Introduction of ramp-type technology in HTS quasiparticle injection devices

Injection of quasiparticles with an energy larger than the superconducting gap into a superconducting strip results in breaking of Cooper-pairs and hence the suppression of the superconducting properties. Experiments using planar injection devices made of HTS materials with various barrier materials showed current gains varying from 2 up to 15 at 77 K. By changing the junction size and therefore the superconducting volume the current gain could be increased. A further reduction of the junction volume is very difficult using the planar device geometry. However, by applying the ramp-type technology it is possible to reduce the junction volume by at least one order of magnitude and a further increase in current gain is expected. Another advantage of this technology is the formation of in-situ barriers and electrodes and hence a better control of the junction characteristics should be possible, also the compatibility with the processes involved making RSFQ devices can be interesting for later applications. We have fabricated ramp-type injection devices, using various types of barriers. Characterization of these devices has been performed and the results of these experiments will be presented and discussed

Sensitivity enhancement in evanescent optical waveguidesensors

It is shown, that the sensitivity of the effective refractive index on the cladding index in evanescent optical waveguide sensors, can be larger than unity. This implies that the attenuation of a guided wave propagating in a waveguide immersed in an absorptive medium can be made larger than that of a free-space wave propagating through the same medium. The conditions and physical explanation for this puzzling behavior are identified and as a practical application, an absorption sensor, based on a suspended silicon slab waveguide, is proposed where the sensitivity is enhanced by a factor of 1.3

Preparation and properties of all high Tc SNS-type edge DC SQUIDs

High-Tc SNS-type Josephson junctions and DC SQUIDs were successfully fabricated using hetero-epitaxially grown multilayers of YBa2Cu3Ox and PrBa2 Cu3O. These layers are c-axis oriented, and hence edges of the multilayers give rise to a current flow in the ab-plane between the electrodes of a Josephson junction. The necessary structuring was done by Ar ion beam etching. The individual junctions exhibit a supercurrent up to 80 K. The IcRn product of these junctions usually has a lower limit of 8 mV at 4.2 K. Voltage modulation of the first DC SQUIDs can be observed up to 66 K. The voltage modulation for various bias currents investigated at 4.2 K noise measurements were performed. Details on the fabrication and measurements are presente

Nanomechanical optical devices fabricated with aligned wafer bonding

This paper reports on a new method for making some types of integrated optical nanomechanical devices. Intensity modulators as well as phase modulators were fabricated using several silicon micromachining techniques, including chemical mechanical polishing and aligned wafer bonding. This new method enables batch fabrication of the nanomechanical optical devices, and enhances their performance

Device equivalence in integrated optics

The concept of device equivalence is introduced. In equivalent devices, the light propagation can be described by identically evolving modal expansions, resulting in identical power transfer ratios. By first applying this concept to a z-invariant structure with a low refractive-index contrast it is shown how a normalized coordinate space can be defined in which equivalent structures have exactly the same geometry. Subsequently it is shown how this normalized coordinate space can be defined for z-variant integrated optical devices, again provided that the lateral refractive-index contrast is small. This normalization makes it possible to perform numerical device simulations in normalized coordinate space, the results being applicable to a large set of equivalent devices. Furthermore, starting from a known design, it simplifies redesigning that device for use at another wavelength or using other materials significantly, the resulting device being equivalent to the original on

Assessing Drivers of Coastal Primary Production in Northern Marguerite Bay, Antarctica

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Normalized Analysis for the Sensitivity Optimization of Integrated Optical Evanescent-Wave Sensors

Closed-form analytical expressions and normalized charts provide the conditions for the maximum sensitivity of transverse electric (TE) and transverse magnetic (TM) evanescent-wave step-index waveguide sensors. The analysis covers both cases where the measurand is homogeneously distributed in the semi-infinite waveguide cover, and where it is an ultrathin film at the waveguide-cover interfac