Childhood Maltreatment Predictors of Trait Impulsivity

This chapter provides a summary of empirical evidence linking childhood maltreatment and trait impulsivity. While biological contributors to impulsivity may be substantial, this review speculates that childhood and adolescent contributors may potentially alter the developmental trajectory of this personality trait in important ways. An analysis of original data (N = 401) regarding child maltreatment associations (childhood sexual abuse, physical abuse, sibling abuse, peer bullying, corporal punishment, and exposure to domestic violence) with trait impulsivity as measured by the Personality Inventory for the DSM-5 was also conducted. Adult respondents were assigned to extreme child abuse categories based on their retrospective self-reports. Co-occurrence rates for the various forms of maltreatment were modest (around 10%). While childhood sexual abuse was more closely associated with adult impulsivity among the men than the women, gender differences in these maltreatment relationships were otherwise minimal. Extreme childhood sexual abuse was a significant predictor of trait impulsivity and all other facets of the PID-5 Disinhibition domain (ds ranging from .52 to .80). Adult impulsivity was predicted by both childhood physical abuse (ds ranging from .23 to .28) and exposure to domestic violence during childhood (ds ranging from .21 to .32). The relative risk of adult respondents showing an elevation (\u3e 1.5 SDs) in trait Impulsivity was raised substantially by childhood histories of extreme sexual abuse (RR = 8.68), physical abuse (RR = 3.31), or exposure to parental domestic violence (RR = 4.08). Higher order interactions between these various forms of childhood maltreatment and Impulsivity were not found. The developmental psychopathology implications of these findings are discussed along with suggested directions for future research

Gallium and Indium Alkoxides with Hydride, Cyclopentadienediide and Copper(I) tert-Butoxide as further Components

Gallium hydride stabilized by the base quinonuclidine reacts with acetone under addition of the Ga-H function to the carbon–oxygen double bond yielding (HGa)5(OiPr)8O (1) as isolable compound. (HGa)5(OiPr)8O may be formally split in to four entities of HGa(OiPr)2 and one entity HGaO. The inner atomic skeleton of 1 is a novel Ga5O9 heterocluster with gallium atoms occupying the corners of a distorted trigonal bi-pyramid, an oxygen atom in the center and the remaining alcoholate oxygen atoms bridging eight of the nine edges of the bi-pyramid (X-ray diffraction analysis). Potassium indium alkoxide KIn(OtBu)4 has been used to synthesize several new compounds like In4(OtBu)8(C5H4)2 (2), (py)2CuIn(OtBu)4 (3), and [CuIn(OtBu)4]2 (4) by reaction with TiCl2cp2 (2) and CuCl (3, 4). All compounds were characterized by spectroscopic means and by X-ray structure analyses revealing novel polycyclic structures. © 2019 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA

Effective passivation of crystalline silicon surfaces by ultrathin atomic-layer-deposited TiOx layers

We characterize the surface passivation properties of ultrathin titanium oxide (TiOx) films deposited by atomic layer deposition (ALD) on crystalline silicon by means of carrier lifetime measurements. We compare different silicon surface treatments prior to TiOx deposition, such as native silicon oxide (SiOy), chemically grown SiOy and thermally grown SiOy. The best passivation quality is achieved with a native SiOy grown over 4 months and a TiOx layer thickness of 5 nm, resulting in an effective lifetime of 1.2 ms on 1.3 Ωcm p-type float-zone silicon. The measured maximum lifetime corresponds to an implied open-circuit voltage (iVoc) of 710 mV. For thinner TiOx layers the passivation quality is reduced, however, samples passivated with only 2 nm of TiOx still show a lifetime of 612 μs and an iVoc of 694 mV. The contact resistivity of the TiOx including the SiOy interlayer between the silicon wafer and the TiOx is below 0.8 Ωcm2. The combination of excellent surface passivation and low contact resistivity has the potential for silicon solar cells with efficiencies exceeding 26%

Minimal-invasiver Zugang für EVAR: Chirurgisch oder rein interventionell?

Zusammenfassung: Komplikationen kommen sowohl beim rein chirurgischen als auch rein interventionellen (perkutanen) Gefäßzugang nicht selten vor. Sie beinhalten eine nicht zu unterschätzende Morbidität und können sogar zum Tod führen. Wir beschreiben eine Technik, die die Vorteile der chirurgisch offenen mit den rein perkutanen Zugangsmethoden kombiniert: die minimale chirurgische Freilegung des Zugangsgefäßes, gefolgt von einer schnellen und sicheren Punktion mittels einer modifizierten, offenen Seldinger-Technik unter direkter taktiler und visueller Kontrolle. Diese einzigartige Kombination verschiedener Techniken erhöht die Sicherheit des Gefäßzugangs derart, dass lokale Komplikationen fast vollständig vermieden werden können. Ökonomische und sicherheitsrelevante Betrachtungen werden diskutiert, abgerundet durch einen ausgewogenen Überblick über die Vorteile der verschiedenen Technike