63 research outputs found

    Structural and electronic properties of monodomain ultrathin PbTiO3/SrTiO3/PbTiO3/SrRuO3 heterostructures: A first principles approach

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    First-principles calculations within the local density approximation were carried out to explain the ground state and electronic properties of a vacuum/PbTiO3=SrTiO3=PbTiO3=SrRuO3 multilayer in a monodomain phase. Open-circuit boundary conditions were assumed, considering the electric displacement field, D, as the fundamental electrical variable. The direction and the magnitude of D can be monitored by proper treatment of the PbO surface layer, introducing external fractional charges Q in the surface atomic layers by means of virtual crystal approximation. Different excess or deficit surface charges (from Q ¼ +0:05 to Q ¼ +0:15) were considered, corresponding to small values of the polarization (up to +0:16C=m2) in both directions. The layer-by-layer electric polarization, tetragonality, and the profile of the electrostatic potential were computed, as well as the projected density of states, as a function of electric displacement field. The magnitude of D is preserved across the dielectric layers, which translates into a polarization of the SrTiO3 spacer layer. The tetragonality of the two PbTiO3 layers is different, in good agreement with experimental x-ray diffraction techniques, with the layer closer to the free surface exhibiting a smaller value. This is attributed to the interplay with surface effects that tend to contract the material in order to make the remaining bonds stronger. Our calculations show how the final structure in this complex oxide heterostructure comes from a delicate balance between electrical, mechanical, and chemical boundary conditions.R.M. thanks Professor Emily Hilder and Professor Nikki Stanford for their support. J.J. acknowledges financial support from the Spanish Ministry of Science, Innovation and Universities through Grant No. PGC2018-096955-B-C41

    Probing La(0.7)Sr(0.3)MnO3 multilayers via spin wave resonances

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    La(0.7)Sr(0.3)MnO3/BiFeO3 and La(0.7)Sr(0.3)MnO3/PbZr20Ti80O3 epitaxial heterostructures have been grown on SrTiO3 substrates. Spin wave resonances are used to study interface properties of the ferromagnetic La(0.7)Sr(0.3)MnO3. We find that the addition of the BiFeO3 or PbZr20Ti80O3 causes out-of-plane surface pinning of the La(0.7)Sr(0.3)MnO3. We are able to place new limits on the exchange constant D of La(0.7)Sr(0.3)MnO3 grown on these substrates and confirm the presence of uniaxial and biaxial anisotropies caused by the SrTiO3 substrate.Comment: 7 pages, 5 figures, 3 table

    GaP-ZnS Multilayer Films:Visible-Light Photoelectrodes by Interface Engineering

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    In the field of solar water splitting, searching for and modifying bulk compositions have been the conventional approaches to enhancing visible-light activity. In this work, manipulation of heterointerfaces in ZnS-GaP multilayer films is demonstrated as a successful alternative approach to achieving visible-light-active photoelectrodes. The photocurrent measured under visible light increases with the increasing number of interfaces for ZnS-GaP multilayer films with the same total thickness, indicating it to be a predominantly interface-driven effect. The activity extends to long wavelengths (650 nm), much longer than those expected for pure ZnS and also longer than those previously reported for GaP. Density functional theory calculations of ZnS-GaP multilayers predict the presence of electronic states associated with atoms at the interfaces between ZnS and GaP that are different from those found within the layers away from the interfaces; these states, formed due to unique bonding environments found at the interfaces, lead to a lowering of the band gap and hence the observed visible-light activity. The presence of these electronic states attributed to the interfaces is confirmed by depth-resolved X-ray photoelectron spectroscopy. Thus, we show that interface engineering is a promising route for overcoming common deficiencies of individual bulk materials caused by both wide band gaps and indirect band gaps and hence enhancing visible-light absorption and photoelectrochemical performance
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