3,796 research outputs found
Eutrophication problems, causes and potential solutions, and exchange of reusable model building components for the integrated simulation of coastal eutrophication. ISECA Final Report D3.2
This report summarizes the stages of coastal and offshore eutrophication, followed by a description of the European indicators and institutional framework for marine eutrophication assessment. A summary is given of a number of biogeochemical models available to describe the process of eutrophication in the North Sea, and the model for atmospheric inputs which was developed in the ISECA project (see the Action 3 Report – Atmospheric Modelling for more details on this work). Furthermore, the report compares different solutions aimed at reducing the nitrogen inputs from the Scheldt basin, using the nitrogen apportionment model which was developed in the EU-FP6 project SPICOSA (www.spicosa.eu). The report is concluded with a discussion on the principles of component-based modelling and model libraries, using examples for the Scheldt model, and a general discussion on some challenges of modelling marine eutrophication
Theory of Magnetic Properties and Spin-Wave Dispersion for Ferromagnetic (Ga,Mn)As
We present a microscopic theory of the long-wavelength magnetic properties of
the ferromagnetic diluted magnetic semiconductor (Ga,Mn)As. Details of the host
semiconductor band structure, described by a six-band Kohn-Luttinger
Hamiltonian, are taken into account. We relate our quantum-mechanical
calculation to the classical micromagnetic energy functional and determine
anisotropy energies and exchange constants. We find that the exchange constant
is substantially enhanced compared to the case of a parabolic heavy-hole-band
model.Comment: 9 pages, 4 figure
Spin diffusion in doped semiconductors
The behavior of spin diffusion in doped semiconductors is shown to be
qualitatively different than in undoped (intrinsic) ones. Whereas a spin packet
in an intrinsic semiconductor must be a multiple-band disturbance, involving
inhomogeneous distributions of both electrons and holes, in a doped
semiconductor a single-band disturbance is possible. For n-doped nonmagnetic
semiconductors the enhancement of diffusion due to a degenerate electron sea in
the conduction band is much larger for these single-band spin packets than for
charge packets, and can exceed an order of magnitude at low temperatures even
for equilibrium dopings as small as 10^16 cm^-3. In n-doped ferromagnetic and
semimagnetic semiconductors the motion of spin packets polarized antiparallel
to the equilibrium carrier spin polarization is predicted to be an order of
magnitude faster than for parallel polarized spin packets. These results are
reversed for p-doped semiconductors.Comment: 8 pages, 4 figure
Theory of Diluted Magnetic Semiconductor Ferromagnetism
We present a theory of carrier-induced ferromagnetism in diluted magnetic
semiconductors (III_{1-x} Mn_x V) which allows for arbitrary itinerant-carrier
spin polarization and dynamic correlations. Both ingredients are essential in
identifying the system's elementary excitations and describing their
properties. We find a branch of collective modes, in addition to the spin waves
and Stoner continuum which occur in metallic ferromagnets, and predict that the
low-temperature spin stiffness is independent of the strength of the exchange
coupling between magnetic ions and itinerant carriers. We discuss the
temperature dependence of the magnetization and the heat capacity
Spin separation in digital ferromagnetic heterostructures
In a study of the ferromagnetic phase of a multilayer digital ferromagnetic
semiconductor in the mean-field and effective-mass approximations, we find the
exchange interaction to have the dominant energy scale of the problem,
effectively controlling the spatial distribution of the carrier spins in the
digital ferromagnetic heterostructures. In the ferromagnetic phase, the
majority and minority carriers tend to be in different regions of the space
(spin separation). Hence, the charge distribution of carriers also changes
noticeably from the ferromagnetic to the paramagnetic phase. An example of a
design to exploit these phenomena is given.Comment: 4 pages, 3 figures. Submitted to Phys. Rev.
- …