Potts quantum chains, using numerical diagonalization of the hamiltonian for N <= 12 and N <= 10 sites, respectively, and extrapolating N to infinity. In the high-temperature massive phase we find that the pattern of the low-lying zero momentum levels can be explained assuming the existence of n-1 particles carrying Z_n-charges Q = 1, ... , n-1 (mass m_Q), and their scattering states. In the superintegrable case the masses of the n-1 particles become proportional to their respective charges: m_Q = Q m_1. Exponential convergence in N is observed for the single particle gaps, while power convergence is seen for the scattering levels. We also verify that qualitatively the same pattern appears for the self-dual and integrable cases. For general Z_n we show that the energy-momentum relations of the particles show a parity non-conservation asymmetry which for very high temperatures is exclusive due to the presence of a macroscopic momentum P_m=(1-2Q/n)/\phi, where \phi is the chiral angle and Q is the Z_n-charge of the respective particle.Comment: 22 pages (LaTeX) plus 5 figures (included as PostScript), BONN-HE-92-3

Разработка технологического процесса изготовления опоры двигателя

Выпускная квалификационная работа состоит из 4 разделов. В качестве задания был получен чертёж детали для которой разработан технологический маршрут изготовления. В технологическом разделе даны расчёты и пояснения для обеспечения требований, заданных конструктором. В качестве заготовки выбран круглый прокат алюминиевого сплава Д16Т. В конструкторском разделе спроектировано приспособления для сверления отверстий. В экономическом разделе выполнения расчёт стоимости детали. В разделе социальной ответственности и безопасности жизнедеятельности приведены основные требования для безопасной работы оператора за станком.This work is devoted to creation of technological process of the part "engine bracket" and consist of 4 parts. The first part is considering sequence of machining workpiece, calculation of operational time and cutting conditions. The second part is devoted to special device, which helps drilling accurate holes. The third and the forth parts are economical (where counting of the price is making) and social responsibility (where norms of pollution for workers and environment are calculated)