Two Dimensional Quantum Mechanical Modeling of Nanotransistors

Quantization in the inversion layer and phase coherent transport are anticipated to have significant impact on device performance in 'ballistic' nanoscale transistors. While the role of some quantum effects have been analyzed qualitatively using simple one dimensional ballistic models, two dimensional (2D) quantum mechanical simulation is important for quantitative results. In this paper, we present a framework for 2D quantum mechanical simulation of a nanotransistor / Metal Oxide Field Effect Transistor (MOSFET). This framework consists of the non equilibrium Green's function equations solved self-consistently with Poisson's equation. Solution of this set of equations is computationally intensive. An efficient algorithm to calculate the quantum mechanical 2D electron density has been developed. The method presented is comprehensive in that treatment includes the three open boundary conditions, where the narrow channel region opens into physically broad source, drain and gate regions. Results are presented for (i) drain current versus drain and gate voltages, (ii) comparison to results from Medici, and (iii) gate tunneling current, using 2D potential profiles. Methods to reduce the gate leakage current are also discussed based on simulation results.Comment: 12 figures. Journal of Applied Physics (to appear

Diffusive Transport in Quasi-2D and Quasi-1D Electron Systems

Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different states due to efficient scattering with phonons, charged impurities, surface roughness and other electrons, so transport is scattering-limited (diffusive) and well described by the Boltzmann transport equation. In this review, we present the theoretical framework used for the description and simulation of diffusive electron transport in quasi-two-dimensional and quasi-one-dimensional semiconductor structures. Transport in silicon MOSFETs and nanowires is presented in detail.Comment: Review article, to appear in Journal of Computational and Theoretical Nanoscienc

Electrical plasmon detection in graphene waveguides

We present a simple device architecture that allows all-electrical detection of plasmons in a graphene waveguide. The key principle of our electrical plasmon detection scheme is the non-linear nature of the hydrodynamic equations of motion that describe transport in graphene at room temperature and in a wide range of carrier densities. These non-linearities yield a dc voltage in response to the oscillating field of a propagating plasmon. For illustrative purposes, we calculate the dc voltage arising from the propagation of the lowest-energy modes in a fully analytical fashion. Our device architecture for all-electrical plasmon detection paves the way for the integration of graphene plasmonic waveguides in electronic circuits.Comment: 9 pages, 3 figure

Electron mobility in silicon nanowires

The low-field electron mobility in rectangular silicon nanowire (SiNW) transistors was computed using a self-consistent Poisson-Schr\"{o}dinger-Monte Carlo solver. The behavior of the phonon-limited and surface-roughness-limited components of the mobility was investigated by decreasing the wire width from 30 nm to 8 nm, the width range capturing a crossover between two-dimensional (2D) and one-dimensional (1D) electron transport. The phonon-limited mobility, which characterizes transport at low and moderate transverse fields, is found to decrease with decreasing wire width due to an increase in the electron-phonon wavefunction overlap. In contrast, the mobility at very high transverse fields, which is limited by surface roughness scattering, increases with decreasing wire width due to volume inversion. The importance of acoustic phonon confinement is also discussed briefly

Collision duration for polar optical and intervalley phonon scattering

The use of fs laser pulses to excite plasmas in semiconductors has become a major method for studying fast processes. The transition times from the Gamma valley to the satellite X and L valleys are comparable to the reciprocal of the frequency of the phonons involved, bringing into question the use of the standard perturbation-theory approaches. Our aim is to evaluate the time required to emit a phonon, either the intravalley LO or the intervalley, by a nearly-free electron in semiconductors. The leading idea of our work is that the so-called ''collision duration'' is related to the time required to build up correlation between the initial and final state, and then to destroy this correlation as the collision is completed. The calculations are developed using e nonequilibrium Green's function formalism, which allows us to evaluate explicitly the effects of the correlations in time