Quantum Confinement in High Electron Mobility Transistors

Modulation‐doped semiconductor nanostructures exhibit extraordinary electrical and optical properties that are quantum mechanical in nature. The heart of such structures lies in the heterojunction of two epitaxially grown semiconductors with different band gaps. Quantum confinement in this heterojunction is a phenomenon that leads to the quantization of the conduction and the valence band into discrete subbands. The spacing between these quantized bands is a very important parameter that has been perfected over the years into device applications. Most of these devices form low‐dimensional charge carriers that potentially allow optical transitions between the subbands in such nanostructures. The transition energy differences between the quantized bands/levels typically lie in the infrared or the terahertz region of the electromagnetic spectrum and can be designed according to the application in demand. Thus, a proper understanding and a suitable external control of such intersubband transitions (ISTs) are not only important aspects of fundamental research but also a necessity for optoelectronic device applications specifically towards closing the terahertz gap

Coherent and robust high-fidelity generation of a biexciton in a quantum dot by rapid adiabatic passage

A biexciton in a semiconductor quantum dot is a source of polarization-entangled photons with high potential for implementation in scalable systems. Several approaches for non-resonant, resonant and quasi-resonant biexciton preparation exist, but all have their own disadvantages, for instance low fidelity, timing jitter, incoherence or sensitivity to experimental parameters. We demonstrate a coherent and robust technique to generate a biexciton in an InGaAs quantum dot with a fidelity close to one. The main concept is the application of rapid adiabatic passage to the ground state-exciton-biexciton system. We reinforce our experimental results with simulations which include a microscopic coupling to phonons.Comment: Main manuscript 5 pages and 4 figures, Supplementary Information 5 pages and 3 figures, accepted as a Rapid Communication in PRB. arXiv admin note: text overlap with arXiv:1701.0130

Demonstrating the decoupling regime of the electron-phonon interaction in a quantum dot using chirped optical excitation

Excitation of a semiconductor quantum dot with a chirped laser pulse allows excitons to be created by rapid adiabatic passage. In quantum dots this process can be greatly hindered by the coupling to phonons. Here we add a high chirp rate to ultra-short laser pulses and use these pulses to excite a single quantum dot. We demonstrate that we enter a regime where the exciton-phonon coupling is effective for small pulse areas, while for higher pulse areas a decoupling of the exciton from the phonons occurs. We thus discover a reappearance of rapid adiabatic passage, in analogy to the predicted reappearance of Rabi rotations at high pulse areas. The measured results are in good agreement with theoretical calculations.Comment: Main manuscript 5 pages and 4 figures, Supplementary Information 5 pages and 3 figures, submitted to PR

Decoupling a hole spin qubit from the nuclear spins

A huge effort is underway to develop semiconductor nanostructures as low-noise hosts for qubits. The main source of dephasing of an electron spin qubit in a GaAs-based system is the nuclear spin bath. A hole spin may circumvent the nuclear spin noise. In principle, the nuclear spins can be switched off for a pure heavy-hole spin. In practice, it is unknown to what extent this ideal limit can be achieved. A major hindrance is that p-type devices are often far too noisy. We investigate here a single hole spin in an InGaAs quantum dot embedded in a new generation of low-noise p-type device. We measure the hole Zeeman energy in a transverse magnetic field with 10 neV resolution by dark-state spectroscopy as we create a large transverse nuclear spin polarization. The hole hyperfine interaction is highly anisotropic: the transverse coupling is <1% of the longitudinal coupling. For unpolarized, randomly fluctuating nuclei, the ideal heavy-hole limit is achieved down to nanoelectronvolt energies; equivalently dephasing times up to a microsecond. The combination of large and strong optical dipole makes the single hole spin in a GaAs-based device an attractive quantum platform

A chiral one-dimensional atom using a quantum dot in an open microcavity

In a chiral one-dimensional atom, a photon propagating in one direction interacts with the atom; a photon propagating in the other direction does not. Chiral quantum optics has applications in creating nanoscopic single-photon routers, circulators, phase-shifters, and two-photon gates. Here, we implement chiral quantum optics using a low-noise quantum dot in an open microcavity. We demonstrate the non-reciprocal absorption of single photons, a single-photon diode. The non-reciprocity, the ratio of the transmission in the forward-direction to the transmission in the reverse direction, is as high as 10.7 dB. This is achieved by tuning the photon-emitter coupling in situ to the optimal operating condition (β = 0.5). Proof that the non-reciprocity arises from a single quantum emitter lies in the photon statistics—ultralow-power laser light propagating in the diode’s reverse direction results in a highly bunched output (g(2)(0) = 101), showing that the single-photon component is largely removed

Photon bound state dynamics from a single artificial atom

The interaction between photons and a single two-level atom constitutes a fundamental paradigm in quantum physics. The nonlinearity provided by the atom leads to a strong dependence of the light–matter interface on the number of photons interacting with the two-level system within its emission lifetime. This nonlinearity unveils strongly correlated quasiparticles known as photon bound states, giving rise to key physical processes such as stimulated emission and soliton propagation. Although signatures consistent with the existence of photon bound states have been measured in strongly interacting Rydberg gases, their hallmark excitation-number-dependent dispersion and propagation velocity have not yet been observed. Here we report the direct observation of a photon-number-dependent time delay in the scattering off a single artificial atom—a semiconductor quantum dot coupled to an optical cavity. By scattering a weak coherent pulse off the cavity–quantum electrodynamics system and measuring the time-dependent output power and correlation functions, we show that single photons and two- and three-photon bound states incur different time delays, becoming shorter for higher photon numbers. This reduced time delay is a fingerprint of stimulated emission, where the arrival of two photons within the lifetime of an emitter causes one photon to stimulate the emission of another