A neural probe with up to 966 electrodes and up to 384 configurable channels in 0.13 μm SOI CMOS

In vivo recording of neural action-potential and local-field-potential signals requires the use of high-resolution penetrating probes. Several international initiatives to better understand the brain are driving technology efforts towards maximizing the number of recording sites while minimizing the neural probe dimensions. We designed and fabricated (0.13-μm SOI Al CMOS) a 384-channel configurable neural probe for large-scale in vivo recording of neural signals. Up to 966 selectable active electrodes were integrated along an implantable shank (70 μm wide, 10 mm long, 20 μm thick), achieving a crosstalk of −64.4 dB. The probe base (5 × 9 mm2) implements dual-band recording and a 1

Time Multiplexed Active Neural Probe with 1356 Parallel Recording Sites

We present a high electrode density and high channel count CMOS (complementary metal-oxide-semiconductor) active neural probe containing 1344 neuron sized recording pixels (20 µm × 20 µm) and 12 reference pixels (20 µm × 80 µm), densely packed on a 50 µm thick, 100 µm wide, and 8 mm long shank. The active electrodes or pixels consist of dedicated in-situ circuits for signal source amplification, which are directly located under each electrode. The probe supports the simultaneous recording of all 1356 electrodes with sufficient signal to noise ratio for typical neuroscience applications. For enhanced performance, further noise reduction can be achieved while using half of the electrodes (678). Both of these numbers considerably surpass the state-of-the art active neural probes in both electrode count and number of recording channels. The measured input referred noise in the action potential band is 12.4 µVrms, while using 678 electrodes, with just 3 µW power dissipation per pixel and 45 µW per read-out channel (including data transmission)

NANOTRIBOLOGICAL AND NANOMECHANICAL CHARACTERIZATIONS OF MEMS MATERIALS

FIRST Post-Doc n° 616365 (MOMIVAL

2D micro-chamber for DC plasma working at low power

status: publishe

Fabrication of Active Microfluidics on Glass with Semiconductor Grade Material

status: publishe

Photoacoustic raster scan imaging using an optomechanical ultrasound sensor in silicon photonics

Photoacoustic tomography defines new challenges for ultrasound detection compared to ultrasonography. To address these challenges, a sensitive, small, scalable, and broadband optomechanical ultrasound sensor (OMUS) has been developed. The OMUS is an on-chip optical ultrasound sensor, using optical interferometric ultrasound detection. It consists of an acoustic membrane on top of an optical ring resonator that modulates the optical ring resonance with high efficiency enabled by an innovative optomechanical waveguide. Raster scanning photoacoustic tomography has been demonstrated with a single-element OMUS. Based on performance and form factor, the OMUS combined with passive optical multiplexing may enable new applications in photoacoustic imaging.</p

Design of a micro-opto-mechanical ultrasound sensor for photoacoustic imaging

Optical ultrasound sensing is a promising technique for the emerging field of biomedical photoacoustic imaging. Previously at imec, micro-opto-mechanical sensors with integrated Mach-Zehnder interferometers were designed and demonstrated as highly sensitive for static pressure sensing. At quasi-static pressures, they are demonstrated to operate as a sensitive microphone. In this study, the application range is extended to include dynamic pressures targeting a proof of concept for a photoacoustic imaging application. To achieve this, the dynamic behavior of the pressure sensor is firstly characterized, showing its resonance frequency at 73.8 kHz. Since this is below the range desired in photoacoustic imaging, several approaches for resonance frequency increase are investigated, resulting positively for incomplete membrane release and new designs. These approaches are analyzed based on the evaluated sensor sensitivity, allowing the selection of optimal design. The mentioned evaluation of sensor sensitivity is possible due to a developed methodology based on measurement data, analytical and accurate acousto-mechanical finite element models. The developed methodology is demonstrated throughout a range of membrane sizes, frequencies and modes of vibration allowing the selection of maximum sensitivity design. In this study, a micro-opto-mechanical ultrasound sensor based on integrated Mach-Zehnder interferometer is designed for 1 MHz operation in a photoacoustic imaging environment and optimized for sensitivity.status: publishe

Photoacoustic raster scan imaging using an optomechanical ultrasound sensor in silicon photonics

Photoacoustic tomography defines new challenges for ultrasound detection compared to ultrasonography. To address these challenges, a sensitive, small, scalable, and broadband optomechanical ultrasound sensor (OMUS) has been developed. The OMUS is an on-chip optical ultrasound sensor, using optical interferometric ultrasound detection. It consists of an acoustic membrane on top of an optical ring resonator that modulates the optical ring resonance with high efficiency enabled by an innovative optomechanical waveguide. Raster scanning photoacoustic tomography has been demonstrated with a single-element OMUS. Based on performance and form factor, the OMUS combined with passive optical multiplexing may enable new applications in photoacoustic imaging.Micro-optics and Optomechatronic

Sensitive optomechanical ultrasound sensor in a silicon photonic chip towards single-shot photoacoustic imaging with an ultrasound sensor matrix

We propose a new opto-mechanical ultrasound sensor (OMUS) enabled by an innovative silicon photonics waveguide. We present experimental results up to 30 MHz, a 10-sensor array proof-of-concept and our latest findings