Spin- and valley-dependent transport through arrays of ferromagnetic silicene junctions

We study ballistic transport of Dirac fermions in silicene through arrays of barriers, of width $d$, in the presence of an exchange field $M$ and a tunable potential of height $U$ or depth $-U$. The spin- and valley-resolved conductances as functions of $U$ or $M$, exhibit resonances away from the Dirac point (DP) and close to it a pronounced dip that becomes a gap when a critical electric field $E_z$ is applied. This gap widens by increasing the number of barriers and can be used to realize electric field-controlled switching of the current. The spin $p_s$ and valley $p_v$ polarizations of the current near the DP increase with $E_z$ or $M$ and can reach 100\% for certain of their values. These field ranges widen significantly by increasing the number of barriers. Also, $p_s$ and $p_v$ oscillate nearly periodically with the separation between barriers or wells and can be inverted by reversing $M$.Comment: 9 pages, 43 figures, to appear in PRB, figure resolutions reduced for siz

Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene

We study the commensurability oscillations in silicene subject to a perpendicular electric field Ez, a weak magnetic field B, and a weak periodic potential V=V0cos(Cy), C=2π/a0 with a0 its period. The field Ez and/or the modulation lift the spin degeneracy of the Landau levels and lead to spin and valley resolved Weiss oscillations. The spin resolution is maximal when the field Ez is replaced by a periodic one Ez=E0cos(Dy), D=2π/b0, while the valley one is maximal for b0=a0. In certain ranges of B values, the current is fully spin or valley polarized. Additional quantum Hall conductivity plateaux arise due to spin and valley intra-Landau-level transitions.FWOMethuselah Foundation of the Flemish GovernmentNSERC (OGP0121756)FAPESPCNP

Hierarchically nanostructured thermoelectric materials: challenges and opportunities for improved power factors

Abstract: The field of thermoelectric materials has undergone a revolutionary transformation over the last couple of decades as a result of the ability to nanostructure and synthesize myriads of materials and their alloys. The ZT figure of merit, which quantifies the performance of a thermoelectric material has more than doubled after decades of inactivity, reaching values larger than two, consistently across materials and temperatures. Central to this ZT improvement is the drastic reduction in the material thermal conductivity due to the scattering of phonons on the numerous interfaces, boundaries, dislocations, point defects, phases, etc., which are purposely included. In these new generation of nanostructured materials, phonon scattering centers of different sizes and geometrical configurations (atomic, nano- and macro-scale) are formed, which are able to scatter phonons of mean-free-paths across the spectrum. Beyond thermal conductivity reductions, ideas are beginning to emerge on how to use similar hierarchical nanostructuring to achieve power factor improvements. Ways that relax the adverse interdependence of the electrical conductivity and Seebeck coefficient are targeted, which allows power factor improvements. For this, elegant designs are required, that utilize for instance non-uniformities in the underlying nanostructured geometry, non-uniformities in the dopant distribution, or potential barriers that form at boundaries between materials. A few recent reports, both theoretical and experimental, indicate that extremely high power factor values can be achieved, even for the same geometries that also provide ultra-low thermal conductivities. Despite the experimental complications that can arise in having the required control in nanostructure realization, in this colloquium, we aim to demonstrate, mostly theoretically, that it is a very promising path worth exploring. We review the most promising recent developments for nanostructures that target power factor improvements and present a series of design ‘ingredients’ necessary to reach high power factors. Finally, we emphasize the importance of theory and transport simulations for materialoptimization, and elaborate on the insight one can obtain from computational tools routinely used in the electronic device communities. Graphical abstract: [Figure not available: see fulltext.]