Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristics

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Optical and Electrical Simulation of 4H-SiC UV Photodetector by Finite Element Method

International audienceThis paper focuses on UV-photodetector simulation. The calculus method description and the physical equations which occur in this model are presented as well as the UV-photodetector structure (p+n--n+ diode). Based on the Finite Element Method the electrical part solves the continuity and Poisson equation, and the optical part solves by Maxwell’s equation, FDTD [1]. Simulation works point out the influence of the p+-type layer on the electrical characteristics such as the current densities versus reverse bias. Indeed, simulation results show the current density increase with the decrease doping concentration or the p+-type layer thickness

Influence on electrical characteristics of the design of 4H-SiC ultraviolet photodetectors: Theoretical analysis and simulations

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Front End Electronics for Radiation Detectors Based on SiC: Application to High Dose per Pulse Charged Particle Beam Current Measurement

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Slow Bloch modes for enhancing the absorption of light in thin films for photovoltaic cells

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Nanophotovoltaics for Photovoltaic

International audienceA review of the different strategies based on nanostructures for light harvesting and increasing the efficiency in next generation solar cells is presented. Recent progress in thin film solar cells, particularly organic solar cells (OSCs), is emphasized. Advances in simulation tools and modeling based on Poisson's equation and the continuity equations, and predicting both optical and electrical properties, are described. Photonic crystals are shown to increase the lifetime of photons in thin film solar cells, and the inclusion of plasmonic metallic nanoparticles (NPs) is shown to enhance the optical field in active materials. Quantum nanowires (NWs) and other quantum structures are also discussed as new paths to improve the efficiency of photovoltaic devices

Effect of low temperature and concentration KOH etching on high aspect ratio silicon structures

In this paper, the effect of low concentrated alkaline solutions etching on texturized silicon structures at low temperatures has been studied. The silicon samples have been previously etched either from regular arrays by HF anodization on prepatterned substrates or by Deep Reactive Ion Etching (DRIE). After immersion in a low concentrated potassium hydroxide (KOH) solution mixed with isopropyl alcohol (IPA), the quality of the silicon sidewalls has been improved by an anisotropic etching. Thus, the trenches wall surface has been smoothed and planed.Peer reviewe